Abstract: A locking structure includes a terminal fitting and a terminal containing portion that holds and contains the terminal fitting so that the terminal fitting is electrically connected to a connection counterpart in a condition that at least part of the connection counterpart is inserted in the terminal containing portion. A first lock projection which is elastically deformable and is provided on the terminal fitting is locked on a second lock projection which is provided on the terminal containing portion. The at least part of the connection counterpart inserted in the terminal containing portion restricts elastic deformation of the first lock projection in a direction in which the first lock projection is unlocked from the second lock projection.

Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Abstract: A semiconductor light emitting element includes a substrate and a stacked body. The stacked body is aligned with the substrate. The stacked body includes first and second semiconductor layers, a light emitting layer, and first and second electrodes. The first semiconductor layer has a first face including first and second portions. The first portion is provided with a plurality of convex portions. The second portion is aligned with the first portion. The second semiconductor layer is provided facing the second portion. The light emitting layer is provided between the second portion and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the light emitting layer. An interval of each of the convex portions is no less than 0.5 times and no more than 4 times a wavelength of a light emitted from the light emitting layer.

Abstract: A connector is provided and includes a barrel, an end bell, an assembly nut, and a securing mechanism. The end bell includes a spring arm and a seat portion. The assembly nut includes a projection disposed on the seat portion and engaging the spring arm to couple the barrel to the end bell. The securing mechanism secures the barrel and the assembly nut to each other.

Abstract: A connector assembly is provided and includes receptacle connector and a header connector. The receptacle connector includes a connector housing with a receptacle contact, a fastener, and a lock. The fastener includes a fastening section fixed at an outer end portion thereof. The lock attaches to the connector housing and is movable along a length thereof. The header connector is engageable with the receptacle connector and includes a header contact that is connectable with the receptacle contact, a header housing, and an elastic fastener. The header housing has an engagement portion to which the header contact is attached and that engages the connector housing, and the elastic fastener extends outward from the engagement portion of the header housing.

Abstract: A motor is provided with a circuit board that is connected to a coil of a stator. A male connection portion is formed in part of the outer periphery of the circuit board. A casing accommodates the circuit board. The male connection portion is exposed to the outside from an opening formed in the casing. A female connector is connected to a cable and is able to engage with the male connection portion.

Abstract: According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes Alx1Ga1-x1-y1Iny1N having a first Mg concentration. The second layer is provided between the first layer and the p-type semiconductor layer, and includes Alx2Ga1-x2-y2Iny2N having a second Mg concentration higher than the first Mg concentration. The third layer is provided between the second layer and the p-type semiconductor layer, and includes Alx3Ga1-x3-y3Iny3N having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.

Abstract: A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer.

Abstract: An electrical connector housing is disclosed having a first housing member, and a second housing member mated with the first housing member. A front wall is disposed on an outer surface of at least one of the housing members and extends perpendicular to an insertion direction. A first sidewall is disposed on the outer surface of the first housing member and extends along the insertion direction, perpendicular to the front wall. A second sidewall is disposed on the outer surface of the second housing member and extends along the insertion direction, parallel with the first sidewall and perpendicular to the front wall. A cantilevered first lock arm extends along an insertion direction and is positioned between the first sidewall and second sidewall. The lock arm includes a fixed end, a free end, and a hook.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.

Abstract: The various embodiments disclosed herein utilize multiple lasers that have different wavelengths and a single detection path. The lasers are mounted orthogonal to one another so that one laser will provide a forward angle light scatter (FALS) signal in the detection path, and one laser will provide a side scatter signal in the detection path (i.e., the single detection optics are approximately in-line with the FALS laser and approximately orthogonal to the side scatter laser). The single detector path spectrally separates the forward and side scatter signals prior to applying them to their respective detectors for measurement.

Abstract: Disclosed is a wire array rubber connector (10), including: an electrical insulating rubber (2); and a plurality of conductive metal wires (1) that are arrayed in a thickness direction of the electrical insulating rubber so as to pass through front and back surfaces of the electrical insulating rubber, and localized so as to be electrically connectable to electrical terminals that are disposed at predetermined positions on the front and back surfaces of the electrical insulating rubber. The electrical insulating rubber (2) is a flame-resistant rubber achieving V-0 based on the UL-94 standard.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

Abstract: The invention provides a heating device and a heating method, by which an irregularly shaped object can be evenly and efficiently heated by a plurality of conductive pins smoothly sliding inside through holes so that their tips sufficiently follow the irregular shape of the object, while damage to the conductive pins or the object is prevented. The heating device 100 heats an object M placed between opposing electrodes 101 and 102. At least one of the electrodes 101 includes retention means 130 for retaining a plurality of conductive pins 110 supported in an electrode plate 120 in a state in which the conductive pins 110 are slid away from an opposite electrode 102, and release means 140 for releasing the plurality of conductive pins 110 from retention by the retention means 130.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.

Abstract: A locking structure of a terminal fitting includes a terminal fitting, a terminal containing portion that holds and contains the terminal fitting, and a restriction member that is separate from and is attached to the terminal containing portion. A lock projection of the terminal fitting is locked on a holding-side lock portion of the terminal containing portion at a lock position of the holding-side lock portion. The holding-side lock portion is provided so as to be deformed elastically in such a direction as to reduce an elastic deformation amount of the lock projection being moved toward the lock position for the elastic restoration. The restriction member has a restriction wall which restricts elastic deformation of the holding-side lock portion in an unlocking direction in which the lock with the lock projection is released.

Abstract: A locking structure includes a terminal fitting and a terminal containing portion that holds and contains the terminal fitting so that the terminal fitting is electrically connected to a connection counterpart in a condition that at least part of the connection counterpart is inserted in the terminal containing portion. A first lock projection which is elastically deformable and is provided on the terminal fitting is locked on a second lock projection which is provided on the terminal containing portion. The at least part of the connection counterpart inserted in the terminal containing portion restricts elastic deformation of the first lock projection in a direction in which the first lock projection is unlocked from the second lock projection.

Abstract: A locking structure of a terminal fitting includes a terminal fitting, a terminal containing portion that holds and contains the terminal fitting therein, and a restriction member that is attached to the terminal containing portion. The terminal fitting is locked in the terminal containing portion by a lock projection of the terminal fitting. The terminal containing portion has a guide space formed by a gap between the lock projection and an inner wall surface of the terminal containing portion to guide the terminal fitting to a lock position therethrough. The restriction member has a restriction wall which is butted by the lock projection of the terminal fitting and thereby prevents from releasing of the terminal fitting when the terminal fitting is moved in such a direction as to be released from the terminal containing portion.