Patents by Inventor Shinya Ishikawa

Shinya Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11114304
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 7, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
  • Patent number: 11086585
    Abstract: To promote appropriate mutual understanding among a plurality of users, an information processing device accepts, as a first instruction, a change instruction for changing a visualization screen that visualizes a model representing preset physical entities, the change instruction including at least one instruction of an index addition instruction, a control change instruction, a display change instruction, and a comment addition instruction. The device displays a visualization screen according to the accepted first instruction on a preset display unit. After the display of the visualization screen corresponding to the first instruction, the device accepts, as a second instruction, at least one instruction of the index addition instruction, the control change instruction, the display change instruction, and the comment addition instruction. When the second instruction has been accepted, the device notifies the fact that the visualization screen has been changed to a preset notification destination.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: August 10, 2021
    Assignee: NS SOLUTIONS CORPORATION
    Inventors: Takashi Mitsubuchi, Masaru Yokoyama, Shinya Ishikawa, Yukimasa Kiya, Yuki Toba
  • Publication number: 20210233778
    Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
    Type: Application
    Filed: January 28, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
  • Publication number: 20210202260
    Abstract: A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of aside wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.
    Type: Application
    Filed: November 19, 2020
    Publication date: July 1, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Shinya ISHIKAWA, Kenta ONO, Masanobu HONDA
  • Publication number: 20210193477
    Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 24, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Shinya ISHIKAWA, Kenta ONO, Maju TOMURA, Masanobu HONDA
  • Publication number: 20210098263
    Abstract: A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 1, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya ISHIKAWA, Toru HISAMATSU
  • Publication number: 20210082713
    Abstract: An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).
    Type: Application
    Filed: September 9, 2020
    Publication date: March 18, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takayuki KATSUNUMA, Masanobu HONDA, Yuta NAKANE, Shinya ISHIKAWA
  • Publication number: 20210005808
    Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current Ic in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
    Type: Application
    Filed: December 14, 2018
    Publication date: January 7, 2021
    Inventors: Hideo SATO, Shinya ISHIKAWA, Shunsuke FUKAMI, Hideo OHNO, Tetsuo ENDOH
  • Publication number: 20200407840
    Abstract: A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.
    Type: Application
    Filed: July 8, 2019
    Publication date: December 31, 2020
    Inventors: Daisuke HAYASHI, Shinya ISHIKAWA
  • Patent number: 10861993
    Abstract: An insulation paste for forming a protective layer of a solar cell device includes: a siloxane resin; an organic solvent; and multiple fillers each having a surface covered with an organic coating containing at least one material different from a material of the siloxane resin. A method for producing the insulation paste includes: preparing the multiple fillers; and mixing together a precursor of the siloxane resin, water, a catalyst, an organic solvent, and the multiple fillers. A method for manufacturing a solar cell device includes: applying the insulation paste to the passivation layer; and drying the insulation paste to form the protective layer on the passivation layer. A solar cell device includes: the passivation layer located on a semiconductor region; and the protective layer located on the passivation layer and including a siloxane resin and dimethylpolysiloxane.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: December 8, 2020
    Assignee: KYOCERA CORPORATION
    Inventors: Shinya Ishikawa, Motoki Shibahara, Satoshi Kitayama, Daisuke Ota, Takashi Koide, Tsuyoshi Kimura
  • Publication number: 20200381265
    Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 3, 2020
    Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
  • Publication number: 20200337538
    Abstract: An oblique-viewing endoscope includes: an endoscope axis that is a longitudinal direction of an endoscope distal end portion; an optical axis of a lens, the optical axis being an observing direction, the endoscope axis and the optical axis being disposed to form a predetermined inclination angle with respect to each other; a rectangular semiconductor package including an imaging sensor configured to convert an optical image formed by the lens to an image signal, and a terminal formed on a back face of the semiconductor package; and a rigid substrate including a semiconductor package mounting area in which the semiconductor package is mounted, an electronic component mounting area in which an electronic component is mounted, and a cable mounting area in which a cable is mounted.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: OLYMPUS CORPORATION
    Inventor: Shinya ISHIKAWA
  • Publication number: 20200326901
    Abstract: To promote appropriate mutual understanding among a plurality of users, an information processing device accepts, as a first instruction, a change instruction for changing a visualization screen that visualizes a model representing preset physical entities, the change instruction including at least one instruction of an index addition instruction, a control change instruction, a display change instruction, and a comment addition instruction. The device displays a visualization screen according to the accepted first instruction on a preset display unit. After the display of the visualization screen corresponding to the first instruction, the device accepts, as a second instruction, at least one instruction of the index addition instruction, the control change instruction, the display change instruction, and the comment addition instruction. When the second instruction has been accepted, the device notifies the fact that the visualization screen has been changed to a preset notification destination.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 15, 2020
    Inventors: Takashi MITSUBUCHI, Masaru Yokoyama, Shinya Ishikawa, Yukimasa Kiya, Yuki Toba
  • Patent number: 10777425
    Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
  • Publication number: 20200243298
    Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.
    Type: Application
    Filed: January 29, 2020
    Publication date: July 30, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daisuke NISHIDE, Toru HISAMATSU, Shinya ISHIKAWA
  • Patent number: 10700166
    Abstract: A nozzle cleaning device is capable of uniformly cleaning a nozzle from a front end of the nozzle to an upper part thereof. The nozzle cleaning device includes a storage tank, a liquid discharging portion and an overflow discharging portion. The storage tank has a cylindrical inner peripheral surface and is configured to store therein a cleaning liquid that cleans a nozzle used in a substrate process. The liquid discharging portion is configured to discharge the cleaning liquid into the storage tank toward a position eccentric with respect to a central axis of the cylindrical inner peripheral surface to store the cleaning liquid within the storage tank and configured to form a vortex flow of the cleaning liquid revolving within the storage tank. The overflow discharging portion is configured to discharge the cleaning liquid that overflows the storage tank.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: June 30, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro Kai, Shinya Ishikawa, Yuji Kamikawa, Shuichi Nagamine, Naoki Shindo
  • Publication number: 20200194257
    Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toru HISAMATSU, Takayuki KATSUNUMA, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200176265
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Application
    Filed: September 9, 2019
    Publication date: June 4, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Toru HISAMATSU, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA, Maju TOMURA, Sho KUMAKURA
  • Patent number: 10651322
    Abstract: A solar cell element comprises a semiconductor substrate, a passivation layer, and first to third electrodes. The passivation layer with first holes is located on the semiconductor substrate. The first electrode is located in each of the first holes and electrically connected to the semiconductor substrate. The second electrode is electrically connected to the first electrode and located on the passivation layer. The third electrodes is electrically connected to the first electrode via the second electrode. The passivation layer includes a part where a ratio of an area occupied by the first holes in a first region adjacent to the third electrodes is smaller than a ratio of an area occupied by the first holes in a second region located farther away from the third electrodes in relation to the first region and having an area equal to an area of the first region in a perspective plan view.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: May 12, 2020
    Assignee: KYOCERA CORPORATION
    Inventor: Shinya Ishikawa
  • Publication number: 20200110257
    Abstract: An imaging unit includes: an optical system including a plurality of lenses; a prism configured to reflect light condensed by the optical system; a semiconductor package including an image sensor configured to generate an electrical signal by receiving light incident from the prism and performing photoelectric conversion on the received light, and including a connection electrode on a back surface of the semiconductor package; and a multi-layer substrate including a connection terminal on a top surface of the multi-layer substrate, the connection electrode being connected to the connection electrode via a conductive member. A concave portion in which an electronic component is mounted is formed in a region on a back surface of the multi-layer substrate, the region corresponding to a region where the connection terminal is formed.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 9, 2020
    Applicant: OLYMPUS CORPORATION
    Inventors: Hiroyuki MOTOHARA, Shinya ISHIKAWA, Toshiyuki SHIMIZU