Abstract: Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.

Abstract: A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.

Abstract: An exhaust purification apparatus for an engine has a first casing (17) that is interposed in an exhaust path (13); a second casing (23) that is set downstream of the first casing (17) and contains an exhaust purification device (24); a connecting pipe (22, 41, 51) that connects the first casing and the second casing (23) to each other and includes an insertion portion that is inserted in the first casing (17); and an injection nozzle (27, 52) that has a tip end inserted in the connecting pipe (22, 41, 51) and injects an auxiliary agent from the tip end. The insertion portion of the connecting pipe (22, 41, 51) is provided with a plurality of through-holes (22a, 41a, 41b, 51a) connecting the inside and the outside of the connecting pipe (22, 41, 51), so that the exhaust gas contained in the first casing (17) is introduced into the connecting pipe (22, 41, 51) through the through-holes and guided towards the second casing (23).

Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Abstract: A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

Abstract: Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.

Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

Abstract: A receiving circuit which receives serial data, includes: a voltage controlled oscillator which generates a sampling clock signal having a frequency based on an input control voltage; a first frequency divider which divides the frequency of the sampling clock signal at a division rate M; a second frequency divider which divides a frequency of a clock signal based on the received serial data at a division rate N, N being a real number represented by M×q/p; a frequency comparator which generates a phase/frequency difference signal based on a phase difference between an output signal of the first frequency divider and an output signal of the second frequency divider; and a control voltage generating circuit which generates the control voltage to control a frequency of the voltage controlled oscillator based on the phase/frequency difference signal.

Abstract: An information processing device includes a digital-information generating unit, an identifier assigning unit, an attribute setting unit and an electronic signing unit. The digital-information generating unit serially generates pieces of first digital information. The identifier assigning unit assigns different identifiers to the respective pieces of first digital information generated by the digital-information generating unit. The attribute setting unit sets an attribute of each first digital information so as to include the identifier assigned to each first digital information. The electronic signing unit electronically signs each first digital information to which the attribute setting unit sets the attribute including the corresponding identifier.

Abstract: An exhaust purification apparatus comprises an ammonia selective reduction-type NOx catalyst that selectively reduces NOx within exhaust gas by using ammonia as a reducing agent, a urea-water supply device that supplies urea-water into the exhaust gas existing upstream of the ammonia selective reduction-type NOx catalyst, and a control unit. The control unit controls the urea-water supply device so that the urea-water is intermittently supplied according to predetermined supply duration time and predetermined supply suspension time when the urea-water is supplied from the urea-water supply device for the purpose of providing ammonia to the ammonia selective reduction-type NOx catalyst.

Abstract: An agitating device for agitating the exhaust gas of an engine includes a base plate having a plurality of through holes that are defined by radially extending spoke portions and a ring-like rim portion and are arranged in a circular pattern in a circumferential direction of the base plate, and a plurality of fins expanding from the respective spokes on a slant with respect to the base plate. The base plate is fixed in the exhaust passage by the rim portion being jointed to the exhaust passage at welded portions. The welded portions are each disposed in an area between respective two adjacent spoke portions in the circumferential direction of the base plate, and an outer edge of the rim portion positioned on the outer side of the rim portion in extending directions of the spoke portions is located next to the exhaust passage with a gap provided therebetween.

Abstract: A self emission silicon emission display is provided at a low price, which contains silicon and oxygen which exist in abundance on the earth as the main component and which can be easily formed by conventional silicon process. A light emission element includes a first electrode for injecting electrons, a second electrode for injecting holes, and a light emission part electrically connected to the first electrode and the second electrode, where the light emission part includes amorphous or polycrystalline silicon consisting of a single layer or plural layers and where the dimension of the silicon in at least one direction is controlled to be several nanometers.

Abstract: An information processing system includes a receiving unit that receives a request for assigning computer resources for processing data and identification information that identifies data processing to be performed on the data, an assigning unit that assigns at least part of computer resources included in one of one or plural computers in response to the request, a specifying unit that specifies storage location information showing a storage location of the data in the assigned computer resources on the basis of the computer resources, a transfer unit that transfers the data to be processed to the storage location, and a deploying unit that deploys one or plural programs constituting the data processing to the assigned computer resources so that the one or plural programs are executed using the assigned computer resources.

Abstract: A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.

Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Abstract: An exhaust purification device for an engine comprises a catalytic device for purifying exhaust by using an additive, a deflecting device for allowing the exhaust to flow through and causing the exhaust to be agitated, upstream of the catalytic device, an additive injection device for injecting an additive, downstream of the deflecting device, a temperature detection device for detecting exhaust temperature, downstream of the deflecting device, and a control unit for controlling the additive injection device on the basis of the exhaust temperature detected by the temperature detection device. The temperature detection device has a temperature detection part located within a region where the exhaust having passed through the deflecting device has increased velocity.

Abstract: A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.

Abstract: Disclosed is an exhaust purification device for an internal combustion engine provided with a venturi-shaped mixing chamber (13) upstream of a NOx catalyst (16), said mixing chamber (13) formed continuously from a tapering part (13a) along which the radius decreases in the downstream direction, a waist part (13b) at which the radius is at smallest, and a widening part (13c) along which the radius increases in the downstream direction. A vane plate (18) and an aqueous urea solution spray nozzle (19) are arranged inside the tapering part (13a). The ratio (a/b) of the distance (a) between the vane plate (18) and the center of the waist part (13b) and the distance (b) between the center of the waist part (13b) and the mouth of the NOx catalyst (16) is set between 0.5 and 1.0.

Abstract: The present invention provides a personal information management system, a personal information management program and a personal information protecting method capable of storing personal information in consideration of security protection and facilitating utilization of the stored information. A personal information management system for handling personal information has a function of connection to a personal information dispersion management server that provides functions of encrypting personal information by the secret sharing scheme and decrypting the encrypted personal information with an index key for decrypting. The system has a search keyword management database storing the index key for decrypting and a personal information managing apparatus.

Abstract: Capacity-gate voltage characteristics of a field-effect transistor having plural gates are measured against a voltage change in each one of the gates for an inverted MOSFET and for an accumulated MOSFET, respectively. These measurements together with numerical simulations provided from a model for quantum effects are used to determine flat band voltages between the plural gates and a channel. Next, an effective normal electric field is calculated as a vector line integral by using a set of flat band voltages for the measured capacity as a lower integration limit. Lastly, mobility depending on the effective normal electric field is calculated from current-gate voltage characteristic measurements and capacity measurements in a source-drain path, and the calculated mobility is substituted into an equation for a current-voltage curve between source and drain.