Abstract: Since positional displacement occurs in a case of using a printing method, an electrode substrate in which a lower electrode and an upper electrode are accurately positioned by way of an insulator could not be formed. Use of a photomask for positional alignment increases the cost outstandingly. According to the present invention, since the lower electrode is utilized as a photomask for positionally alignment with the upper electrode, positional displacement does not occur even by the use of the printing method. Accordingly, a semiconductor device such as a flexible substrate using the organic semiconductor can be formed at a reduced cost by using a printing method.

Abstract: The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm?2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm?2 or more.

Abstract: The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

Abstract: An image forming apparatus has a micropattern reading unit, an encoded image generating unit and a code printing control unit. The micropattern reading unit reads a micropattern of a sheet. The encoded image generating unit generates an encoded image. The encoded image has the micropattern and a private key of a user. The code printing control unit prints the encoded image on the sheet to produce a certificate sheet.

Abstract: A server for authenticating a user has a receiving unit, an identification mail transmitting unit and an authentication control section. The receiving unit receives an authentication request from the user. The identification mail transmitting unit transmits an identification mail to the user. The identification mail identifies whether or not the user is a legitimate user. The authentication control section determines that the authentication request is unsuccessful regardless of whether or not a digital signature on the authentication request is valid, when the identification mail identifies that the user is not the legitimate user.

Abstract: An exhaust gas purifying system reliably detects an amount of accumulated particulates, lengthens forced regeneration intervals, and improves fuel efficiency. The exhaust gas purifying system comprises: a particulate filter 22 disposed in an exhaust system of an internal combustion engine 2 and collecting particulates from exhaust gas, and an NO2 generating unit 21 upstream of or in the particulate filter 22; a discharged particulate amount calculating unit A1 calculates an amount Me of discharged particulates on the basis of an excess air ratio ?; a burnt particulate amount calculating unit A2 calculates an amount Mb of burnt particulates on the basis of the temperature of exhaust gas in front of the particulate filter or the temperature of the particulate filter; and a particulate accumulation amount calculating unit calculates an amount Ma of accumulated particulates on the basis of the amount Me of discharged particulates or the amount Mb of burnt particulates.

Abstract: In a miniaturized field effect transistor, the roughness of the interface between a gate dielectric film and a gate electrode is controlled on an atomic scale. The thickness variation of the gate dielectric film is lowered, whereby a field effect transistor with high mobility is manufactured. An increase in the mobility in the field effect transistor can be achieved not only in the case of using a conventional SiO2 thermal oxide film as the gate dielectric film but also in the case of using a high dielectric material for the gate dielectric film.

Abstract: The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

Abstract: In a field effect semiconductor device for high frequency power amplification, it is difficult to achieve size reduction and increased efficiency simultaneously while ensuring voltage withstanding. A further improvement in efficiency is attained by using a strained Si channel for LDMOS at an output stage for high frequency power amplification. Further, the efficiency is improved as much as possible while decreasing a leak current, by optimizing the film thickness of the strained Si layer having a channel region, inactivation of defects and a field plate structure.

Abstract: An objective lens for endoscopes comprises a front lens unit component and a rear lens unit component, between which a stop is located, wherein a front lens unit component comprises, in order from the object side, a first lens having a negative refractive power and a second lens having a positive refractive power which directs a surface of the small radius of curvature toward the object side; wherein a rear lens unit component comprises a third lens having a positive refractive power which directs a surface of the small radius of curvature toward the image side, a fourth lens having a positive refractive power and a fifth lens having a negative refractive power; and wherein the fourth lens and the fifth lens are cemented, and satisfying the following condition: 2.0<|f3/f|<3.0 where f is the composite focal length of the total system and f3 is the focal length of the third lens.

Abstract: In a packing container for an electronic instrument, a pair of tubular shaped bottom cushioning portions is formed by bending a pair of inner bottom flaps several times, and a pair of tubular shaped top cushioning portions is formed by bending a pair of inner top flaps several times. Each of the cushioning portions has a reentrant formed by bending side walls thereof inward to the tubular shape, to which a part of electronic instrument is fitted. The bottom cushioning portions and the top cushioning portions are surface contacted with each other for reinforcing the strength of the container in height direction. Each cushioning portion further has a reinforcing board tightly contacting with the side board for reinforcing the side board.

Abstract: An engine control system comprises a NOx catalyst selectively reducing NOx from exhaust gases, a reducing agent supply providing the reducing agent to an exhaust system and positioned upstream of the NOx catalyst, NOx sensors detecting an amount of NOx in exhaust gases emitted by an internal combustion engine, a fuel injection system injecting fuel to the internal combustion engine in a main injection mode or a pilot-and-main injection mode, and a control unit activating the fuel injection system in the pilot-and-main injection mode when a NOx purifying efficiency determined on the basis of data of emitted NOx is equal to or below a preset purifying efficiency.

Abstract: An objective lens for endoscopes comprises a front lens unit component and a rear lens unit component, between which a stop is located, wherein a front lens unit component comprises, in order from the object side, a first lens having a negative refractive power and a second lens having a positive refractive power which directs a surface of the small radius of curvature toward the object side; wherein a rear lens unit component comprises a third lens having a positive refractive power which directs a surface of the small radius of curvature toward the image side, a fourth lens having a positive refractive power and a fifth lens having a negative refractive power; and wherein the fourth lens and the fifth lens are cemented, and satisfying the following condition:

Abstract: Disclosed are a semiconductor device which hardly experiences a reduction in mobility caused by scattering by the fixed charge existent in a gate insulating film while the EOT of a fine CMOS comprising the high-dielectric gate insulating film is reduced and which enables high integration, and a production process therefor. CMOS having no junction is formed on an SOI substrate and a high-dielectric gate insulating film is used as the gate insulating film of the CMOS. The feature of the CMOS device of the present invention is that the CMOS device is operated in an accumulation mode. Since a channel is formed several nm away from the surface of the substrate as compared with an ordinary device which operates in an inversion mode, a reduction in mobility caused by the fixed charge existent in the gate insulating film can be reduced.

Abstract: The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N20 atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

Abstract: A NOx catalyst for selectively reducing NOx in exhaust gas by adsorbing ammonia is provided at an exhaust system of an engine, ammonia or urea water is supplied to the NOx catalyst by reducing agent supplying means, a consumption amount of ammonia adsorbed to the NOx catalyst is derived by consumption amount deriving means based on an exhaust amount of NOx exhausted from the engine detected or estimated by NOx exhaust amount deriving means and an actual NOx cleaning rate by the NOx catalyst derived by actual NOx cleaning rate deriving means, an actual adsorption amount of ammonia adsorbed to the NOx catalyst is derived in accordance with an addition amount of ammonia and the consumption amount of ammonia by adsorption amount deriving means and the reducing agent supplying means is controlled by controlling means in accordance with the actual adsorption amount.

Abstract: An exhaust emission control system of an internal combustion engine capable of post injection is disclosed which provides control such that the injection timing in sub injection is set to a point earlier than the target injection timing when the sub injection is started, and the injection timing in the sub injection is then delayed to the target injection timing. This realizes the post injection under the optimum conditions and enables an efficient rise in the exhaust temperature while inhibiting deterioration of the drivability due to a rapid change in torque.

Abstract: An engine generator having an engine unit and generator are accommodated in a noise insulation case with a crankshaft oriented in a widthwise direction of the noise insulation case. An air cleaner is disposed at the front end of the noise insulation case and a muffler is disposed at the rear end of the noise insulation case with an engine between. When the engine generator is used as a generator, a generator and a recoil starter are connected with one end of the crankshaft. When the engine generator is used as a utility engine, the recoil starter is connected with one end of the crankshaft and a driven member is connected with the other end of the crankshaft.

Abstract: An exhaust emission control system of an internal combustion engine is provided which controls the oxygen concentration of exhaust passing through the exhaust emission control device according to the flow rate of exhaust flowing through an exhaust passage when the exhaust emission control device is regenerated, so that the regeneration is completed within a short period of time while the filter is prevented from being damaged by melting during the regeneration. This improves the exhaust emission control performance and reliability of the filter.

Abstract: An NOx catalyst 17 for selectively reducing NOx in exhaust gas by adsorbing ammonia is provided at an exhaust system of an engine 1, ammonia or urea water is supplied to the NOx catalyst by reducing agent supplying means 29, a consumption amount of ammonia adsorbed to the NOx catalyst is derived by consumption amount deriving means 43 based on an exhaust amount of NOx exhausted from the engine detected or estimated by NOx exhaust amount deriving means 41 and an actual NOx cleaning rate by the NOx catalyst derived by actual NOx cleaning rate deriving means 42, an actual adsorption amount of ammonia adsorbed to the NOx catalyst is derived in accordance with an addition amount of ammonia and the consumption amount of ammonia by adsorption amount deriving means 45 and the reducing agent supplying means is controlled by controlling means 46 in accordance with the actual adsorption amount.