Abstract: A digital amplifier includes a digital PWM generator, a first amplifier circuit, a first low-pass filter, a second amplifier circuit, a second low-pass filter, an attenuator, an error extractor, an adder, and a voltage supply unit. The first amplifier circuit amplifies a digital PWM signal at a second voltage. The first low-pass filter extracts a low-frequency band voltage signal from the amplified digital PWM signal, and outputs the extracted voltage signal to a load. The second amplifier circuit amplifies the generated digital PWM signal at a third voltage. The error extractor extracts an error signal. The adder adds a digital error signal whose feedback gain is adjusted to a digital audio signal. The voltage supply unit generates the third voltage that has a voltage value of a predetermined ratio to a voltage value of the second voltage, and supplies the third voltage to the second amplifier circuit.

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

Abstract: A digital amplifier includes a digital PWM generator, a first amplifier circuit, a first low-pass filter, a second amplifier circuit, a second low-pass filter, an attenuator, an error extractor, an adder, and a voltage supply unit. The first amplifier circuit amplifies a digital PWM signal at a second voltage. The first low-pass filter extracts a low-frequency band voltage signal from the amplified digital PWM signal, and outputs the extracted voltage signal to a load. The second amplifier circuit amplifies the generated digital PWM signal at a third voltage. The error extractor extracts an error signal. The adder adds a digital error signal whose feedback gain is adjusted to a digital audio signal. The voltage supply unit generates the third voltage that has a voltage value of a predetermined ratio to a voltage value of the second voltage, and supplies the third voltage to the second amplifier circuit.

Abstract: There is included: a light receiving device configured to receive light and convert the received light into a light detection signal; a pixel transistor connected to the light receiving device and configured to control connection between the light receiving device and a signal line; a low-pass filter configured to be applied with respect to the light detection signal; an A-D converter configured to convert an output signal of the low-pass filter into digital data; and a sequencer configured to, prior to causing the A-D converter to operate to output the digital data, control the pixel transistor to be in an ON state and thereby maintain the light receiving device to be connected to the signal line, in a state in which the low-pass filter is caused to function effectively with respect to the light detection signal.

Abstract: An electrochemical sensor includes a base plate provided with a concave part formed on one of surfaces thereof, a fluid channel formed so that a bottom part of the concave part and the other one of the surfaces of the base plate are communicated with each other, a plurality of electrodes formed on the concave part; a reagent fixed on the electrodes, a cover which covers the concave part, and an air channel which causes the inside and outside of the concave part to be communicated with each other.

Abstract: There is included: a light receiving device configured to receive light and convert the received light into a light detection signal; a pixel transistor connected to the light receiving device and configured to control connection between the light receiving device and a signal line; a low-pass filter configured to be applied with respect to the light detection signal; an A-D converter configured to convert an output signal of the low-pass filter into digital data; and a sequencer configured to, prior to causing the A-D converter to operate to output the digital data, control the pixel transistor to be in an ON state and thereby maintain the light receiving device to be connected to the signal line, in a state in which the low-pass filter is caused to function effectively with respect to the light detection signal.

Abstract: A sensor cartridge for supplying a sensor is used. The sensor cartridge includes a casing within which the plurality of sensors can be arranged, and that allows a sample to be introduced to a sensor located at a preset location, and a connection structure. The connection structure electrically connects an external device and a sensor electrode of the sensor located at the preset location. The casing is formed so as to be held by the external device when the external device and the sensor electrode of the sensor are electrically connected via the connection structure.

Abstract: The disclosed digital amplifier (200) is provided with a voltage value conversion block (220) for converting a digital value of a digital pulse width of a digital modulation block (210) to a voltage value; and an integration circuit block (230) for generating a triangular wave by way of a master clock and modulating the generated triangular wave on the basis of a signal corresponding to the value of the modulation width of digital pulse width modulation. The disclosed digital amplifier (200) is provided with a low-pass filter (260) for demodulating pulse power that has been power-amplified by way of a drive circuit (250) to analog power of an audio band, and an error amplifier (290) for computing the voltage difference between the voltage of a low-pass filter (280) and the low-pass filter (260) and amplifying thereof.

Abstract: The disclosed digital amplifier (200) is provided with a voltage value conversion block (220) for converting a digital value of a digital pulse width of a digital modulation block (210) to a voltage value; and an integration circuit block (230) for generating a triangular wave by way of a master clock and modulating the generated triangular wave on the basis of a signal corresponding to the value of the modulation width of digital pulse width modulation. The disclosed digital amplifier (200) is provided with a low-pass filter (260) for demodulating pulse power that has been power-amplified by way of a drive circuit (250) to analog power of an audio band, and an error amplifier (290) for computing the voltage difference between the voltage of a low-pass filter (280) and the low-pass filter (260) and amplifying thereof.

Abstract: It is an object of the invention to provide a kit and method for identification of causative fungi of tinea unguium, which allows rapid and accurate identification of causative fungi by real-time PCR using primer sets and probes specific for fungal species.

Abstract: A semiconductor device includes a device isolation insulating film which is buried in a semiconductor substrate, a gate insulation film which is provided on the semiconductor substrate, a gate electrode which is provided on the gate insulation film, a source region and a drain region which are provided in the semiconductor substrate and spaced apart from each other in a manner to sandwich the gate electrode, both end portions of each of the source region and the drain region being offset from the device isolation insulating film in a channel width direction by a predetermined distance, and first and second gate electrode extension portions which are provided in a manner to cover both end portions of each of the source region and the drain region in a channel length direction.

Abstract: An electrochemical sensor includes a base plate provided with a concave part formed on one of surfaces thereof, a fluid channel formed so that a bottom part of the concave part and the other one of the surfaces of the base plate are communicated with each other, a plurality of electrodes formed on the concave part; a reagent fixed on the electrodes, a cover which covers the concave part, and an air channel which causes the inside and outside of the concave part to be communicated with each other.

Abstract: A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor.

Abstract: A semiconductor device includes a device isolation insulating film which is buried in a semiconductor substrate, a gate insulation film which is provided on the semiconductor substrate, a gate electrode which is provided on the gate insulation film, a source region and a drain region which are provided in the semiconductor substrate and spaced apart from each other in a manner to sandwich the gate electrode, both end portions of each of the source region and the drain region being offset from the device isolation insulating film in a channel width direction by a predetermined distance, and first and second gate electrode extension portions which are provided in a manner to cover both end portions of each of the source region and the drain region in a channel length direction.

Abstract: A semiconductor device includes a device isolation insulating film which is buried in a semiconductor substrate, a gate insulation film which is provided on the semiconductor substrate, a gate electrode which is provided on the gate insulation film, a source region and a drain region which are provided in the semiconductor substrate and spaced apart from each other in a manner to sandwich the gate electrode, both end portions of each of the source region and the drain region being offset from the device isolation insulating film in a channel width direction by a predetermined distance, and first and second gate electrode extension portions which are provided in a manner to cover both end portions of each of the source region and the drain region in a channel length direction.

Abstract: A projection display device includes: a projection portion which enlarges and projects the light modulated by a imager portion; a control circuit; and a main body cabinet. The projection portion is formed by a projection lens portion into which the light from the imager portion is entered and a mirror portion which reflects the light having passed through the projection lens portion and lets the light travel toward a projection plane. The mirror portion is disposed so as to be shifted from an optical axis of the projection lens portion in a direction opposite to a direction in which the incident light from the projection lens portion is turned back. The control circuit portion is disposed in a space which is produced between the projection lens portion and the main body cabinet by a position gap between the projection lens portion and the mirror portion.

Abstract: According to one embodiment, a nonvolatile memory device including MOS transistors formed in a surface of one semiconductor substrate is provided. The device includes a first and second MOS transistors. The first MOS transistor includes a first source and drain regions spaced from each other, a first gate insulating film provided on the surface, a first gate electrode provided on the first gate insulating film, and a first channel region located immediately below the first gate insulating film and containing impurities of both conductivity types. The second MOS transistor includes a second source and drain regions spaced from each other, a second gate insulating film provided on the surface, a second gate electrode provided on the second gate insulating film, and a second channel region located immediately below the second gate insulating film and having an identical concentration profile of the impurity to the first channel region.

Abstract: A sensor cartridge for supplying a sensor is used. The sensor cartridge includes a casing within which the plurality of sensors can be arranged, and that allows a sample to be introduced to a sensor located at a preset location, and a connection structure. The connection structure electrically connects an external device and a sensor electrode of the sensor located at the preset location. The casing is formed so as to be held by the external device when the external device and the sensor electrode of the sensor are electrically connected via the connection structure.

Abstract: Reagents which regulate human RC Kinase activity and reagents which bind to human RC Kinase gene products can be used to regulate this protein for therapeutic effects. Such regulation is particularly useful for treating chronic obstructive pulmonary disease, asthma, cancer, and diseases in which cell signaling is defective.

Abstract: A waterproof housing is provided with an engaging member that can engage with rotary members provided respectively on a plurality of cameras. The rotary members can be rotated from the outside of the waterproof housing. Accordingly, the plurality of cameras can be stored and operated selectively in a single waterproof housing. For example, the engaging member can be configured in such a manner that a plurality of multiple recessed portions are provided concentrically so that each one of the plurality of rotary members can be fitted to any one of the recessed portion out of the multiple recessed portions.