Patents by Inventor Shinji Ohno
Shinji Ohno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160043231Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.Type: ApplicationFiled: October 22, 2015Publication date: February 11, 2016Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Masahiro TAKAHASHI, Hideyuki KISHIDA
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Patent number: 9184296Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.Type: GrantFiled: March 7, 2012Date of Patent: November 10, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Masahiro Takahashi, Hideyuki Kishida
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Patent number: 9112036Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.Type: GrantFiled: May 29, 2012Date of Patent: August 18, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Shunpei Yamazaki
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Patent number: 9040984Abstract: To provide a semiconductor device which includes a gate insulating film with high withstand voltage and thus can have high reliability. The semiconductor device includes an oxide semiconductor film over an insulating surface; a pair of first conductive films over the oxide semiconductor film; a first insulating film, a second insulating film, and a third insulating film which are stacked in this order over the oxide semiconductor film and the pair of first conductive films; and a second conductive film overlapping with the oxide semiconductor film over the first to third insulating films. The first insulating film and the third insulating film contain silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum oxynitride. The second insulating film contains gallium oxide, zirconium oxide, or hafnium oxide.Type: GrantFiled: November 12, 2013Date of Patent: May 26, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Watanabe, Shinji Ohno
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Publication number: 20150140730Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.Type: ApplicationFiled: December 15, 2014Publication date: May 21, 2015Inventors: Junichi KOEZUKA, Yuichi SATO, Shinji OHNO
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Patent number: 9035304Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.Type: GrantFiled: August 5, 2014Date of Patent: May 19, 2015Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Sachiaki Tezuka, Tomokazu Yokoi, Yusuke Shino
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Patent number: 9006735Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.Type: GrantFiled: March 27, 2014Date of Patent: April 14, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Ohno, Yuichi Sato, Junichi Koezuka, Sachiaki Tezuka
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Publication number: 20150037932Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.Type: ApplicationFiled: August 14, 2014Publication date: February 5, 2015Inventors: Shunpei YAMAZAKI, Atsuo ISOBE, Toshihiko SAITO, Takehisa HATANO, Hideomi SUZAWA, Shinya SASAGAWA, Junichi KOEZUKA, Yuichi SATO, Shinji OHNO
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Patent number: 8927982Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.Type: GrantFiled: March 8, 2012Date of Patent: January 6, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Yuichi Sato, Shinji Ohno
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Publication number: 20140342499Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.Type: ApplicationFiled: August 5, 2014Publication date: November 20, 2014Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Sachiaki TEZUKA, Tomokazu YOKOI, Yusuke SHINO
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Patent number: 8865663Abstract: An administration method comprising: determining a cancer type through (i) first data indicating that an Estrogen Receptor (ER) is negative and a Human Epidermal growth factor Receptor-2 (Her2) is negative, or (ii) second data indicating that at least one of the ER and the Her2 is positive; and when the cancer type is determined through (i) the first data indicating that the ER is negative and the Her2 is negative: first performing a docetaxel administration cycle comprising administrating docetaxel to a patient multiple times at certain intervals; and then performing a 5-fluorouracil, epirubicin, and cyclophosphamide (FEC) administration cycle comprising administrating 5-fluorouracil, epirubicin, and cyclophosphamide to the patient multiple times at certain intervals, and when the cancer type is determined through (ii) the second data indicating that at least one of the ER and Her2 is positive: first performing the FEC administration cycle; and then performing the docetaxel administration cycle.Type: GrantFiled: January 26, 2009Date of Patent: October 21, 2014Assignee: Japan Breast Cancer Research GroupInventors: Masakazu Toi, Hiroji Iwata, Katsumasa Kuroi, Seigo Nakamura, Shinji Ohno, Norikazu Masuda, Kenjiro Aogi, Nobuaki Sato, Futoshi Akiyama, Masafumi Kurosumi, Hitoshi Tsuda
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Patent number: 8859330Abstract: A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.Type: GrantFiled: March 14, 2012Date of Patent: October 14, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato
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Patent number: 8809992Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.Type: GrantFiled: January 23, 2012Date of Patent: August 19, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Atsuo Isobe, Toshihiko Saito, Takehisa Hatano, Hideomi Suzawa, Shinya Sasagawa, Junichi Koezuka, Yuichi Sato, Shinji Ohno
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Patent number: 8802493Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.Type: GrantFiled: September 6, 2012Date of Patent: August 12, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Sachiaki Tezuka, Tomokazu Yokoi, Yusuke Shino
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Publication number: 20140209899Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.Type: ApplicationFiled: March 27, 2014Publication date: July 31, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Shinji OHNO, Yuichi SATO, Junichi KOEZUKA, Sachiaki TEZUKA
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Publication number: 20140131701Abstract: To provide a semiconductor device which includes a gate insulating film with high withstand voltage and thus can have high reliability. The semiconductor device includes an oxide semiconductor film over an insulating surface; a pair of first conductive films over the oxide semiconductor film; a first insulating film, a second insulating film, and a third insulating film which are stacked in this order over the oxide semiconductor film and the pair of first conductive films; and a second conductive film overlapping with the oxide semiconductor film over the first to third insulating films. The first insulating film and the third insulating film contain silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum oxynitride. The second insulating film contains gallium oxide, zirconium oxide, or hafnium oxide.Type: ApplicationFiled: November 12, 2013Publication date: May 15, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu WATANABE, Shinji OHNO
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Patent number: 8716073Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.Type: GrantFiled: July 12, 2012Date of Patent: May 6, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Ohno, Yuichi Sato, Junichi Koezuka, Sachiaki Tezuka
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Publication number: 20130062600Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.Type: ApplicationFiled: September 6, 2012Publication date: March 14, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Sachiaki TEZUKA, Tomokazu YOKOI, Yusuke SHINO
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Publication number: 20130023087Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.Type: ApplicationFiled: July 12, 2012Publication date: January 24, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Shinji OHNO, Yuichi SATO, Junichi KOEZUKA, Sachiaki TEZUKA
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Publication number: 20120319100Abstract: A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.Type: ApplicationFiled: May 30, 2012Publication date: December 20, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kyoko YOSHIOKA, Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Shinya SASAGAWA