Abstract: A piezoelectric device includes a connecting section connecting a pair of beam sections adjacent to each other. The connecting section is connected to one of the pair of beam sections at a first end portion. The connecting section is connected to another of the pair of beam sections at a second end portion. The second end portion faces the first end portion in a direction in which the pair of beam sections are aligned. A second coupling portion is located along a first coupling portion. The connecting section includes only one first end portion. The connecting section includes only one second end portion. Each of the first end portion and the second end portion is closer to a tip end portion than to a fixed end portion of each of the pair of beam sections.

Abstract: An ultrasonic wave generation device including: an ultrasonic wave generation source; an ultrasonic wave condensation part; and a waveguide. The ultrasonic wave condensation part has a first reflection surface opposed to the ultrasonic wave generation source and a second reflection surface opposed to the first reflection surface. The first reflection surface reflects the ultrasonic wave, generated from the ultrasonic wave generation source, toward the second reflection surface. The second reflection surface reflects the ultrasonic wave, which has been reflected by the first reflection surface, toward the waveguide so as to introduce the ultrasonic wave into the waveguide. The waveguide protrudes from the first reflection surface to a side opposite the second reflection surface. A recessed portion is formed from the first reflection surface to the second reflection surface side along an outer circumferential surface of the waveguide.

Abstract: A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.

Abstract: An image forming apparatus includes a rotatable photosensitive member, a charging member, a developing device, a transfer member, a brush, a driving source and a control portion. The control portion controls the driving source to execute an image forming process in which image formation on the recording material is executed and a non-image-forming process in which the photosensitive member is driven to rotate other than in the image forming process. The non-image-forming process between a first recording material and a second recording material, to which the image formation is executed following the first recording material, is defined as a first non-image-forming process, and the non-image-forming process between the second recording material and a third recording material is defined as a second non-image-forming process.

Abstract: An image forming apparatus includes a photosensitive drum, a charging member, a developing member, a transfer member, a brush, a drive unit, a control unit, and a memory. The charging member charges a surface of the photosensitive drum at a charging portion. The transfer member comes into contact with the photosensitive drum to form a transfer portion. The drive unit rotatably drive the photosensitive drum. The control unit controls the drive unit to perform an image forming operation. The memory stores information about the image forming operation. In a case where the image forming operation is performed and a non-image forming operation is performed after the image forming operation, the control unit performs control such that a switching operation for stopping the photosensitive drum after the photosensitive drum is driven and re-driving the photosensitive drum is performed a plurality of times based on the information about the image forming operation.

Abstract: A mechanism that enables developer replenishment by a simpler structure and a mechanism that enables more user-friendly developer replenishment are provided. An attachment port to which a developer supply bottle containing a developer stored therein is detachably attachable is disposed in an interior of an image forming apparatus. The developer supply bottle can be attached when the cover is in an open state. According to this image forming apparatus, when the developer supply bottle is attached to the attachment port, the developer inside the developer supply bottle moves into a developer housing chamber by its own weight.

Abstract: An image forming apparatus to and from which a replenishment container accommodating toner is attachable and detachable includes a replenishment port to allow replenishment of toner from the replenishment container, an opening/closing portion to open the replenishment port in an open position and close the replenishment port in a closed position, a locking member to move between a restricting position in which the locking member restricts movement of the opening/closing portion from the closed position to the open position, and an allowing position in which the movement of the opening/closing portion from the closed position to the open position is allowed. A developer container accepts more toner for replenishment in a case where a second display is in a second state than in a first state, and a first display more accurately displays information related to the toner accommodated in the developer container than the second display.

Abstract: A semiconductor failure analysis device includes an analysis part that analyzes a failure place in a semiconductor device; a marking part that irradiates the semiconductor device with laser light; a device arrangement part in which a wafer chuck, which holds the semiconductor device and on which an alignment target is provided, moves relative to the analysis part and the marking part; and a control part that outputs commands. The control part moves the wafer chuck to a position at which the analysis part is capable of taking an image of the alignment target, then outputs an alignment command that causes the marking part to be aligned with the analysis part with the alignment target as a reference, and irradiates the semiconductor device with laser light in a state in which a positional relationship between the marking part and the analysis part is maintained.

Abstract: A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

Abstract: A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

Abstract: A method for recycling a Ni-based single crystal superalloy part or unidirectionally solidified superalloy part provided with a thermal barrier coating containing at least a ceramic on a surface of a Ni-based single crystal superalloy substrate or Ni-based unidirectionally solidified superalloy substrate, in which the method including the steps of: melting and desulfurizing a Ni-based single crystal superalloy part or Ni-based unidirectionally solidified superalloy part at a temperature of the melting point or more of the Ni-based single crystal superalloy or Ni-based unidirectionally solidified superalloy and less than the melting point of the ceramic; heating a casting mold for a recycled Ni-based single crystal superalloy part or casting mold for a recycled Ni-based unidirectionally solidified superalloy part to a temperature of the melting point or more of the Ni-based single crystal superalloy or Ni-based unidirectionally solidified superalloy; pouring the desulfurized melted Ni-based single crystal supe

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

Abstract: An inspection system includes a laser light source, an optical system for laser marking that irradiates a semiconductor device with laser light from a metal layer side, a control unit that controls the laser light source to control laser marking, a two-dimensional camera that detects light from the semiconductor device on a substrate side and outputs an optical reflection image, and an analysis unit that generates a pattern image of the semiconductor device, and the control unit controls the laser light source so that laser marking is performed until a mark image appears in a pattern image.

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device including a substrate and a metal layer formed on the substrate, and the inspection method includes specifying a fault point in the semiconductor device by inspecting the semiconductor device, and irradiating the semiconductor device with laser light having a wavelength that is transmitted through the substrate from the substrate side so that a marking is formed at least at a boundary between the substrate and the metal layer on the basis of the fault point.

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device including a substrate and a metal layer formed on the substrate, and the inspection method includes specifying a fault point in the semiconductor device by inspecting the semiconductor device, and irradiating the semiconductor device with laser light having a wavelength that is transmitted through the substrate from the substrate side so that a marking is formed at least at a boundary between the substrate and the metal layer on the basis of the fault point.

Abstract: An inspection system includes a laser light source, an optical system for laser marking that irradiates a semiconductor device with laser light from a metal layer side, a control unit that controls the laser light source to control laser marking, a two-dimensional camera that detects light from the semiconductor device on a substrate side and outputs an optical reflection image, and an analysis unit that generates a pattern image of the semiconductor device, and the control unit controls the laser light source so that laser marking is performed until a mark image appears in a pattern image.

Abstract: An inspection system includes a laser light source, an optical system for laser marking that irradiates a semiconductor device with laser light from a metal layer side, a control unit that controls the laser light source to control laser marking, a two-dimensional camera that detects light from the semiconductor device on a substrate side and outputs an optical reflection image, and an analysis unit that generates a pattern image of the semiconductor device, and the control unit controls the laser light source so that laser marking is performed until a mark image appears in a pattern image.

Abstract: A method for recycling a Ni-based single crystal superalloy part or unidirectionally solidified superalloy part provided with a thermal barrier coating containing at least a ceramic on a surface of a Ni-based single crystal superalloy substrate or Ni-based unidirectionally solidified superalloy substrate, in which the method including the steps of: melting and desulfurizing a Ni-based single crystal superalloy part or Ni-based unidirectionally solidified superalloy part at a temperature of the melting point or more of the Ni-based single crystal superalloy or Ni-based unidirectionally solidified superalloy and less than the melting point of the ceramic; heating a casting mold for a recycled Ni-based single crystal superalloy part or casting mold for a recycled Ni-based unidirectionally solidified superalloy part to a temperature of the melting point or more of the Ni-based single crystal superalloy or Ni-based unidirectionally solidified superalloy; pouring the desulfurized melted Ni-based single crystal supe

Abstract: A thermal power plant has an exhaust gas system, a feed-water system, a high-pressure feed-water heater provided to the feed-water system, a main economizer, a catalytic NOx removal equipment, and a sub economizer. The main economizer is provided to the secondary side of the high-pressure feed-water heater of the feed-water system and increases the temperature of the feed-water by using the residual heat of the combustion gas from the boiler. The catalytic NOx removal equipment is provided to the secondary side of the main economizer of the exhaust gas system. The exhaust gas is supplied to the catalytic NOx removal equipment at a required temperature or higher. The sub economizer is provided between the high-pressure feed-water heater and the main economizer and increases the temperature of water by using the exhaust gas on the secondary side of the NOx removal equipment.