Abstract: An aft section structure of a jet engine with an axis is comprised of a casing defining a duct around the axis and opened axially fore and aft; a cone tapering aftward at a first angle with the axis and having a pointed end; guide vanes, each of the vanes radially extending from the cone to the casing and comprising a pressure side at a second angle with a plane containing the axis; spray bars, each of the spray bars extending radially within the duct and comprising trailing sides, each of the trailing sides being directed aftward at a third angle with a plane containing the axis; and flame holders, each of the flame holders extending radially within the duct and comprising one or more interior sides, each of the interior sides being directed aftward at a fourth angle with a plane containing the axis.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.20?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.2?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.

Abstract: An object of the present invention is to provide a highly-reliable content addressable memory. Provided is a content addressable memory including: a plurality of CAM cells; a word line joined to the CAM cells; a plurality of bit lines joined to the CAM cells; a plurality of search lines joined to the CAM cells; a match line joined to the CAM cells; a match amplifier joined to the match line; and a selection circuit that can select the output of the match amplifier in accordance with the value of the word line.

Abstract: A semiconductor device capable of improving operating margins is provided. The semiconductor device comprises a memory circuit including a memory cell comprised of a SOTB transistor, and a mode designation circuit switching operation modes of the memory circuit for a first mode or a second mode. The memory circuit includes a substrate bias generation circuit supplying a substrate bias voltage to the SOTB transistor and a timing signal generation circuit generating a timing signal used for a reading operation or a writing operation of the memory circuit. The substrate bias generation circuit does not supply the substrate bias voltage to the SOTB transistor in the second mode.

Abstract: This free-cutting copper alloy comprises 76.0-78.7% Cu, 3.1-3.6% Si, 0.40-0.85% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 75.0?f1=Cu+0.8×Si?7.5×Sn+0.5×Pb?78.2; 60.0?f2=Cu?4.8×Si—0.8×Sn?P+0.5×Pb?61.5; and 0.09?f3=P/Sn?0.30. The area percentage (%) of respective constituent phases satisfies the following relations: 30???65; 0???2.0; 0???0.3; 0???2.0; 96.5?f4=?+?; 99.4?f5=?+?+?+?; 0?f6=?+??3.0; and 35?f7=1.05×?+6×?1/2+0.5×??70. ? phase is present in ? phase, the long side of the ? phase is at most 50 ?m, and the long side of the ? phase is at most 25 ?m.

Abstract: This free-cutting copper alloy comprises 75.4-78.7% Cu, 3.05-3.65% Si, 0.10-0.28% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 76.5?f1=Cu+0.8×Si?8.5×Sn+P?80.3; 60.7?f2=Cu?4.6×Si?0.7×Sn?P?62.1; and 0.25?f7=P/Sn?1.0. The area percentage (%) of respective constituent phases satisfies the following relations: 28???67; 0???1.0; 0???0.2; 0???1.5; 97.4?f3=?+?; 99.4?f4=?+?+?+?; 0?f5=?+??2.0; and 30?f6=?+6×?1/2+0.5×??70. The long side of the ? phase is at most 40 ?m, the long side of the ? phase is at most 25 ?m, and ? phase is present in ? phase.

Abstract: This free-cutting copper alloy casting contains: 76.0-79.0% Cu, 3.1-3.6% Si, 0.36-0.85% Sn, 0.06-0.14% P, 0.022-0.10% Pb, with the remainder being made up of Zn and unavoidable impurities. This composition satisfies the following relations: 75.5?f1=Cu+0.8×Si?7.5×Sn+P+0.5×Pb?78.7, 60.8?f2=Cu?4.5×Si—0.8×Sn?P+0.5×Pb?62.2, 0.09?f3=P/Sn?0.35. The area ratios (%) of the constituent phases satisfy the following relations, 30???63, 0???2.0, 0???0.3, 0???2.0, 96.5?f4=?+?, 99.3?f5=?+?+?+?, 0?f6=?+??3.0, and 37?f7=1.05×?+6×?1/2+0.5×??72. The ? phase is present within the ? phase, the long side of the ? phase does not exceed 50 ?m, and the long side of the ? phase does not exceed 25 ?m.

Abstract: The present invention provides a surface treatment method that improves antimicrobial activity of copper or a copper alloy and enhances immediate effects of antimicrobial actions on the surface of the copper or the copper alloy. A surface treatment method for copper or a copper alloy according to the present invention comprises preparing a reducing agent solution containing a biological reducing substance, and treating the surface of the copper or the copper alloy with the reducing agent solution. The present invention also provides a surface treatment liquid for sterilizing copper or a copper alloy, in which the surface treatment liquid contains a biological reducing substance. The present invention also provides a sterilization method that comprises bringing copper or a copper alloy treated by the surface treatment method into contact with a surface of an object to sterilize the surface of the object.

Abstract: A semiconductor storage device includes a plurality of memory cells arranged in a matrix, a word line provided corresponding to a memory cell row, a dummy word line formed in a metal interconnection layer adjacent to a metal interconnection layer in which the word line is formed, a word driver circuit configured to drive the word line, and a dummy word driver circuit configured to increase voltage on the word line based on interline capacitance between the word line and the dummy word line.

Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.

Abstract: A thrust increasing device includes: a fuel injector that ejects fuel toward a jet flow; an ignition device that is disposed downstream from the fuel injector; a cylindrical duct that surrounds a combustion region; a flame holder that is disposed in the duct; and a swirling flow generating part that maintains an axial flow of the jet flow in an axial direction of the duct in an outer region of the duct in a radial direction inside the duct and that converts the jet flow to a swirling flow centered on an axis of the duct in an inner region of the duct in the radial direction inside the duct.

Abstract: This free-cutting copper alloy contains 76.0%-79.0% Cu, 3.1%-3.6% Si, 0.36%-0.84% Sn, 0.06%-0.14% P, 0.022%-0.10% Pb, with the remainder being made up of Zn and unavoidable impurities. The composition satisfies the following relations: 74.4?f1=Cu+0.8×Si?8.5×Sn+P+0.5×Pb?78.2, 61.2?f2=Cu?4.4×Si?0.7×Sn?P+0.5×Pb?62.8, 0.09?f3=P/Sn?0.35. The area ratio (%) of the constituent phases satisfies the following relations: 30???65, 0???2.0, 0???0.3, 0???2.0, 96.5?f4=?+?, 99.4?f5=?+?+?+?, 0?f6=?+??3.0, 36?f7=1.05×?+6×?1/2+0.5×??72. The ? phase is present within the ? phase, the long side of the ? phase does not exceed 50 ?m, and the long side of the ? phase does not exceed 25 ?m.

Abstract: A parameter selection support system that supports, based on a capacity of a drive device, selection of parameters of an operation pattern and parameters of mechanical condition for a load that is driven by the drive device and includes a display unit that displays an input screen for the parameters, a reception unit that receives the parameters and the capacity, and a controller that calculates an allowable range for each of some of the parameters that is allowable for the capacity received by the reception unit and causes the display unit to display the allowable range on the input screen. The parameters of the operation pattern include a moving amount of the load.

Abstract: A semiconductor device capable of detecting whether test operation is normal is provided. The semiconductor device includes a plurality of memory cells arranged in a matrix, a plurality of word lines provided corresponding to each of the rows of the plurality of memory cells respectively, a decoder for generating driving signals for driving the plurality of word lines, and a detection circuit provided between the plurality of word lines and the decoder for simultaneously raising the plurality of word lines by test operation and detecting whether or not the rising state of the plurality of word lines is normal.

Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.

Abstract: This free-cutting copper alloy contains 75.0%-78.5% Cu, 2.95%-3.55% Si, 0.07%-0.28% Sn, 0.06%-0.14% P, and 0.022%-0.25% Pb, with the remainder being made up of Zn and inevitable impurities. The composition satisfies the following relations: 76.2?f1=Cu+0.8×Si?8.5×Sn+P+0.5×Pb?80.3, 61.5?f2=Cu?4.3×Si?0.7×Sn?P+0.5×Pb?63.3. The area ratios (%) of the constituent phases satisfy the following relations: 25???65, 0???1.5, 0???0.2, 0???2.0, 97.0?f3=?+?, 99.4?f4=?+?+?+?, 0?f5=?+??2.5, 27?f6=?+6×?1/2+0.5×??70. The long side of the ? phase does not exceed 40 ?m, the long side of the ? phase does not exceed 25 ?m, and the ? phase is present within the ? phase.

Abstract: A semiconductor device is comprised of a memory cell array with multiple memory cells arranged in a matrix, multiple bit-line pairs provided for each memory cell column in the memory cell array, multiple input/output circuits provided respectively corresponding to the multiple bit-line pairs, and as interface control circuit that controls the data input/output to the multiple input/output circuits when performing the data write and data read for each memory cell row in a normal mode. The interface control circuit is comprised of a selection circuit. When the data write and data read are performed for each memory cell row in a test mode, the selection circuit selects the data input/output to one of first input/output circuit and a second input/output circuit, respectively corresponding to a first memory cell included in the memory cell row and a second memory cell adjoining the first memory cell, according to a test address.

Abstract: This free-cutting copper alloy casting contains 75.0-78.5% Cu, 2.95-3.55% Si, 0.07-0.28% Sn, 0.06-0.14% P, 0.022-0.20% Pb, with the remainder being made up of Zn and unavoidable impurities. The composition satisfies the following relations: 76.2?f1=Cu+0.8×Si?8.5×Sn+P+0.5×Pb?80.3, 61.2?f2=Cu?4.4×Si?0.8×Sn?P+0.5×Pb?62.8. The area ratios (%) of the constituent phases satisfy the following relations: 2.5??65, 0???2.0, 0???0.3, 0???2.0, 96.5?f3=?+?, 99.2?f4=?+?+?+?, 0?f6=?+??3.0, 29?f6=?+6×?1/2+0.5×??66. The long side of the ? phase does not exceed 50 ?m, the long side of the ? phase does not exceed 25 ?m, and the ? phase is present within the ? phase.