Shinya Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A driving assistance device mounted in a vehicle operates together with an automated driving control device for automatically controlling steering, acceleration, and deceleration of the vehicle in either of a first state in which a driver is not gripping a steering operation element and a second state in which the driver is gripping the steering operation element, the driving assistance device including a storage medium storing computer-readable instructions and at least one processor connected to the storage medium. The at least one processor makes an operation start condition of a second preliminary operation loose when the automated driving control device is operating in the second state as compared with when the automated driving control device is not operating.
Abstract: At least one processor executes a first preliminary operation control process of notifying that an object is present when an indicator value is less than a second threshold and there is a travel path along which the vehicle is able to travel on one of left and right sides of the object and executes a second preliminary operation control process of notifying a driver when the indicator value is less than a third threshold and there is no travel path on both left and right sides of the object. The second preliminary operation or the first preliminary operation is executed when the indicator value is less than the third threshold, there is a travel path along which the vehicle is able to travel, and it is estimated that there is an interfering object in the travel path on the assumption that the vehicle has approached the object.
Abstract: An image processing apparatus (10) includes an image processing unit (110) and a risk information generation unit (120). The image processing unit (110) acquires and processes an image generated by an image capture apparatus (20), that is, an image including a plurality of persons. As an example, the image processing unit (110) sets a person being at least part of the plurality of persons as a reference person and computes a distance (first distance) between the reference person and the closest person to the reference person. By using the first distance, the risk information generation unit (120) generates infection risk information in a target region being an image capture target of the image capture apparatus (20).
Abstract: An image pickup unit includes: an image pickup substrate; a first wiring plate bonded to the image pickup substrate; and a second wiring plate having a fifth principal surface, a sixth principal surface, and a second side surface, a fifth electrode on the fifth principal surface and a sixth electrode on the second side surface being bonded to a fourth electrode on the fourth principal surface of the first wiring plate by using solder, the sixth electrode being extended from the fifth electrode. A first conductor block is embedded in the second wiring plate, an exposed surface of the first conductor block on the fifth principal surface being the fifth electrode, an exposed surface of the first conductor block on the second side surface being the sixth electrode. The solder bonding the fourth and sixth electrodes forms a fillet.
Abstract: A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.
Abstract: The present invention provides an image processing apparatus (10) that includes: a feature value extraction unit (11) that, by processing an image including a plurality of persons, extracts an external appearance feature value of each of the persons; and a determination unit (12) that, by processing the image, determines another of the persons who satisfies an infection condition between him/her and each of the persons, and registers relevant information relating to the determined another person in association with the external appearance feature value of each of the persons.
Abstract: A substrate support is arranged in a processing container. The substrate support includes an electrostatic chuck provided with a first support surface for supporting a substrate, provided with a first electrode and a second electrode which are arranged in the electrostatic chuck sequentially from the first support surface, and made of a dielectric material, and a base configured to support the electrostatic chuck. The second electrode is arranged at a position having a distance to the first support surface that is equal to or less than a distance to the base. A voltage for attracting the substrate is applied to the first electrode and bias power is supplied to the second electrode.
Abstract: The present invention provides an image processing apparatus (10) including: a companion determination unit (12) that determines a companion of each of a plurality of persons detected from an image, based on the image; a distance computation unit (13) that computes a first distance being a distance to the nearest person among the persons other than a companion, for the each person; and a risk information generation unit (14) that generates, with use of the first distance, infection risk information being information related to a risk of getting an infectious disease or a safety rate of not getting an infectious disease within a target region being a region included in the image.
Abstract: An image processing apparatus includes an image processing unit and a risk information generation unit. By processing at least one image, the image processing unit identifies a caution-requiring location being a location where a proximity indicator being an indicator related to a proximity state between a plurality of persons satisfies a criterion. The risk information generation unit outputs information indicating the caution-requiring location. For example, the information is displayed on a display unit through a display control unit. For each person, the image processing unit computes a first distance being the distance to the closest person to the person. Then, for each of a plurality of locations, the image processing unit counts the number of times the first distance has a reference value or less. Then, the proximity indicator is set by using the number of times the first distance has the reference value or less.
Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
Abstract: A plasma processing apparatus includes: a chamber; a bias power supply that generates an electric bias; a substrate support that supports a substrate and an edge ring in the chamber, and including a first region configured to hold the substrate, a second region provided to surround the first region and hold the edge ring, a first bias electrode provided in the first region to receive the electric bias, a first impedance adjusting electrode provided in the first region to be grounded, a second bias electrode provided in the second region to receive the electric bias, and a second impedance adjusting electrode provided in the second region to be grounded; an impedance adjusting mechanism connected to at least one of the first impedance adjusting electrode and the second impedance adjusting electrode; and an electric path connecting the bias power supply, the first bias electrode, and the second bias electrode.
Abstract: The image pickup unit includes an image pickup device, a substrate, a movable lens drive member, a flexible substrate and a movable lens drive cable, and an image pickup cable. The flexible substrate, the movable lens drive cable, and the image pickup cable are disposed on the substrate.
Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.
Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.
Abstract: A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.
Abstract: There is provided a centrifugally cast composite roll for rolling having excellent wear resistance and surface deterioration resistance at levels of a high-speed steel cast iron roll and having rolling incident resistance at a level of a high alloy grain cast iron roll. Its outer layer includes chemical components by mass ratio: C: 1.5 to 3.5%; Si: 0.3 to 3.0%; Mn: 0.1 to 3.0%; Ni: 1.0 to 6.0%; Cr: 1.5 to 6.0%; Mo: 0.1 to 2.5%; V: 2.0 to 6.0%; Nb: 0.1 to 3.0%; B: 0.001 to 0.2%; N: 0.005 to 0.070%; and the balance being Fe and inevitable impurities, wherein: a chemical composition of the outer layer satisfies Formula (1) and has 5 to 30% of M3C carbide by area ratio; an outer layer Shore hardness (A) of a roll surface satisfies Formula (2); and a residual stress (B) of the roll surface satisfies Formula (3), 2×Ni+0.5×Cr+Mo>10.0??(1) Hs 75?A?Hs 85??(2) 100 MPa?B?350 MPa??(3).
Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.
Abstract: A plasma processing apparatus comprises a plasma processing chamber and a substrate support disposed in the plasma processing chamber. The substrate support includes a base, a ceramic member having a plurality of first vertical holes and a plurality of second vertical holes, at least one annular member, an electrostatic electrode layer, first and second central bias electrode layers, a plurality of first vertical connectors to surround the first vertical hole and to connect the first central bias electrode layer and the second central bias electrode layer, first and second annular bias electrode layers, a plurality of second vertical connectors to surround the second vertical hole and to connect the first annular bias electrode layer and the second annular bias electrode layer.
Abstract: An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).
September 26, 2022
February 23, 2023
Tokyo Electron Limited
Takayuki KATSUNUMA, Masanobu HONDA, Yuta NAKANE, Shinya ISHIKAWA
Abstract: An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using plasma generated from a processing gas. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer. In (b2), the precursor layer is modified by plasma generated from the second gas.