Abstract: A manufacturing method for a wheel disc, includes forming a flange portion, wherein the flange portion is formed such that an inner mold and an outer mold having a cylindrical inner surface with a first inside radius larger than the first outside radius and placed above the inner mold coaxially to the inner mold are brought close relative to each other in an axial direction by one stroke so that the outer edge of the disc material is bent downward, and the cylindrical inner surface of the outer mold is provided with recessed portions hollowed outwardly in a wheel radial direction, the recessed portions being formed in ranges corresponding to the window portions in the wheel circumferential direction and in a range from a middle position to a bottom end in the wheel axial direction.

Abstract: A manufacturing method for a wheel disc, includes forming a flange portion, wherein the flange portion is formed such that an inner mold and an outer mold having a cylindrical inner surface with a first inside radius larger than the first outside radius and placed above the inner mold coaxially to the inner mold are brought close relative to each other in an axial direction by one stroke so that the outer edge of the disc material is bent downward, and the cylindrical inner surface of the outer mold is provided with recessed portions hollowed outwardly in a wheel radial direction, the recessed portions being formed in ranges corresponding to the window portions in the wheel circumferential direction and in a range from a middle position to a bottom end in the wheel axial direction.

Abstract: A capsule device, which can induce vascular bed formation and formation of a space for cell transplantation in subcutaneous tissue in which the device is implanted, is provided. A sustained drug release capsule device, which is to be subcutaneously implanted for subcutaneous sustained release of an angiogenesis-inducing factor as well as formation of a vascular bed as a basis for cell transplantation and a space for cell transplantation in cell therapy, the capsule being made of a material which is not soluble in a biological body and does not adhere to a biological body, and having micropores for sustained release of the angiogenesis-inducing factor.

Abstract: A manufacturing method for a wheel disc, includes forming a flange portion, wherein the flange portion is formed such that an inner mold and an outer mold having a cylindrical inner surface with a first inside radius larger than the first outside radius and placed above the inner mold coaxially to the inner mold are brought close relative to each other in an axial direction by one stroke so that the outer edge of the disc material is bent downward, and the cylindrical inner surface of the outer mold is provided with recessed portions hollowed outwardly in a wheel radial direction, the recessed portions being formed in ranges corresponding to the window portions in the wheel circumferential direction and in a range from a middle position to a bottom end in the wheel axial direction.

Abstract: A motor is provided with a circuit board that is connected to a coil of a stator. A male connection portion is formed in part of the outer periphery of the circuit board. A casing accommodates the circuit board. The male connection portion is exposed to the outside from an opening formed in the casing. A female connector is connected to a cable and is able to engage with the male connection portion.

Abstract: A high-frequency dielectric heating method in which an object to be heated is disposed between opposing electrodes and is heated, which is capable of suppressing a local temperature rise on opposing surfaces of the plurality of objects to be heated without reducing heating speed, and heating the plurality of objects to be heated in a short time. The method, in which an object to be heated (M) is disposed between opposing electrodes (101) and (102) and is heated, includes: disposing a plurality of the objects (M) in a direction in which the electrodes (101) and (102) oppose each other; and heating the plurality of the objects (M) in a state in which the plurality of the objects (M) are spaced apart by a predetermined distance or more by interposing a sheet member (110) between the plurality of the objects (M).

Abstract: A connector assembly is provided and includes receptacle connector and a header connector. The receptacle connector includes a connector housing with a receptacle contact, a fastener, and a lock. The fastener includes a fastening section fixed at an outer end portion thereof. The lock attaches to the connector housing and is movable along a length thereof. The header connector is engageable with the receptacle connector and includes a header contact that is connectable with the receptacle contact, a header housing, and an elastic fastener. The header housing has an engagement portion to which the header contact is attached and that engages the connector housing, and the elastic fastener extends outward from the engagement portion of the header housing.

Abstract: Provided is a high-frequency dielectric heating device in which fine impedance adjustment can be achieved easily and with high precision while reducing a device cost and simplifying a device structure. A high-frequency dielectric heating device (10) includes a high-frequency power supply (20), a pair of electrodes (30) disposed opposite each other, reflected power detector 60 connected between the electrodes (30) and the high-frequency power supply (20) and detects reflected power generated when a heating subject is heated, and an impedance matching device (40) that adjusts the reflected power, wherein the matching device (40) includes a capacitor (C1) connected in parallel to the high-frequency power supply (20), and at least one of a capacitor (C2) and a coil (L) connected in series to the electrodes (30), at least a reactance of the capacitor or the coil being adjustable, and the high-frequency power supply (20) is configured to have a variable frequency.

Abstract: A heating device and a heating method are disclosed, by which an irregularly shaped object can be evenly and efficiently heated by a plurality of conductive pins smoothly sliding inside through holes so that their tips sufficiently follow the irregular shape of the object, while damage to the conductive pins or the object is prevented. The heating device 100 heats an object M placed between opposing electrodes 101 and 102. At least one of the electrodes 101 includes a retention plate 130 for retaining a plurality of conductive pins 110 supported in an electrode plate 120 in a state in which the conductive pins 110 are slid away from an opposite electrode 102, and a release mechanism 140 for releasing the plurality of conductive pins 110 from retention by the retention plate 130.

Abstract: A connector mounted to a circuit board and mating with a mating connector in a mating direction extending along the circuit board is disclosed. The connector comprises a contact having a resilient contact portion, a housing retaining the contact and having a pair of restricting projections, and a retainer having a resilient retainer portion. The retainer is disposed between the pair of restricting projections and retains the housing on the circuit board. The pair of restricting projections restricts movement between the housing and the circuit board in the mating direction and the resilient contact portion and the resilient retainer portion permit movement between the housing and the circuit board in a plurality of directions perpendicular to the mating direction.

Abstract: In a step of forming a fixing groove for a wheel disk (20), an inner circumferential end of a first hub hole peripheral portion (41) is squeezed by a protruding portion (D21) of a back die (D2) and a dent portion (D31) of a front die (D3). In this manner, a fixing groove (50) is formed in a back surface of the first hub hole peripheral portion (41). Along with this, an excess material is pushed into the dent portion (D31) so that a protrusion (51) is formed on a front surface of the first hub hole peripheral portion (41). Thus, without requiring a step of cutting the excess material, the fixing groove (50) can be formed in a back surface of a hub hole peripheral portion (30).

Abstract: A connector mounted to a circuit board and mating with a mating connector in a mating direction extending along the circuit board is disclosed. The connector comprises a contact having a resilient contact portion, a housing retaining the contact and having a pair of restricting projections, and a retainer having a resilient retainer portion. The retainer is disposed between the pair of restricting projections and retains the housing on the circuit board. The pair of restricting projections restricts movement between the housing and the circuit board in the mating direction and the resilient contact portion and the resilient retainer portion permit movement between the housing and the circuit board in a plurality of directions perpendicular to the mating direction.

Abstract: A connector is provided and includes a barrel, an end bell, an assembly nut, and a securing mechanism. The end bell includes a spring arm and a seat portion. The assembly nut includes a projection disposed on the seat portion and engaging the spring arm to couple the barrel to the end bell. The securing mechanism secures the barrel and the assembly nut to each other.

Abstract: In a step of forming a fixing groove for a wheel disk (20), an inner circumferential end of a first hub hole peripheral portion (41) is squeezed by a protruding portion (D21) of a back die (D2) and a dent portion (D31) of a front die (D3). In this manner, a fixing groove (50) is formed in a back surface of the first hub hole peripheral portion (41). Along with this, an excess material is pushed into the dent portion (D31) so that a protrusion (51) is formed on a front surface of the first hub hole peripheral portion (41). Thus, without requiring a step of cutting the excess material, the fixing groove (50) can be formed in a back surface of a hub hole peripheral portion (30).

Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Abstract: A semiconductor light-emitting element includes a substrate having a convex portion protruding therefrom. A first semiconductor layer having a first conductivity type is separated from the substrate in a first direction. A second semiconductor layer of a second conductivity type is between the first semiconductor layer and the substrate. A third semiconductor is between the first and second semiconductor layers. A first electrode is provided between the first semiconductor layer and the substrate, and is electrically connected to the first semiconductor layer. A second electrode is provided between the second semiconductor layer and the substrate, and is electrically connected to the second semiconductor layer. A metal layer is between the first electrode and the second region, and between the second electrode and the first region. The metal layer includes a concave portion which conforms to the convex portion of the substrate.

Abstract: According to one embodiment, a semiconductor light emitting device includes a base body, first to third semiconductor layers, a first conductive layer, first and second insulating layers. The first semiconductor layer includes a region of a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the base body, and has a second conductivity type. The third semiconductor layer is provided between the first and second semiconductor layers. The first conductive layer is provided between a part of the second semiconductor layer and the base body. The first conductive layer is electrically connected to the second semiconductor layer. The first insulating layer is provided between another part of the second semiconductor layer and the base body and between the first conductive layer and the base body. The second insulating layer is provided between the first insulating layer and the base body.

Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.