Abstract: A method of inspecting a sensor sheet formed by a roll-to-roll scheme for a touch sensor, the sensor sheet including a roll sheet and a sensor electrode layer thereon, the sensor electrode layer including sensor electrodes running in a prescribed direction, the sensor sheet further including a terminal connected to the sensor electrode layer and alignment marks, the method including: arranging the sensor sheet on an inspection table of an inspection device, the inspection table having an alignment mark and inspection electrodes running in another prescribed direction such that at least one of the alignment marks aligns with the alignment mark on the inspection table and such that the inspection electrodes face the sensor electrodes orthogonally in a plan view and are vertically separated by a dielectric to form capacitances at respective intersections therebetween; measuring the capacitances at the respective intersections; and outputting the measured capacitances as an inspection result.

Abstract: Provided is a method for inspecting a touch panel with which method it is possible to perform an inspection with high accuracy and to allow an improvement in yield. A drive signal is supplied to either one of sensor electrodes (12) and an inspection electrode (142), a plurality of sense signals related to the respective sensor electrodes (12) are obtained from the other of the sensor electrodes and the inspection electrode, and conditions of the sensor electrodes (12) are determined according to the sense signals.

Abstract: There are provided a copper alloy for a slide bearing and a slide bearing, which can prevent Mn—Si primary crystals from causing seizure. The copper alloy for a slide bearing and a slide bearing according to the present invention contain 25 wt % or more and 48 wt % or less of Zn, 1 wt % or more and 7 wt % or less of Mn, 0.5 wt % or more and 3 wt % or less of Si, and 1 wt % or more and 10 wt % or less of Bi, the balance consisting of inevitable impurities and Cu, wherein there exist, in a sliding surface on which a counter material slides, Bi particles having a circle equivalent diameter larger than the average circle equivalent diameter of Mn—Si primary crystals and Bi particles having a circle equivalent diameter smaller than the average circle equivalent diameter of the Mn—Si primary crystals.

Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Abstract: There are provided a copper alloy for a bearing and a bearing, which can prevent seizure in Mn-Si primary crystals. The copper alloy for a bearing and the bearing according to the present invention contain 25 wt % or more and 48 wt % or less of Zn, 1 wt % or more and 7 wt % or less of Mn, 0.5 wt % or more and 3 wt % or less of Si, and 1 wt % or more and 10 wt % or less of Bi, the balance consisting of inevitable impurities and Cu, and are characterized in that, in a sliding surface on which a counter material slides, the proportion of triangles having an area of 5000 ?m2 or more and including no Bi particle with a circle equivalent diameter of 10 ?m or more, among triangles having the closest three Mn-Si primary crystals as apices, is 20 % or less.

Abstract: Provided is a vertical roller mill equipped with a rotary classifier for causing a plurality of classification blades provided above a rotary table and positioned around an axis to rotate about the axis, wherein: of a solid fuel pulverized by a roller, the rotary classifier guides solid fuel fine powder from an outer-circumferential-side space to an inner-circumferential-side space surrounded by the plurality of classification blades, and suppresses, by collision with the plurality of classification blades, an intrusion of solid fuel coarse powder into the inner-circumferential-side space; and each of the plurality of classification blades is shaped in a manner such that there is no interference between a scattering direction in which the coarse powder that collided with the classification blades scatters and an intake direction in which the fine powder is guided to the inner-circumferential-side space, and the scattering direction is oriented upward relative to a horizontal direction.

Abstract: Provided is a solid fuel pulverizing device (100) provided with: a ventilation unit (30) configured to ventilate an interior of a housing (11) with primary air for supplying a solid fuel pulverized by a roller (13) to a classifier (16); a pressure detector (50) configured to detect an internal pressure of the housing (11) relative to a reference pressure; a flow rate detector (60) configured to detect a flow rate of the primary air blown into the interior of the housing (11) by the ventilation unit (30); and a controller (40) configured to perform control and transition the solid fuel pulverizing device (100) to a stopped state upon the internal pressure detected by the pressure detector (50) being a predetermined pressure or higher and the flow rate of the primary air detected by the flow rate detector (60) being a predetermined flow rate or less.

Abstract: There are provided a copper alloy for a bearing and a bearing in which a Mn—Si compound is prevented from being broken and becoming a foreign matter. The copper alloy for a bearing and the bearing according to the present invention contain 25 wt % or more and 48 wt % or less of Zn, 1 wt % or more and 7 wt % or less of Mn, 0.5 wt % or more and 3 wt % or less of Si and 1 wt % or more and 10 wt % or less of Bi, the balance consisting of inevitable impurities and Cu, and are characterized in that the average width value among Mn—Si primary crystal particles dispersed in a sliding surface on which a counter shaft slides is 3 ?m or more.

Abstract: A p-type oxide semiconductor, which contains: a metal oxide containing thallium (Tl), where the metal oxide has been hole doped.

Abstract: The present invention improves the even distribution of a powder to a pulverized coal pipe. A rotary classifier including: a rotary shaft rotatably supported around a rotational axis extending in a vertical direction; a frame body supported by the rotary shaft and including an opening on the outer periphery of the frame body; a plurality of powder outlets provided along the rotation direction and opening on the upper section of the frame body; a plurality of blades extending in the vertical direction at the opening on the outer periphery of the frame body and provided along the rotation direction; and an annular member that serves as a constricting section provided so as to narrow the interval from the blades to the rotary shaft.

Abstract: A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.

Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Abstract: To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

Abstract: There is provided a control device of a coal pulverizer which enables estimation of a coal output with a precision suited for a purpose. In a control device of a coal pulverizer which pulverizes coal by the coal pulverizer and estimates coal output by which the pulverized coal is output to a boiler, the control device includes a main operation circuit which calculates a command signal associated with a coal feed rate on the basis of detection data from a boiler or a power generator connected to the boiler, and an additional control unit which calculates the deviation between a standard coal output pattern preset in the coal pulverizer, and a current coal output pattern, and adds a calculation result by the additional control unit to the main operation circuit as a correction signal.

Abstract: An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO) (ZO)mi(BO) (ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

Abstract: A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

Abstract: A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

Abstract: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.