Patents by Inventor Shinichi Terashima
Shinichi Terashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130306352Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.Type: ApplicationFiled: July 16, 2010Publication date: November 21, 2013Applicants: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal CorporationInventors: Shinichi Terashima, Tomohiro Uno, Takashi Yamada, Daizo Oda
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Publication number: 20130236737Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 ?m and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.Type: ApplicationFiled: November 16, 2011Publication date: September 12, 2013Inventors: Shinichi Terashima, Takayuki Kobayashi, Masamoto Tanaka, Masami Fujishima, Masao Kurosaki, Jun Maki, Hideaki Suda, Shuji Nagasaki
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Publication number: 20130236734Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of ?m and a thickness of the Al-containing metal layer is T in units of ?m, the granular alloys satisfy x?0.5T.Type: ApplicationFiled: November 16, 2011Publication date: September 12, 2013Inventors: Takayuki Kobayashi, Shinichi Terashima, Masamoto Tanaka, Masami Fujishima, Masao Kurosaki, Jun Maki, Hideaki Suda, Shuji Nagasaki
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Publication number: 20120223430Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.Type: ApplicationFiled: August 4, 2011Publication date: September 6, 2012Applicant: Nippon Steel Materials Co., Ltd.Inventors: Shinichi Terashima, Masamoto Tanaka, Katsuichi Kimura
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Patent number: 8247911Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.Type: GrantFiled: January 15, 2008Date of Patent: August 21, 2012Assignees: Nippon Steel Materials Co., Ltd., Nippon Micrometal CorporationInventors: Tomohiro Uno, Shinichi Terashima, Keiichi Kimura, Takashi Yamada, Akihito Nishibayashi
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Publication number: 20120118610Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.Type: ApplicationFiled: July 16, 2010Publication date: May 17, 2012Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTDInventors: Shinichi Terashima, Tomohiro Uno, Takashi Yamada, Daizo Oda
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Publication number: 20120104613Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.Type: ApplicationFiled: January 12, 2012Publication date: May 3, 2012Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTD.Inventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi
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Publication number: 20120094121Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.Type: ApplicationFiled: June 23, 2010Publication date: April 19, 2012Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTD.Inventors: Tomohiro Uno, Shinichi Terashima, Takashi Yamada, Daizo Oda
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Publication number: 20120038042Abstract: A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn.Type: ApplicationFiled: April 12, 2010Publication date: February 16, 2012Applicants: Nippon Micrometal Corporation, Nippon Steel Materials Co., Ltd.Inventors: Tsutomu Sasaki, Shinichi Terashima, Masamoto Tanaka, Katsuichi Kimura
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Patent number: 8102061Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.Type: GrantFiled: July 24, 2008Date of Patent: January 24, 2012Assignees: Nippon Steel Materials Co., Ltd., Nippon Micrometal CorporationInventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi
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Patent number: 8097960Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.Type: GrantFiled: June 26, 2008Date of Patent: January 17, 2012Assignees: Nippon Steel Materials Co., Ltd, Nippon Micrometal CorporationInventors: Shinichi Terashima, Tomohiro Uno, Kohei Tatsumi, Takashi Yamada, Atsuo Ikeda, Daizo Oda
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Patent number: 7969021Abstract: A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.Type: GrantFiled: September 18, 2001Date of Patent: June 28, 2011Assignee: Nippon Steel CorporationInventors: Tomohiro Uno, Shinichi Terashima, Kohei Tatsumi
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Publication number: 20110120594Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.Type: ApplicationFiled: February 12, 2010Publication date: May 26, 2011Applicants: NIPPON STEEL MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tomohiro Uno, Shinichi Terashima, Takashi Yamada, Ryo Oishi, Daizo Oda
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Publication number: 20100327450Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.Type: ApplicationFiled: July 24, 2008Publication date: December 30, 2010Applicant: NIPPON STEEL MATERIALS CO., LTD.Inventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi
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Publication number: 20100213619Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.Type: ApplicationFiled: January 15, 2008Publication date: August 26, 2010Applicants: NIPPON STEEL MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Tomohiro Uno, Shinichi Terashima, Keiichi Kimura, Takashi Yamada, Akihito Nishibayashi
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Publication number: 20090072399Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.Type: ApplicationFiled: June 26, 2008Publication date: March 19, 2009Applicants: NIPPON STEEL MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATIONInventors: Shinichi Terashima, Tomohiro Uno, Kohei Tatsumi, Takashi Yamada, Atsuo Ikeda, Daizo Oda
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Patent number: 7390370Abstract: Gold bonding wires for semiconductor devices featuring increased strength and modulus of elasticity, stable loop shapes, suppressing the flow of wires, suppressing the leaning, and totally improved junctions of the wedge junction portions or wear characteristics for realizing a narrow-pitch connection, and enhanced the productivity on an industrial scale, and a method of producing the same. A gold bonding wire for a semiconductor device has a crystal grain structure in cross section in the lengthwise direction of the bonding wire, wherein a ratio of the area of crystal grains having an orientation [111] to the area of crystal grains having an orientation [100] is not smaller than 1.2 in the crystal orientations in the lengthwise direction of the wire.Type: GrantFiled: October 3, 2003Date of Patent: June 24, 2008Assignee: Nippon Steel CorporationInventors: Tomohiro Uno, Shinichi Terashima, Kohei Tatsumi
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Patent number: 7124858Abstract: An object of the invention is to provide a brake apparatus which can facilitate slope starting and slope climbing and which can be produced small in size and light in weight. In addition, another object of the invention is to provide a brake apparatus which can obtain a stable brake force under any conditions including running in the rain. The invention provides a brake apparatus in which a restriction is imposed on the rotation of a wheel (101) via a brake drum (3) provided on a rotational shaft of the wheel (101) so as to rotate together with the rotational shaft, the brake apparatus being characterized by comprising a brake shoe (30) for imposing a restriction on the rotation of the brake drum (3) in a forward or backward direction through wedge engagement with an inner circumferential surface of the brake drum (3) when the brake drum (3) rotates either in the forward direction or in the backward.Type: GrantFiled: February 15, 2002Date of Patent: October 24, 2006Assignee: Akebono Brake Industry Co., Ltd.Inventors: Hiroshi Ikegami, Hitoshi Furukawa, Shinichi Terashima, Minoru Mashiko
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Publication number: 20050079347Abstract: Gold bonding wires for semiconductor devices featuring increased strength and modulus of elasticity, stable loop shapes, suppressing the flow of wires, suppressing the leaning, and totally improved junctions of the wedge junction portions or wear characteristics for realizing a narrow-pitch connection, and enhanced the productivity on an industrial scale, and a method of producing the same. A gold bonding wire for a semiconductor device has a crystal grain structure in cross section in the lengthwise direction of the bonding wire, wherein a ratio of the area of crystal grains having an orientation [111] to the area of crystal grains having an orientation [100] is not smaller than 1.2 in the crystal orientations in the lengthwise direction of the wire.Type: ApplicationFiled: October 3, 2003Publication date: April 14, 2005Inventors: Tomohiro Uno, Shinichi Terashima, Kohei Tatsumi
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Publication number: 20050000755Abstract: An operating apparatus 1100 of a brake apparatus 1001 for restricting rotation of a brake drum 1003 including an operating lever 1112 and an operation restricting portion 1120 is provided. The operating lever 1112 is supported to be able to operate in a movable range. The movable range includes: a brake release mode permitting rotation of the brake drum 1003 both in regular rotation and reverse rotation; and an auxiliary brake mode restricting only reverse rotation of the brake drum. The operating lever 1112 is urged in a direction reaching the auxiliary brake mode from the brake release mode in a normal state. The operation restricting portion 1120 restricts a movement of the operating lever 1112 reaching the auxiliary brake mode by being brought into contact with the operating lever 1112 in the brake release mode.Type: ApplicationFiled: March 26, 2004Publication date: January 6, 2005Inventors: Hiroshi Ikegami, Hiroyasu Ishikawa, Minoru Mashiko, Hitoshi Furukawa, Yukimasa Mitsude, Shinichi Terashima