Abstract: The invention relates to solution-processable, p-type, low-optical gap oligothiophene compounds for use in solar cell application, comprising at least one thiophene-containing group, at least one electron-withdrawing dicyanovinyl or tricyanovinyl group, and at least one electron-donating diphenylaminofluorenyl or N-alkylcarbazole group.

Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.

Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. A method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, epitaxially growing a silicon material on the fin structures, wherein a merged source/drain region is formed on the fin structures, and anisotropically etching at least one of the merged source drain regions to form an un-merged source/drain region.

Abstract: An oral care implement that emits a scent. In one aspect, the invention is directed to a toothbrush comprising: a base component having a gripping region and an oral engaging region, wherein said base component comprises a first scenting agent; and a second component covering at least a portion of said base component in said gripping region, to control a rate of release of said first scenting agent from said base component in said gripping region.

Abstract: The invention relates to solution-processable, p-type, low-optical gap oligothiophene compounds for use in solar cell application, comprising at least one thiophene-containing group, at least one electron-withdrawing dicyanovinyl or tricyanovinyl group, and at least one electron-donating diphenylaminofluorenyl or N-alkylcarbazole group.

Abstract: Described herein are dental floss compositions comprising an elastomeric matrix containing one or more particles, and methods of making and using the same.

Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. For example, a method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, forming disposable spacers on vertical sidewalls of the fin structures, and depositing a silicon oxide material over the fins and over the disposable spacers. The method further includes anisotropically etching at least one of the fin structures and the disposable spacers on the sidewalls of the at least one fin structure, thereby leaving a void in the silicon oxide material, and etching the silicon oxide material and the disposable spacers from at least one other of the fin structures, while leaving the at least one other fin structure un-etched. Still further, the method includes epitaxially growing a silicon material in the void and on the un-etched fin structure.

Abstract: A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval. The PECVD process includes the steps of generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas, and discontinuing generating the plasma during the second time interval immediately subsequent to the first time interval. The method further includes depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles.

Abstract: Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first and second trench. A first barrier layer is formed overlying the gate dielectric layer. A work function material layer is formed within the trenches. The work function material layer and the first barrier layer are recessed in the first and second trench. The work function material layer and the first barrier layer form a chamfered surface. The gate dielectric layer is recessed in the first and second trench. A conductive gate electrode material is deposited such that it fills the first and second trench. The conductive gate electrode material is recessed in the first and second trench.

Abstract: For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.

Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.

Abstract: For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.

Abstract: A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval. The PECVD process includes the steps of generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas, and discontinuing generating the plasma during the second time interval immediately subsequent to the first time interval. The method further includes depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles.

Abstract: In a system for protecting a user from injury sustained during sleep, a sensing device is operated to automatically monitor orientation or posture of a user during sleep of the user. A signal is transmitted from the sensing device to a control unit, which is operated to activate an appliance so that the appliance generates an alert signal upon detection by the sensing device and control unit of an undesirable orientation or posture of the user.

Abstract: Two different approaches for reducing the bit depth of the image data so as to reduce the computation and hardware requirement of image patch matching, with minimal loss of matching accuracy are described. Patch matching is able to be implemented in many different ways, but generally involves matching one area of an image with another area of the same image or another area of a different image (e.g. another video frame) through the use of a matching cost function. Transforming the image data to lower bit depth, image processing techniques are able to be implemented to minimize the needed memory and other resources for patch-matching. The complexity/performance trade-off of the approaches are also adjustable so that they are able to be applied for applications with different quality requirements and hardware constraints.

Abstract: An exhaust diffuser and method for manufacturing an exhaust diffuser is provided. An exhaust diffuser for a torque-generating turbine, in particular a torque-generating gas turbine is provided herein. The exhaust diffuser having an inner member, the inner member having an outer surface and an outer member having an inner surface, the inner member and the outer member forming an annular channel, at least a first supporting strut connecting the inner member and the outer member, the first supporting strut extending essentially radially from the inner surface to the outer surface, the first supporting strut having a middle section having a first airfoil and an outer section having a second airfoil, and the second airfoil differing from the first airfoil in shape to be able to handle a higher range of angle of attack. Furthermore, it is described a method for manufacturing an exhaust diffuser.

Abstract: An exhaust diffuser and method for manufacturing an exhaust diffuser is provided. An exhaust diffuser for a torque-generating turbine, in particular a torque-generating gas turbine is provided, the exhaust diffuser having an inner member, and the inner member having an outer surface. The outer member having an inner surface, and the inner member and the outer member forming an annular channel at least a first supporting strut connecting the inner member and the outer member, the supporting strut extending essentially radially from the inner surface to the outer surface, the supporting strut having a middle section, the middle section having a first airfoil and an outer section having a second airfoil, and the second airfoil having a higher angle of incidence than the first airfoil. Furthermore, it is described a method for manufacturing an exhaust diffuser.

Abstract: Toothbrushes comprising components with light transmitting and structural characteristics provide enhanced visual and other sensory effects. The components in combination are generally chemically compatible and function to provide areas of varying visibility of features. At least one of the components may include a scenting agent.

Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. For example, a method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, forming disposable spacers on vertical sidewalls of the fin structures, and depositing a silicon oxide material over the fins and over the disposable spacers. The method further includes anisotropically etching at least one of the fin structures and the disposable spacers on the sidewalls of the at least one fin structure, thereby leaving a void in the silicon oxide material, and etching the silicon oxide material and the disposable spacers from at least one other of the fin structures, while leaving the at least one other fin structure un-etched. Still further, the method includes epitaxially growing a silicon material in the void and on the un-etched fin structure.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a fin over a semiconductor substrate. The method further includes selectively epitaxially growing a silicon-containing material on the fin and providing the fin with a diamond-shaped cross-section and with an upper portion and a lower portion. The lower portion of the fin is covered with a masking layer. Further, a salicide layer is formed on the upper portion of the fin, and the masking layer prevents formation of the salicide layer on the lower portion of the fin.