Abstract: A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first secon

Abstract: A wafer processing tape includes a release film having a large length; an adhesive layer formed on a first surface of the release film and having a predetermined planar shape; a pressure-sensitive adhesive film having a label portion and a surrounding portion surrounding outside the label portion; and a support member formed on a second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are formed. The label portion has a predetermined planar shape and covers the adhesive layer so that the label portion contacts with the release film around the adhesive layer. The support member is disposed at both end portions of the release film in a short side direction of the release film. The support member has a coefficient of linear expansion of 300 ppm/° C. or less.

Abstract: A wafer processing tape includes a release film having a large length; an adhesive layer formed on a first surface of the release film and having a predetermined planar shape; a pressure-sensitive adhesive film having a label portion and a surrounding portion surrounding outside the label portion; and a support member formed on a second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are formed. The label portion has a predetermined planar shape and covers the adhesive layer so that the label portion contacts with the release film around the adhesive layer. The support member is disposed at both end portions of the release film in a short side direction of the release film. The support member has a coefficient of linear expansion of 300 ppm/° C. or less.

Abstract: A wafer-adhering adhesive tape, which has, on a surface of a base, a radiation-curable removable adhesive layer, and if necessary a die-bonding adhesive layer in order, wherein the radiation-curable removable adhesive layer is mainly composed of an acrylic-series copolymer having, in a principal chain, at least a radiation-curable carbon-carbon double bond containing group, a hydroxyl group, and a group containing a carboxyl group, respectively, and the radiation-curable removable adhesive layer has a gel fraction of 60% or greater.

Abstract: A wafer-processing tape, which has an adhesive layer and a removable adhesive layer formed on a surface of a base film, and which has an area where B>A, and an area where A>B, in which a peeling force between the base film and the adhesive layer is designated as A, and peeling forces between a target to be bonded and the adhesive layer and between a target to be bonded and the removable adhesive layer are designated as B, wherein the adhesive layer is transferred onto the chip side during pickup in the area where B>A, and the removable adhesive layer is not transferred onto the target to be bonded in the area where A>B during peeling off the tape.

Abstract: A wafer processing tape includes a release film having a large length; an adhesive layer formed on a first surface of the release film and having a predetermined planar shape; a pressure-sensitive adhesive film having a label portion and a surrounding portion surrounding outside the label portion; and a support member formed on a second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are formed. The label portion has a predetermined planar shape and covers the adhesive layer so that the label portion contacts with the release film around the adhesive layer. The support member is disposed at both end portions of the release film in a short side direction of the release film. The support member has a coefficient of linear expansion of 300 ppm/° C. or less.

Abstract: A wafer-processing tape, having a removable adhesive layer (2), and an adhesive layer (3), formed on a substrate film (1), wherein the tape is used in a process involving the steps of: grinding a back face of a wafer circuit substrate (5) having convex-type metal electrodes (4), and dicing the wafer circuit substrate into chips, in a state that the tape is adhered to the wafer circuit substrate; and picking up the chips, in which the chips are picked up in a state that the adhesive layer (3) is peeled from the substrate film (1) but is bonded to the individual chip.

Abstract: Problem to be Solved by the Invention: To provide a adhesive tape for electronic component fabrication, having extremely high antistatic performance, superior adherence between an antistatic layer and a adhesive layer, does not cause corrosion of a magnetic head that is comprised of a metal such as pure copper or the like, and alumina to occur, and which is easier to be released again.

Abstract: A wafer processing tape includes a release film having a large length; an adhesive layer formed on a first surface of the release film and having a predetermined planar shape; a pressure-sensitive adhesive film having a label portion and a surrounding portion surrounding outside the label portion; and a support member formed on a second surface of the release film opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are formed. The label portion has a predetermined planar shape and covers the adhesive layer so that the label portion contacts with the release film around the adhesive layer. The support member is disposed at both end portions of the release film in a short side direction of the release film. The support member has a coefficient of linear expansion of 300 ppm/° C. or less.

Abstract: The present invention provides a dicing/die bonding sheet which can be used as a dicing tape during dicing, enables ready separation of the semiconductor element and the adhesive layer from the pressure-sensitive adhesive layer during pickup, and in which the adhesive layer has satisfactory adhesiveness as a die bonding material. A dicing/die bonding sheet in which the pressure-sensitive adhesive layer comprises a compound (A), containing intramolecular, radiation curable carbon-carbon double bonds with an iodine value of 0.5 to 20, and at least one compound (B) selected from a group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins, and the adhesive layer comprises an epoxy resin (a), a phenolic resin (b) with a hydroxyl equivalent of at least 150 g/eq., an epoxy group-containing acrylic copolymer (c), comprising from 0.

Abstract: A wafer-adhering adhesive tape, which has, on a surface of a base, a radiation-curable removable adhesive layer, and if necessary a die-bonding adhesive layer in order, wherein the radiation-curable removable adhesive layer is mainly composed of an acrylic-series copolymer having, in a principal chain, at least a radiation-curable carbon-carbon double bond containing group, a hydroxyl group, and a group containing a carboxyl group, respectively, and the radiation-curable removable adhesive layer has a gel fraction of 60% or greater.

Abstract: A method of manufacturing a thin-film circuit substrate, containing: (a) gouging a surface of a circuit substrate in a depth at least approximately equal to a thickness of a final product of the substrate, to form a section to be formed a penetrating section; (b) providing a protecting adhesive tape to adhere to the gouged surface of the substrate, before a backing surface of the substrate is ground; (c) grinding the backing surface in such a thickness that the gouged section would not penetrate; (d) dry etching entirely the backing surface, while the tape adheres to the substrate, after completion of the grinding for the backing surface; and (e) making the gouged section of the substrate to penetrate, by the dry etching, thereby forming the penetrating structure section; and, a protecting adhesive tape usable in the method.

Abstract: A wafer-processing tape, having a removable adhesive layer(2), and an adhesive layer (3), formed on a substrate film(1), wherein the tape is used in a process involving the steps of: grinding a back face of a wafer circuit substrate (5) having convex-type metal electrodes (4), and dicing the wafer circuit substrate into chips, in a state that the tape is adhered to the wafer circuit substrate; and picking up the chips, in which the chips are picked up in a state that the adhesive layer (3) is peeled from the substrate film (1) but is bonded to the individual chip.

Abstract: A wafer-processing tape (10), having an intermediate resin layer (2), a removable adhesive layer (3), and, if necessary, an adhesive layer (4), which are laminated in this order on a substrate film (1), wherein a storage elastic modulus at 80° C. of the intermediate resin layer is larger than a storage elastic modulus at 80° C. of the removable adhesive layer.

Abstract: A wafer-processing tape, which has an adhesive layer (1) and a removable adhesive layer (2) formed on a surface of a base film (3), and which has an area where B>A, and an area where A>B, in which a peeling force between the base film (3) and the adhesive layer (1) is designated as A, and peeling forces between a target to be bonded (4) and the adhesive layer (1) and between a target to be bonded (5) and the removable adhesive layer (2) are designated as B, wherein the adhesive layer (1) is transferred onto the chip side during pickup in the area where B>A, and the removable adhesive layer (2) is not transferred onto the target to be bonded (5) in the area where A>B during peeling off the tape.

Abstract: A method of manufacturing a thin-film circuit substrate, containing: (a) gouging a surface of a circuit substrate in a depth at least approximately equal to a thickness of a final product of the substrate, to form a section to be formed a penetrating section; (b) providing a protecting adhesive tape to adhere to the gouged surface of the substrate, before a backing surface of the substrate is ground; (c) grinding the backing surface in such a thickness that the gouged section would not penetrate; (d) dry etching entirely the backing surface, while the tape adheres to the substrate, after completion of the grinding for the backing surface; and (e) making the gouged section of the substrate to penetrate, by the dry etching, thereby forming the penetrating structure section; and, a protecting adhesive tape usable in the method.

Abstract: A wafer-adhering adhesive tape, which has, on a surface of a base, a radiation-curable removable adhesive layer, and if necessary a die-bonding adhesive layer in order, wherein the radiation-curable removable adhesive layer is mainly composed of an acrylic-series copolymer having, in a principal chain, at least a radiation-curable carbon-carbon double bond containing group, a hydroxyl group, and a group containing a carboxyl group, respectively, and the radiation-curable removable adhesive layer has a gel fraction of 60% or greater.

Abstract: There is disclosed a semiconductor wafer-securing adhesive tape having a radiation-curable adhesive layer on one surface of a support film, wherein the support film is composed of a laminated film that comprises, as a center layer, a film comprising a styrene/ethylene/butene/styrene block copolymer, a ethylene/acrylic acid-type copolymer, and a polyamide/polyether copolymer in a specific ratio, and has a layer for adhesive coating laid, directly or through a bonding layer, on one surface of the center layer on the side where said radiation-curable adhesive layer is provided, and has a transfer-preventing layer laid, directly or through a bonding layer, on the other surface of the center layer. There is also disclosed a semiconductor wafer-securing adhesive tape wherein the center layer of said semiconductor wafer-securing adhesive tape has a film comprising said SEBS block copolymer or SEPS block copolymer, an amorphous poly .alpha.-olefin, and a polyamide/polyether copolymer, in a specific ratio.