Abstract: A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

Abstract: To provide a resin mold which is excellent in adhesion to a substrate, excellent in release properties from a transfer material resin, further excellent in durability of the resin mold itself, and which endures repetition transfer to the transfer material resin, a resin mold of the invention is a resin mold having a fine concavo-convex structure on the surface, and is characterized in that the fluorine element concentration (Es) in a resin mold surface portion is the average fluorine element concentration (Eb) in the resin forming the resin mold or more.

Abstract: A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

Abstract: A vertical roller mill provided with a cyclone-type fixed separator that separates fine powder and allows the separated powder to flow out to the outside, the cyclone-type fixed separator being provided inside a housing, wherein the fixed separator is configured so that a solid-gas two-phase flow is introduced from a fixed blade inlet window opening on a cone into the inside and the solid-gas two-phase flow is swirled using a fixed blade attached in the inside vicinity of the fixed blade inlet window, whereby the fine powder flows out to the outside from a pulverized coal outlet in an upper portion of the vertical roller mill through the lower end side of an inner cylinder provided inside the cone, a surface layer in which the rebound coefficient of collided particles is higher than in an iron plate surface being formed in the outer surface of the inner cylinder.

Abstract: Provided is a vertical roller mill equipped with a rotary classifier for causing a plurality of classification blades provided above a rotary table and positioned around an axis to rotate about the axis, wherein: of a solid fuel pulverized by a roller, the rotary classifier guides solid fuel fine powder from an outer-circumferential-side space to an inner-circumferential-side space surrounded by the plurality of classification blades, and suppresses, by collision with the plurality of classification blades, an intrusion of solid fuel coarse powder into the inner-circumferential-side space; and each of the plurality of classification blades is shaped in a manner such that there is no interference between a scattering direction in which the coarse powder that collided with the classification blades scatters and an intake direction in which the fine powder is guided to the inner-circumferential-side space, and the scattering direction is oriented upward relative to a horizontal direction.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

Abstract: A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

Abstract: To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm?3 or greater.

Abstract: A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.

Abstract: A mill roller (6) is provided with a roller main body (62) that rotates about an inclined axis line (O2) and has an outer peripheral surface (64) for pulverizing an object to be crushed against the mill table (4). The outer peripheral surface (64) is convex outward in a radial direction of the roller main body (62). The outer peripheral surface (64) has a first outer peripheral surface (641) and a second outer peripheral surface (642). The first outer peripheral surface (641) has an arcuate shape formed to have the same radius of curvature on both sides of a maximum outer diameter point (A). The second outer peripheral surface (642) is further receded inward in the radial direction than an imaginary circle running along the first outer peripheral surface (641).

Abstract: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

Abstract: Provided is a solid fuel pulverizing device (100) provided with: a ventilation unit (30) configured to ventilate an interior of a housing (11) with primary air for supplying a solid fuel pulverized by a roller (13) to a classifier (16); a pressure detector (50) configured to detect an internal pressure of the housing (11) relative to a reference pressure; a flow rate detector (60) configured to detect a flow rate of the primary air blown into the interior of the housing (11) by the ventilation unit (30); and a controller (40) configured to perform control and transition the solid fuel pulverizing device (100) to a stopped state upon the internal pressure detected by the pressure detector (50) being a predetermined pressure or higher and the flow rate of the primary air detected by the flow rate detector (60) being a predetermined flow rate or less.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

Abstract: A mill roller (6) is provided with a roller main body (62) that rotates about an inclined axis line (O2) and has an outer peripheral surface (64) for pulverizing an object to be crushed against the mill table (4). The outer peripheral surface (64) is convex outward in a radial direction of the roller main body (62). The outer peripheral surface (64) has a first outer peripheral surface (641) and a second outer peripheral surface (642). The first outer peripheral surface (641) has an arcuate shape formed to have the same radius of curvature on both sides of a maximum outer diameter point (A). The second outer peripheral surface (642) is further receded inward in the radial direction than an imaginary circle running along the first outer peripheral surface (641).

Abstract: To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Abstract: A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solven

Abstract: A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

Abstract: Provided is a roller mill that is provided with: a rotary table; a raw coal adding tube that supplies solid fuel to the rotary table; and a roller that rotates about a rotating shaft by being pressed against a grinding surface of the rotary table and grinds solid fuel along with rotation of the rotary table. In such a roller mill, a position where an outer peripheral surface of the roller and the grinding surface of the rotary table come into contact with each other and a circumferential velocity of the outer peripheral surface equals a circumferential velocity of the grinding surface is located further to an inner circumferential side of the rotary table than a position where the outer peripheral surface and the grinding surface come into contact with each other at a center position in a width direction of the roller.

Abstract: A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

Abstract: Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.