Patents by Inventor Shinya Arai
Shinya Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230075993Abstract: According to one embodiment, a semiconductor memory device comprises a substrate, a first conductive layer, and a second conductive layer arranged in this order in a first direction and separated from each other, a first semiconductor film extending in the first direction, intersecting the first conductive layer, and being in contact with the second conductive layer, and a first charge storage film arranged between the first semiconductor film and the first conductive layer, and being in contact with the second conductive layer, wherein the first semiconductor film includes a first portion formed of an n-type semiconductor at approximately a same height as the first conductive layer.Type: ApplicationFiled: December 8, 2021Publication date: March 9, 2023Applicant: Kioxia CorporationInventors: Koichi SAKATA, Shinya ARAI, Susumu HASHIMOTO, Akira MINO, Shunsuke OKADA, Keisuke NAKATSUKA
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Publication number: 20230023666Abstract: According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.Type: ApplicationFiled: October 7, 2022Publication date: January 26, 2023Applicant: Kioxia CorporationInventor: Shinya ARAI
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Patent number: 11562976Abstract: According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.Type: GrantFiled: March 2, 2021Date of Patent: January 24, 2023Assignee: KIOXIA CORPORATIONInventors: Takahiro Tomimatsu, Shinya Arai
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Publication number: 20230017218Abstract: A semiconductor device including a first chip and a second chip. The first chip includes: a first substrate; a first transistor that is provided on the first substrate; and a first pad that is provided above the first transistor and that is electrically connected to the first transistor. The second chip includes: a second pad that is provided on the first pad; a second substrate that is provided above the second pad and that includes a first diffusion layer and a second diffusion layer, at least one of the first diffusion layer and the second diffusion layer being electrically connected to the second pad; and an isolation insulating film or an isolation trench that extends at least from an upper surface of the second substrate to a lower surface of the second substrate within the second substrate and that isolates the first diffusion layer from the second diffusion layer.Type: ApplicationFiled: September 26, 2022Publication date: January 19, 2023Applicant: Kioxia CorporationInventors: Yasuhiro UCHIYAMA, Shinya ARAI, Koichi SAKATA, Takahiro TOMIMATSU
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Patent number: 11552000Abstract: According to one embodiment, a stacked body includes a plurality of electrode layers stacked with an insulator interposed. A conductive via pierces the stacked body, and connects an upper layer interconnect and a lower layer interconnect. A insulating film is provided between the via and the stacked body. A distance along a diametral direction of the via between a side surface of the via and an end surface of one of the electrode layers opposing the side surface of the via is greater than a distance along the diametral direction between the side surface of the via and an end surface of the insulator opposing the side surface of the via.Type: GrantFiled: October 26, 2020Date of Patent: January 10, 2023Assignee: Kioxia CorporationInventors: Yasuhito Yoshimizu, Yoshiro Shimojo, Shinya Arai
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Publication number: 20220406811Abstract: A semiconductor storage device includes a stack, a columnar body, and a second conductive layer. The stack includes a plurality of first conductive layers and a plurality of insulating layers. In the stack, the plurality of first conductive layers and the plurality of insulating layers are alternately stacked one by one in a first direction. The second conductive layer is connected to the columnar body. The columnar body includes an insulating core, a memory film, and a semiconductor channel. The memory film is provided between the plurality of first conductive layers and the insulating core. The semiconductor channel is provided between the insulating core and the memory film. An upper surface of the insulating core is located lower than an upper end of the columnar body. The second conductive layer has a main body portion and a protrusion. The protrusion protrudes from the main body portion toward the upper surface of the insulating core, and extends in the first direction within the columnar body.Type: ApplicationFiled: March 1, 2022Publication date: December 22, 2022Applicant: Kioxia CorporationInventor: Shinya ARAI
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Publication number: 20220399312Abstract: A semiconductor device includes a first chip and a second chip bonded to the first chip. The first chip includes: a substrate; a logic circuit disposed on the substrate; and a plurality of first dummy pads that are disposed above the logic circuit, are disposed on a first bonding surface where the first chip is bonded to the second chip, the plurality of first dummy pads not being electrically connected to the logic circuit. The second chip includes a plurality of second dummy pads disposed on the plurality of first dummy pads and a memory cell array provided above the plurality of second dummy pads. A coverage of the first dummy pads on the first bonding surface is different between a first region and a second region, the first region separated from a first end side of the first chip, the second region disposed between the first end side and the first region.Type: ApplicationFiled: August 19, 2022Publication date: December 15, 2022Applicant: Kioxia CorporationInventor: Shinya ARAI
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Patent number: 11515327Abstract: According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.Type: GrantFiled: March 15, 2021Date of Patent: November 29, 2022Assignee: Kioxia CorporationInventor: Shinya Arai
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Patent number: 11469217Abstract: A semiconductor device includes a first chip and a second chip bonded to the first chip. The first chip includes: a substrate; a logic circuit disposed on the substrate; and a plurality of first dummy pads that are disposed above the logic circuit, are disposed on a first bonding surface where the first chip is bonded to the second chip, the plurality of first dummy pads not being electrically connected to the logic circuit. The second chip includes a plurality of second dummy pads disposed on the plurality of first dummy pads and a memory cell array provided above the plurality of second dummy pads. A coverage of the first dummy pads on the first bonding surface is different between a first region and a second region, the first region separated from a first end side of the first chip, the second region disposed between the first end side and the first region.Type: GrantFiled: August 31, 2020Date of Patent: October 11, 2022Assignee: KIOXIA CORPORATIONInventor: Shinya Arai
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Publication number: 20220320139Abstract: According to one embodiment, a semiconductor memory device includes a substrate; an insulating layer provided on the substrate; a conductive layer provided on the insulating layer; a stacked body provided on the conductive layer and including a plurality of electrode layers and a plurality of insulating layers respectively provided among the plurality of electrode layers; a columnar section piercing through the stacked body to reach the conductive layer and extending in a first direction in which the stacked body is stacked; and a source layer. The columnar section includes a channel body and a charge storage film provided between the channel body and the respective electrode layers. The conductive layer includes a first film having electric conductivity and in contact with the lower end portion of the channel body; and an air gap provided to be covered by the first film.Type: ApplicationFiled: June 24, 2022Publication date: October 6, 2022Applicant: KIOXIA CORPORATIONInventor: Shinya ARAI
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Patent number: 11417679Abstract: According to one embodiment, a semiconductor memory device includes a substrate; an insulating layer provided on the substrate; a conductive layer provided on the insulating layer; a stacked body provided on the conductive layer and including a plurality of electrode layers and a plurality of insulating layers respectively provided among the plurality of electrode layers; a columnar section piercing through the stacked body to reach the conductive layer and extending in a first direction in which the stacked body is stacked; and a source layer. The columnar section includes a channel body and a charge storage film provided between the channel body and the respective electrode layers. The conductive layer includes a first film having electric conductivity and in contact with the lower end portion of the channel body; and an air gap provided to be covered by the first film.Type: GrantFiled: September 3, 2020Date of Patent: August 16, 2022Assignee: Kioxia CorporationInventor: Shinya Arai
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Publication number: 20220173124Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: ApplicationFiled: February 16, 2022Publication date: June 2, 2022Applicant: Kioxia CorporationInventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
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Publication number: 20220115403Abstract: A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Applicant: TOSHIBA MEMORY CORPORATIONInventors: Takayuki MARUYAMA, Yoshiaki FUKUZUMI, Yuki SUGIURA, Shinya ARAI, Fumie KIKUSHIMA, Keisuke SUDA, Takashi ISHIDA
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Patent number: 11296114Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: GrantFiled: June 1, 2021Date of Patent: April 5, 2022Assignee: Kioxia CorporationInventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
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Publication number: 20220084970Abstract: According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.Type: ApplicationFiled: March 2, 2021Publication date: March 17, 2022Inventors: Takahiro TOMIMATSU, Shinya ARAI
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Publication number: 20220085003Abstract: According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.Type: ApplicationFiled: March 2, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Yasunori IWASHITA, Shinya ARAI, Keisuke NAKATSUKA, Takahiro TOMIMATSU, Ryo TANAKA
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Publication number: 20220077089Abstract: According to one embodiment, a semiconductor storage device includes a first chip and a second chip. The first chip includes a first substrate, a transistor, and a first pad. The second chip includes a second pad, a memory cell array, and a second substrate. The second pad is on the first pad. The second chip is bonded to the first chip. The first chip and the second chip includes, when viewed in a first direction orthogonal to the first substrate, a first region and a second region. The first region includes the memory cell array. The second region surrounds an area around the first region and includes a wall extending from the first substrate to the second substrate. The second substrate includes a first opening passing through the second substrate in the second region.Type: ApplicationFiled: March 17, 2021Publication date: March 10, 2022Applicant: Kioxia CorporationInventors: Shinya WATANABE, Shinya ARAI
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Publication number: 20210288073Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: ApplicationFiled: June 1, 2021Publication date: September 16, 2021Applicant: Toshiba Memory CorporationInventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
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Publication number: 20210280603Abstract: A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Applicant: Toshiba Memory CorporationInventors: Jun Fujiki, Shinya Arai, Kotaro Fujii
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Publication number: 20210265314Abstract: A semiconductor device includes a first chip and a second chip bonded to the first chip. The first chip includes: a substrate; a logic circuit disposed on the substrate; and a plurality of first dummy pads that are disposed above the logic circuit, are disposed on a first bonding surface where the first chip is bonded to the second chip, the plurality of first dummy pads not being electrically connected to the logic circuit. The second chip includes a plurality of second dummy pads disposed on the plurality of first dummy pads and a memory cell array provided above the plurality of second dummy pads. A coverage of the first dummy pads on the first bonding surface is different between a first region and a second region, the first region separated from a first end side of the first chip, the second region disposed between the first end side and the first region.Type: ApplicationFiled: August 31, 2020Publication date: August 26, 2021Applicant: Kioxia CorporationInventor: Shinya ARAI