Abstract: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

Abstract: A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.

Abstract: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a <11-20> direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or ?30 degrees.

Abstract: An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.

Abstract: An organism information detecting apparatus includes a detector that detects organism information of a subject for a predetermined sampling time period, determines a motion state of the subject when the organism information is detected, and outputs an organism signal. A first calculator processes the organism signal to calculate organism information data, the detector determining a reliability degree of the organism information data based on whether the determined motion state of the subject is a previously determined motion state. A second calculator calculates an average value of the amount of variation per time of data obtained by digitizing the organism signal, the average value being data supplementary to the organism information data. The detector determines the motion state of the subject based on whether the supplementary data exceeds a previously determined threshold.

Abstract: A biometric information detecting apparatus has a biometric sensor for measuring biometric information for a predetermined time period. An A/D conversion portion acquires a sampling data by subjecting an output of the biometric sensor to A/D conversion. A storing portion stores the sampling data. A frequency analyzing portion subjects the sampling data stored in the storing portion to a frequency analysis and stores a result of the frequency analysis to in storing portion. A biometric state value calculating portion calculates a biometric state value from the result of the frequency analysis stored in the storing portion. An SN ratio calculating portion calculates an SN ratio from the result of the frequency analysis stored in the storing portion. A determining portion determines a reliability of the biometric state value based on whether the calculated SN ratio exceeds a predetermined threshold.

Abstract: A portable electronic apparatus has a main body case in which are disposed a display panel, a circuit board, and a dielectric antenna. The dielectric antenna is disposed at a vicinity of a peripheral edge portion of the circuit board.

Abstract: A health care system capable of altering the schedule appropriately depending on the physical condition of a user, a biological information terminal, a schedule managing method, and a schedule managing program. Physical condition information is detected or an action is instructed based on first schedule information, and based on the detection results of physical condition information or the result of an action instruction, information of schedule to be executed is altered from the first information to second schedule information.

Abstract: A portable electronic apparatus has a main body case in which are disposed a display panel, a circuit board, and a dielectric antenna. The dielectric antenna is disposed at a vicinity of a peripheral edge portion of the circuit board.

Abstract: The invention relates to an organism information detecting apparatus capable of determining a motion state of a subject when organism information is detected. The organism information detecting apparatus of the invention includes organism information detecting means for detecting organism information of the subject by being brought into contact with the subject by a previously determined sampling time period and outputting an organism signal, organism information data calculating means for calculating an organism information data by processing the organism signal, supplementary data calculating means for calculating an average value of a variation amount per time of a data constituted by digitizing the organism signal as a supplementary data of the organism information data, and data storing means for relating the organism information data and the supplementary data to be stored.

Abstract: The invention relates to a biometric information detecting apparatus for monitoring a state of a living body based on information constituted by adding an auxiliary data capable of determining a measuring state when biometric information is measured to a biometric state value.

Abstract: An organism information measuring device has two light irradiating parts that irradiate light of short and long wavelength, respectively, toward an organism, and two light receiving parts that receive backward scattered light from the organism and produce organism information signals according to the quantity of received light. A data processor determines organism information indicative of a condition of the organism based on the organism information signals. The two light irradiating parts may be combined into a single light irradiating part, with one of the light receiving parts disposed farther from the light irradiating part than the other and having a light receiving area larger in size than that of the other and proportional to the distance thereof from the light irradiating part.

Abstract: To improve an S/N ratio and increase a measurement accuracy of an organism information.

Abstract: The portable information apparatus has a battery, a boosting circuit for boosting a voltage of the battery, a battery voltage detector for detecting a voltage level of the battery, an oscillating circuit for generating CPU clock and a counting circuit for counting the interval from the start of the oscillation of the CPU clock to the time when it becomes stable. The apparatus negates the output of the battery voltage detector during the interval counted by the counting circuit so that it can prevent the monitoring of the battery voltage lowering in the time of usual performance from influencing of the battery potential drop due to the transient current at the start of the performance of the boosting circuit and the oscillating circuit.

Abstract: The synchronous serial communication circuit transmits and receives data, which is added flag patterns for recognizing the coil winding direction at the first and last of data block, by the electromagnetic induction system using a pair of coils. So, the circuit provides modulation and demodulation circuits acting at the clock of twice of the transfer speed and a flag check circuit for recognizing the inversion of the coil winding direction by judging a state of the flag patterns included in the received data. The transmitted data is converted into the biphase signal by the modulation circuit and is transmitted by driving the coil using the biphase signal. The signal received by the coil is converted into the received data by the demodulation circuit. When the winding directions of coils does not agree, the flag check circuit recognizes the inversion of the coil winding direction and the received data is inverted by the demodulation circuit.