Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: There is provided a communication terminal including a transmission controller configured to allow transmission of, to a verification target device, authentication information for authenticating the verification target device based on first information acquired from an information processing device, and a verification unit configured to verify validity of the verification target device based on a response to the authentication information and second information acquired from the information processing device, the second information being associated with the first information.

Abstract: A data communication apparatus which is capable of preventing reception of undesired data by a destination without increasing the load on a network, etc. Data and a destination thereof are input. A sender ID related to a sender who sends the input data is input. The input data is sent to the input destination. A sender ID for data transmission to the input destination is permitted is stored as a permission ID. The input sender ID is collated with the stored permission ID. Whether to permit data transmission is determined according to the collation result.

Abstract: Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.

Abstract: A sheet conveyor included in an image forming apparatus includes a conveying roller rotatable in normal and reverse directions to convey a sheet in opposite sheet conveyance directions, a switching guide rotatable about a support shaft to guide the sheet to a path, a first switchback mechanism performing a first operation of changing a direction of rotation of the conveying roller, a first actuator actuating the first switchback mechanism, a second switchback mechanism performing a second operation of changing a position of the switching guide, a second actuator actuating the second switchback mechanism. The switchback mechanisms and the actuators are configured to be replaceable with a switchback linking mechanism, by employing a linking member, configured to link the first and second operations to be actuated by one actuator of the first and second actuators without changing an arrangement of the one actuator of the first and second actuators.

Abstract: An acoustic structure, including a pipe having a plurality of cavities that are partitioned by a partition, each of the plurality of cavities extending in a first direction that is a longitudinal direction of the pipe, wherein the pipe has at least one opening which permits the plurality of cavities to communicate with an exterior of the pipe, a position of each of the at least one opening in the first direction being a first position.

Abstract: A sliding bearing structure for a shaft member includes: a shaft member; a bearing member rotates relative to the shaft member; an oil supply space to which lubrication is supplied between sliding surfaces of the shaft member and the bearing member; two annular grooves formed in a circumferential direction in an inner peripheral surface of the bearing member; and two annular seal members formed as separate pieces from the shaft member and the bearing member, and arranged in the annular grooves between the shaft member and the bearing member. Each annular seal member is formed in plural, and is made of material having a thermal expansion coefficient such that an inside diameter of the annular seal member is smaller than an inside diameter of the bearing member at a low temperature, and is the same as or larger than the inside diameter of the bearing member at a high temperature.

Abstract: According to an illustrative embodiment an information processing device is provided. The device includes a processor for controlling acquisition of first information which indicates a service not registered in an integrated circuit of the device and a service registered in the integrated circuit of the device, the first information being acquired from within the device, controlling acquisition of second information which indicates a service registered in the integrated circuit of the device, and controlling display based on the first information and second information.

Abstract: A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

Abstract: An ink composition for ink jet recording includes a coating film forming material, a polyether-modified silicone oil, and water, wherein the polyether-modified silicone oil is soluble in a solvent in which a lower limit of an SP value is 8.5 or less and an upper limit of the SP value is 18.0 or more.

Abstract: A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

Abstract: It is an object of the present invention to provide an ink set which makes it possible to obtain recorded images that have a broad color reproduction range and a high saturation, as well as glossiness without conspicuous graininess caused by dot expression, and which in particular makes it possible to achieve an extreme suppression of graininess caused by dot expression in cases where the ink set is used on media that have a coating layer, and to obtain recorded images with extremely superior coloring characteristics in cases where the ink set is used on ordinary paper. The present invention provides an ink set comprising at least a yellow ink (Y), magenta ink (M), cyan ink (C) and red ink (R), wherein the L* values in the CIE-stipulated Lab display system of aqueous solutions of the respective inks diluted 1000 times by weight are in the following ranges: (Y): at least 89 but no more than 94, (M): at least 76 but no more than 93, (C): at least 74 and no more than 87, (R): at least 55 and no more than 74.

Abstract: Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.

Abstract: The ink jet recording method includes discharging liquid droplets of a photocurable ink composition including a solvent, a polymerizable compound, and a photopolymerization initiator from a head to a recording medium to land the liquid droplets, thereby forming an image; evaporating the solvent included in the photocurable ink composition constituting the image; and irradiating the image after the second step with light, wherein when the irradiation is initiated in the third step, the content of the polymerizable compound included in the photocurable ink composition constituting the image after the second step is from 20 to 90% by mass, based on the total mass of the ink composition.

Abstract: An IC chip, an information processing apparatus, system, method, and program are provided. An IC chip includes an authentication control unit configured to authenticate a request using authentication information. The request and/or the authentication information is received from outside the IC chip.

Abstract: An IC chip, an information processing apparatus, system, method, and program are provided. An IC chip includes an authentication control unit configured to authenticate a request using authentication information. The request and/or the authentication information is received from outside the IC chip.

Abstract: [Problem] The object of the present invention is to provide an oral composition, which can remove tooth stain effectively. The object of the present invention is also to provide an oral composition, which scarcely damages teeth and gums and can be easily applied. [Method of solution] An oral composition for removing tooth stain, which comprises 3.5 to 30% by weight of peroxide and 5 to 20% by weight of phosphate polymer (in particular, ultraphosphate having an average chain length of phosphoric acid polymerization of 10 to 30).

Abstract: A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.

Abstract: A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.

Abstract: A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.