Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.

Abstract: The task of the present invention is to provide a magnetostrictive power generation device that is low cost and excellent in durability and can achieve a power generation amount equal to or exceeding those of conventional magnetostrictive power generation devices. The present invention provides a power-generating magnetostrictive element that is formed from a laminate comprising at least one electromagnetic steel sheet layer which comprises at least one electromagnetic steel sheet and satisfies at least one of the following Condition A and Condition B. Condition A: The at least one electromagnetic steel sheet layer comprises two or more electromagnetic sheets, and the two or more electromagnetic sheets are bonded to each other through a brazing material part. Condition B: The laminate further comprises at least one elastic material layer, and the at least one electromagnetic steel sheet layer is bonded to the elastic material layer through a brazing material part.

Abstract: The present invention has as its object to provide thickness 60 ?m or less ultra-thin stainless steel foil which secures high thickness precision and simultaneously secures plastic deformability and good elongation at break, that is, secures good press-formability (deep drawability). The present invention solves this problem by ultra-thin stainless steel foil which has three or more crystal grains in a thickness direction, has a recrystallization rate of 90% to 100%, and has a nitrogen concentration of a surface layer of 1.0 mass % or less. For this reason, there is provided a method of production of stainless steel foil comprising rolling stainless steel sheet, then performing final annealing and making a thickness 5 ?m to 60 ?m, wherein a rolling reduction ratio at rolling right before final annealing is 30% or more, a temperature of final annealing after rolling is 950° C. to 1050° C. in the case of austenitic stainless steel and 850° C. to 950° C.

Abstract: A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 ?m or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of ?m and a thickness of the Al-containing metal layer is T in units of ?m, the granular alloys satisfy x?0.5T.

Abstract: A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 ?m or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

Abstract: In a lead-free solder bump, diffusion of Cu from intermetallic compound layers, which are respectively formed at joining interfaces with Cu electrodes is suppressed, so that the in metallic compound layers are not likely to disappear. Correspondingly, with the use of the intermetallic compound layers, Cu is not likely to diffuse from the Cu electrodes into the lead-free solder bump. Even when an electric current flows continuously between a first electronic member and a second electronic member through the lead-free solder bump, the occurrences of the electromigration phemenon and the thermomigration phenomenon are suppressed. Thus, the present invention provides a lead-free solder bump joining structure capable of suppressing the disconnection failure caused by the synergistic effect of the electromigration phenomenon and the thermomigration phenomenon.

Abstract: Provided are a solder ball having extremely excellent drop impact resistance and an electronic member comprising the solder ball. The solder ball of the present invention contains Ni in an amount of from 0.04 to 0.2% by mass and the balance is Sn and incidental impurities, and Cu is not more than a detection limit of the ICP analysis. Hence, it is possible to provide the solder ball having extremely excellent drop impact resistance and an electronic member comprising the solder ball.

Abstract: The present invention has as its object to provide thickness 60 ?m or less ultra-thin stainless steel foil which secures high thickness precision and simultaneously secures plastic deformability and good elongation at break, that is, secures good press-formability (deep drawability). The present invention solves this problem by ultra-thin stainless steel foil which has three or more crystal grains in a thickness direction, has a recrystallization rate of 90% to 100%, and has a nitrogen concentration of a surface layer of 1.0 mass % or less. For this reason, there is provided a method of production of stainless steel foil comprising rolling stainless steel sheet, then performing final annealing and making a thickness 5 ?m to 60 ?m, wherein a rolling reduction ratio at rolling right before final annealing is 30% or more, a temperature of final annealing after rolling is 950° C. to 1050° C. in the case of austenitic stainless steel and 850° C. to 950° C.

Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 ?m and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.

Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Abstract: A flexible substrate has heat resistance to endure the high temperature such as sintering of a photovoltaic conversion layer of a compound-type thin film solar cell, can prevent permeation and/or diffusion of metal into the photovoltaic conversion layer, and can be used for many applications. The polyimide layer-containing flexible substrate has a metal substrate of metal foil made of ordinary steel or stainless steel having a coefficient of thermal expansion in a plane direction of not more than 15 ppm/K, or a metal substrate of metal foil made of that ordinary steel or stainless steel on the surface of which a metal layer comprising one of copper, nickel, zinc, or aluminum or an alloy layer of the same is provided, over which a polyimide layer having a layer thickness of 1.5 to 100 ?m and a glass transition point temperature of 300 to 450° C. is formed.

Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.