Abstract: An extreme ultraviolet light generation system is an extreme ultraviolet light generation system which is used with a laser apparatus and is connected to an external device so as to supply extreme ultraviolet light thereto, and the extreme ultraviolet light generation system may include: a chamber provided with at least one inlet through which a laser beam is introduced thereinto; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element disposed inside the chamber; an etching gas introduction unit provided to the chamber through which etching gas passes, the etching gas being introduced to etch debris of the target material which is emitted when the target material is irradiated with the laser beam inside the chamber and adheres to the at least one optical element; and at least one temperature control mechanism for controlling a temperature of the at least one optical eleme

Abstract: An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.

Abstract: An extreme ultraviolet light source apparatus comprises a target supply unit supplying a target into a vacuum chamber, a laser oscillator outputting a laser light into the vacuum chamber, a collector mirror outputting an extreme ultraviolet light outside by reflecting the extreme ultraviolet light emitted from the target being ionized as a plasma by irradiation with the laser light at a plasma luminescence point in the vacuum chamber, and an ion debris removal unit at least a part of which is located in an obscuration region including the plasma luminescence point.

Abstract: An extreme ultraviolet light source apparatus has a magnetic field generator which generates a magnetic field region around a direction of the magnetic field passing through a plasma region in which a plasma is to be generated and converges charged particles including ion emitted from the plasma region toward the direction of the magnetic field, a first charged particle collector (receiver) mounted at both sides of an axis of the magnetic field in the magnetic field region in order to collect (receive) the charged particles converged by the magnetic field, a target supply unit supplying a target from a nozzle located outside a converging region in which the charged particles are to be converged inside the magnetic field region in an extreme ultraviolet light generating chamber, and a target collector located at a position opposite to the nozzle, the target retrieval portion retrieving a residual target which does not contribute to generation of the plasma.

Abstract: According to an aspect of the present invention, there are provided an ion trap mass spectrometry method and an ion trap mass spectrometry device using a mass spectrometer, the mass spectrometer including: an ion source part for ionizing a sample; an ion trap part for trapping ions generated in the ion source; a main high frequency power source for applying a main high frequency voltage to the ion trap part, and an auxiliary high frequency power source for applying an auxiliary high frequency voltage thereto; and a detector for detecting the ions ejected from the ion trap. The ion trap mass spectrometry method and the ion trap mass spectrometry device includes the steps of: accumulating desired ions into the ion trap part by ejecting undesired ions while accumulating ions into the ion trap part; and ejecting undesired ions that remain in the ion trap part and leaving the desired ions in the ion trap part are repeated alternately.

Abstract: An excimer laser device capable of suppressing deterioration of optical elements provided in a laser chamber even if output energy per pulse is increased more than the conventional level, in which a width of a laser beam applied to the optical elements provided in the laser chamber is enlarged so as to reduce the energy density of the laser beam within such a range that a laser output of no less than a desired level is obtained.

Abstract: A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in particular) laser light irradiation. A first window (2) and a second window (3) of the gas discharge chamber have an incident plane and an emitting plane in parallel with a (111) crystal plane of their calcium fluoride crystal. With respect to an arrangement where laser light entering the calcium fluoride crystal passes through a plane including a <111> axis and a <001> axis of each of the first window (2) and the second window (3) as seen from inside the chamber (1), the first window (2) and the second window (3) are arranged in positions rotated in the same direction by the same angle about their <111> axis.

Abstract: At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.

Abstract: A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when discharge is started by an oscillating laser device (100) to a time when discharge is started by the amplifying laser device (300) is controlled, and the spectral purity range (E95) is controlled to be stabilized.

Abstract: An extreme ultraviolet light source apparatus generating an extreme ultraviolet light from plasma generated by irradiating a target material with a laser light within a chamber, and controlling a flow of ions generated together with the extreme ultraviolet light using a magnetic field or an electric field, the extreme ultraviolet light source apparatus comprises an ion collector device collecting the ion via an aperture arranged at a side of the chamber, and an interrupting mechanism interrupting movement of a sputtered particle in a direction toward the aperture, the sputtered particle generated at an ion collision surface collided with the ion in the ion collector device.

Abstract: In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.

Abstract: In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

Abstract: An extreme ultraviolet light source apparatus has a magnetic field generator which generates a magnetic field region around a direction of the magnetic field passing through a plasma region in which a plasma is to be generated and converges charged particles including ion emitted from the plasma region toward the direction of the magnetic field, a first charged particle collector (receiver) mounted at both sides of an axis of the magnetic field in the magnetic field region in order to collect (receive) the charged particles converged by the magnetic field, a target supply unit supplying a target from a nozzle located outside a converging region in which the charged particles are to be converged inside the magnetic field region in an extreme ultraviolet light generating chamber, and a target collector located at a position opposite to the nozzle, the target retrieval portion retrieving a residual target which does not contribute to generation of the plasma.

Abstract: A degree of polarization control device includes: a calcium fluoride crystal substrate for transmitting a laser beam; a polarization monitor for measuring the degree of polarization of a laser beam transmitted through the calcium fluoride crystal substrate; and a controller for controlling the rotation angle of the calcium fluoride crystal substrate according to the degree of polarization measured by the polarization monitor; the calcium fluoride crystal substrate being formed by a flat plate having a laser beam entering surface and a laser beam exiting surface running in parallel with the (111) crystal face, the Brewster angle being selected for the incident angle, the rotation angle around the [111] axis operating as a central axis being controlled by the controller.

Abstract: An extreme ultraviolet light source apparatus comprises a target supply unit supplying a target into a vacuum chamber, a laser oscillator outputting a laser light into the vacuum chamber, a collector mirror outputting an extreme ultraviolet light outside by reflecting the extreme ultraviolet light emitted from the target being ionized as a plasma by irradiation with the laser light at a plasma luminescence point in the vacuum chamber, and an ion debris removal unit at least a part of which is located in an obscuration region including the plasma luminescence point.

Abstract: An extreme ultraviolet light source apparatus provided with a magnetic field forming unit having sufficient capability of protection against ions radiated from plasma while using a relatively small magnetic source. The apparatus includes: a target nozzle for injecting a target material; a driver laser for applying a laser beam to the target material to generate plasma; a collector mirror for collecting extreme ultraviolet light radiated from the plasma; and a magnetic field forming unit including at least one magnetic source and at least one magnetic material having two leading end parts projecting from the at least one magnetic source to face each other with a plasma emission point in between, and forming a magnetic field between a trajectory of the target material and the collector mirror.

Abstract: An EUV light source apparatus in which contamination or damage of optical elements and other component elements by debris can be suppressed to realize longer lives of them. The EUV light source apparatus is an apparatus for radiating extreme ultraviolet light by generating plasma of a target material within a chamber, and includes: a first laser unit for applying a first laser beam to the target material to generate pre-plasma; a second laser unit for applying a second laser beam to the pre-plasma to generate a main plasma for radiating the extreme ultraviolet light; and a magnetic field generating unit for generating a magnetic field within the chamber to control a state of at least one of the pre-plasma and the main plasma.

Abstract: At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.

Abstract: Performing an MS3 with a tandem mass spectrometer causes problems of increase in size of the device and of increase in cost. Likewise, a plural number of times MS/MS analyses are even more difficult. An electrode to create a harmonic potential is disposed in a collision cell, and fragment ions produced by the first-time collision induced dissociation are accumulated in the harmonic potential. Target ions of the subsequent stage are let out, by means of an axial resonance excitation, selectively from the accumulated ions. The ions are excited in the axial direction to have a potential exceeding the harmonic potential. Thereby, the second-time collision induced dissociation is performed by means of a potential difference provided at the subsequent stage. In addition, an operation to return the ions back to the harmonic potential enables a plural number of times MS/MS analyses to be performed.

Abstract: A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when discharge is started by an oscillating laser device (100) to a time when discharge is started by the amplifying laser device (300) is controlled, and the spectral purity range (E95) is controlled to be stabilized.