Abstract: There is provided a communication terminal including a transmission controller configured to allow transmission of, to a verification target device, authentication information for authenticating the verification target device based on first information acquired from an information processing device, and a verification unit configured to verify validity of the verification target device based on a response to the authentication information and second information acquired from the information processing device, the second information being associated with the first information.

Abstract: Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. Treatment gas supplied from a gas supply source is heated by a heater, and supplied into the chamber. A flow amount control valve is provided to increase a flow amount of the treatment gas supplied into the chamber. Contaminants discharged from a film of the semiconductor wafer during heat treatment are discharged to the outside of the chamber with a gas flow formed by a large amount of high-temperature treatment gas supplied into the chamber to reduce contamination inside the chamber.

Abstract: There is provided a communication terminal including a transmission controller configured to allow transmission of, to a verification target device, authentication information for authenticating the verification target device based on first information acquired from an information processing device, and a verification unit configured to verify validity of the verification target device based on a response to the authentication information and second information acquired from the information processing device, the second information being associated with the first information.

Abstract: The present invention is to provide a method of manufacturing a three-dimensional structure capable of manufacturing a three-dimensional structure having excellent mechanical strength with high productivity, a three-dimensional structure manufacturing apparatus capable of manufacturing a three-dimensional structure having excellent mechanical strength with high productivity, and a three-dimensional structure manufactured using the method of manufacturing a three-dimensional structure. The method includes a layer formation step of forming a layer using a composition including particles and an aqueous solvent; and a binding liquid application step of applying a binding liquid to the layer to bind the particles, in which a temporary formed body obtained by repeating a series of steps including the layer formation step and the binding liquid application step, and the method further includes a temporary formed body heating step of performing a heating treatment on the temporary formed body.

Abstract: There are provided a method of manufacturing a three-dimensional structure, and three-dimension formation composition, by each which a three-dimensional structure can be manufactured with high dimensional accuracy, and provided a three-dimensional structure manufactured with high dimensional accuracy. There is provided a method of manufacturing a three-dimensional structure, in which the three-dimensional structure is manufactured by laminating a layer, the method including: forming the layer using a three-dimension formation composition containing particles, a binding resin, and a water-based solvent; removing the water-based solvent from the layer by heating the layer; and applying a binding solution containing a binder to the layer, in which the binding resin has an ammonium salt of a carboxyl group as a functional group.

Abstract: Provided is a three-dimensional shaped article with relatively high strength and relatively high accuracy. A sintering and shaping method includes: a shaping layer forming process of forming a shaping layer (5) by using a sintering and shaping material in which inorganic particles (2a) are included; a process of applying a liquid binding agent (8), in which inorganic particles (8a) are included, to a desired region of the shaping layer (5); a process of curing the liquid binding agent (8), which is applied, to form a shaping cross-sectional layer (shaping portion (5a)); a process of removing a region (non-shaping portion (5b)) of the shaping layer (5) to which the liquid binding agent (8) is not applied; and a process of heating the shaping cross-sectional layer that is laminated for a sintering treatment.

Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Abstract: A method of producing a Pb-free copper-alloy sliding material containing 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, 0.5 to 30.0% of Zn, and 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN may be added.

Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Abstract: An IC chip, an information processing apparatus, system, method, and program are provided. An IC chip includes an authentication control unit configured to authenticate a request using authentication information. The request and/or the authentication information is received from outside the IC chip.

Abstract: An ink composition for ink jet recording includes a coating film forming material, a polyether-modified silicone oil, and water, wherein the polyether-modified silicone oil is soluble in a solvent in which a lower limit of an SP value is 8.5 or less and an upper limit of the SP value is 18.0 or more.

Abstract: A method for producing a three-dimensionally shaped object by stacking layers includes forming each layer using a three-dimensional shape composition containing particles, measuring the thickness of the layer, and ejecting onto the layer a liquid binder containing a binding agent capable of binding the particles. For the ejecting, the amount of the liquid binder to be ejected per unit area of the layer when viewed from above is adjusted according to the result of the measuring.

Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Abstract: A substrate having a native oxide film formed on its surface is heated in a hydrogen atmosphere to reduce silicon dioxide to hydrogen. Additionally, silicon near an interface between the native oxide film and the substrate is hydrogen-terminated. A hydrogen-introduced layer containing silicon bonded with hydrogen is accordingly formed on the substrate surface. A dopant solution is supplied to the substrate surface having the hydrogen-introduced layer formed thereon, and hydrogen in the hydrogen-introduced layer is replaced with a dopant, thereby introducing the dopant into the substrate surface. A relatively large thickness of the hydrogen-introduced layer formed through the reduction of the native oxide film allows the dopant to be uniformly introduced into the substrate surface for a required depth. A flashing light is emitted to the substrate surface containing the introduced dopant, activating the dopant.

Abstract: A three-dimensional shaping composition of this invention is a three-dimensional shaping composition which is used for producing a three-dimensionally shaped article by laminating layers and contains particles having a hydrophilic surface and water-soluble monomers having a hydroxyl group. The water-soluble monomer is preferably at least one selected from the group consisting of 4-hydroxybutyl acrylate, 2-hydroxybutyl acrylate, 2-hydroxypropyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, and phenol epoxy acrylate.

Abstract: An IC chip, an information processing apparatus, system, method, and program are provided. An IC chip includes an authentication control unit configured to authenticate a request using authentication information. The request and/or the authentication information is received from outside the IC chip.

Abstract: Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.