Patents by Inventor Shinji Ohno
Shinji Ohno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120315735Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.Type: ApplicationFiled: May 29, 2012Publication date: December 13, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Shunpei YAMAZAKI
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Publication number: 20120315730Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.Type: ApplicationFiled: May 31, 2012Publication date: December 13, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Shunpei YAMAZAKI
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Publication number: 20120244658Abstract: A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.Type: ApplicationFiled: March 14, 2012Publication date: September 27, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO
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Publication number: 20120235137Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.Type: ApplicationFiled: March 8, 2012Publication date: September 20, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Yuichi SATO, Shinji OHNO
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Publication number: 20120228606Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.Type: ApplicationFiled: March 7, 2012Publication date: September 13, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Masahiro TAKAHASHI, Hideyuki KISHIDA
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Publication number: 20120225543Abstract: A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced.Type: ApplicationFiled: February 23, 2012Publication date: September 6, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shinji OHNO, Yuichi SATO, Junichi KOEZUKA
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Publication number: 20120187397Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.Type: ApplicationFiled: January 23, 2012Publication date: July 26, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Atsuo ISOBE, Toshihiko SAITO, Takehisa HATANO, Hideomi SUZAWA, Shinya SASAGAWA, Junichi KOEZUKA, Yuichi SATO, Shinji OHNO
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Patent number: 8196998Abstract: A vehicle front structure has a pair of right and left apron side members 1 each extending in the vehicle longitudinal direction and having a closed cross section structure, a bumper 2 located on the vehicle front side Fr of the front end portion of the apron side member 1, and a grille 5 attached to air intake openings 3, 4 in the bumper 2. In this vehicle front structure, shock absorbing parts 20 formed integrally with the grille 5 are disposed between the bumper 2 and the front end portions of the apron side members 1.Type: GrantFiled: March 18, 2010Date of Patent: June 12, 2012Assignee: Suzuki Motor CorporationInventors: Shinji Ohno, Taku Sumino, Hironori Shigemasu, Idemitsu Masuda, Akito Miyazaki
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Publication number: 20110015144Abstract: There was no device that proposes a method for administrating anti-cancer drugs according to each of cancer types. An administration method proposing device (100) includes an input unit (101) that receives an input of the cancer type of a cancer patient, an administration procedure determination unit (102) that determines the administration order of an FEC (F: 5-fluorouracil, E: epirubicin, and C: cyclophosphamide) administration cycle and a docetaxel administration cycle, and a display unit (103) that displays the administration order of the FEC administration cycle and the docetaxel administration cycle, as a result of the determination by the administration procedure determination unit (102).Type: ApplicationFiled: January 26, 2009Publication date: January 20, 2011Inventors: Masakazu Toi, Hiroji Iwata, Katsumasa Kuroi, Seigo Nakamura, Shinji Ohno, Norikazu Masuda, Kenjiro Aogi, Nobuaki Sato, Futoshi Akiyama, Masafumi Kurosumi, Hitoshi Tsuda
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Publication number: 20100244481Abstract: A vehicle front structure has a pair of right and left apron side members 1 each extending in the vehicle longitudinal direction and having a closed cross section structure, a bumper 2 located on the vehicle front side Fr of the front end portion of the apron side member 1, and a grille 5 attached to air intake openings 3, 4 in the bumper 2. In this vehicle front structure, shock absorbing parts 20 formed integrally with the grille 5 are disposed between the bumper 2 and the front end portions of the apron side members 1.Type: ApplicationFiled: March 18, 2010Publication date: September 30, 2010Applicant: SUZUKI MOTOR CORPORATIONInventors: Shinji OHNO, Taku SUMINO, Hironori SHIGEMASU, Idemitsu MASUDA, Akito MIYAZAKI
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Patent number: 6592802Abstract: The present invention provides a process for continuously producing a polymer sheet having an excellent surface smoothness, an apparatus for producing such a polymer sheet, and an optical polymer sheet produced by such a process. The process for producing a polymer sheet comprises coating or laminating, on a polymer base sheet, an ultraviolet-curing resin composition, adhering the coated or laminated polymer base sheet to a member having a smooth surface whose maximum surface roughness (Rmax) satisfies Rmax≦0.1 &mgr;m, in a state that the ultraviolet-curing resin composition is soft, and applying an ultraviolet light to transfer smoothness of the smooth surface of the member onto the polymer base sheet.Type: GrantFiled: March 26, 2002Date of Patent: July 15, 2003Assignee: Sumitomo Bakelite Company LimitedInventors: Hideki Goto, Junji Tanaka, Toshimasa Eguchi, Tsuyoshi Takenaka, Shinji Ohno
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Patent number: 6563332Abstract: The present invention is a checker head for inspecting an object having even a small test pad pitch, without using a wired socket. The checker head includes a pin to be brought into contact with a test pad of the object, a conductor connected to a circuit tester, and a spring in contact with the pin and conductor and disposed linearly between the pin and conductor. Another mode of checker head has a structure in which a pin to be brought into contact with a test pad of an object and a conductor in contact with the pin and connected to a circuit tester are arranged in line and inserted through laminated body including an elastic layer, and the position of the pin and conductor are restricted by the elastic layer.Type: GrantFiled: May 9, 2000Date of Patent: May 13, 2003Assignee: Ibiden Co., Ltd.Inventors: Yoshihiro Goto, Shinji Ohno, Yasumitsu Murase
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Patent number: 6535010Abstract: A checker head including an intermediate plate which is sandwiched between a front plate and a rear plate. A front tip part of an electro-conductive contact protrudes from a front surface of the front plate and is configured to contact an object to be inspected. A conductive wire is inserted into a rear through hole of the rear plate and bonded to the rear plate. An electro-conductive spring is provided in an intermediate through hole of the intermediate plate between the conductive wire and a rear brim part of the contact pin in a compressed state. One end of the conductive wire which contacts the spring and a front surface of the rear plate which faces the an intermediate plate is on a same plane.Type: GrantFiled: March 9, 2001Date of Patent: March 18, 2003Assignee: Ibiden Co., Ltd.Inventor: Shinji Ohno
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Publication number: 20020113611Abstract: The present invention is a checker head for inspecting an object having even a small test pad pitch, without using a wired socket. The checker head includes a pin to be brought into contact with a test pad of the object, a conductor connected to a circuit tester, and a spring in contact with the pin and conductor and disposed linearly between the pin and conductor. Another mode of checker head has a structure in which a pin to be brought into contact with a test pad of an object and a conductor in contact with the pin and connected to a circuit tester are arranged in line and inserted through laminated body including an elastic layer, and the position of the pin and conductor are restricted by the elastic layer.Type: ApplicationFiled: May 9, 2000Publication date: August 22, 2002Inventors: YOSHIHIRO GOTO, SHINJI OHNO, YASUMITSU MURASE
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Patent number: 6391075Abstract: A packaged air filter part and a method of packaging the air filter part are provided to suppress the absorption of organic substances by the air filter part. The air filter part is encased within a packaging material and has a filter medium capable of cleaning air in at least a part thereof. The dibutyl phthalate content per 1 g of the filter medium is 1.0 &mgr;g or lower when the filter medium is taken out of the encasing of the packaging material. The air filter package unit includes the air filter part, and a packaging material arranged so that the filter medium is shielded from outside air. The method of packaging an air filter includes a step of producing air filter part, a step of packaging the air filter part with a first material, and a step of further packaging the packaged air filter part with a second material.Type: GrantFiled: October 10, 2000Date of Patent: May 21, 2002Assignee: Daikin Industries, Ltd.Inventors: Kazuhiro Meiji, Seiichi Hirano, Osamu Inoue, Shinji Ohno
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Publication number: 20010035761Abstract: A checker head including an intermediate plate which is sandwiched between a front plate and a rear plate. A front tip part of an electro-conductive contact protrudes from a front surface of the front plate and is configured to contact an object to be inspected. A conductive wire is inserted into a rear through hole of the rear plate and bonded to the rear plate. An electro-conductive spring is provided in an intermediate through hole of the intermediate plate between the conductive wire and a rear brim part of the contact pin in a compressed state. One end of the conductive wire which contacts the spring and a front surface of the rear plate which faces the an intermediate plate is on a same plane.Type: ApplicationFiled: March 9, 2001Publication date: November 1, 2001Applicant: IBIDEN CO., LTD.Inventor: Shinji Ohno
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Patent number: 5288403Abstract: A filter for removing leucocytes comprising a filter medium, said filter medium being a fibrous material made of a polyester fiber which is treated on its surface with a copolymer containing 40 to 80% by weight of units derived from glucosyloxyethyl methacylate.When the filter of the present invention is used, leucocytes are removed from concentrated platelets or platelet-rich plasma without loss of platelets.Type: GrantFiled: February 24, 1993Date of Patent: February 22, 1994Assignee: Nissoh CorporationInventor: Shinji Ohno