Abstract: A substrate support includes a substrate support portion having an electrostatic chuck for adsorbing a substrate and a substrate heater electrode inside the electrostatic chuck; a ring support supporting an edge ring and having an edge ring heater electrode inside; a base having a central stage on which the substrate support portion is disposed, and an outer peripheral stage on which the ring support is disposed; a first power feeding terminal disposed immediately below the substrate support portion to supply a power to the substrate heater electrode; and a second power feeding terminal disposed immediately below the ring support to supply the power to the edge ring heater electrode. An upper surface of the outer peripheral stage is positioned lower than that of the central stage, and a thickness of the ring support is equal to or larger than 40% of a thickness of the substrate support portion.

Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

Abstract: A user equipment includes a receiving unit configured to receive, from a network node in a VPLMN (Visited Public land mobile network), information indicating a PLMN to be prioritized and information indicating a trigger of PLMN selection; and a control unit configured to execute the PLMN selection, based on the information indicating the PLMN to be prioritized and the information indicating the trigger of the PLMN selection.

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.

Abstract: In 5G cell (230) of 5G system (200), upon detecting that access to the 5G system (200) is barred, the 5G system (200) is congested, 5G core network (220) of the 5G system (200) does not support IMS-type communication service, or fallback to 4G system (300) is instructed, UE (100) selects 4G cell (330) of the 4G system (300) as a target cell for connection. The UE (100) transmits a connection request signal for the IMS-type communication service to the target cell for connection.

Abstract: An information processing device includes a memory, and a processor configured to execute a process. The process includes acquiring a first controller model, the first controller model including information indicating a control condition based on a measurement value, and information indicating a control action defining an action of a control target when the control condition is satisfied; and outputting a second controller model, the second controller model being capable of tolerating a measurement value including a measurement error, wherein the second controller model includes information indicating a control condition based on the information indicating the control condition included in the first controller model, and information indicating a control action based on the information indicating the control condition and the information indicating the control action included in the first controller model.

Abstract: [Object] To provide a technique for controlling a dimension and/or a shape of an opening formed in an etching film. [Solution] A substrate processing method according to the present disclosure includes: preparing a substrate having (a) an etching film, (b) a mask film formed on the etching film and having a sidewall that defines at least one opening on the etching film, and (c) a protective film formed to surround the opening on at least the sidewall of the mask film and containing at least one element selected from the group consisting of boron, phosphorus, sulfur, and tin; and etching the etching film by using the protective film and the mask film as a mask.

Abstract: A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.

Abstract: One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.

Abstract: An adhesive sheet includes a colored adhesive layer of one or more layers comprising a first colorant with the maximum absorption wavelength in the range of 470 nm or more and 530 nm or less and the half width of absorption spectrum is 15 nm or more and 45 nm or less, a second colorant with the maximum absorption wavelength in the range of 560 nm or more and 620 nm or less and the half width of absorption spectrum thereof is 15 nm or more and 55 nm or less, and a third colorant with the wavelength range of 400 nm or more and 780 nm or less, the wavelength with a lowest transmittance is in the range of 650 nm or more and 780 nm or less; and a UV absorbing adhesive layer on the surface of the colored adhesive layer with a UV shielding rate of 85%.

Abstract: An optical film includes a transparent substrate in which an ultraviolet shielding rate is 85% or more, and a colored layer containing a colorant. The colored layer includes one or more layers containing a first colorant material in which a maximum absorption wavelength is 470 nm or more and 530 nm or less and a half width of an absorption spectrum thereof is 15 nm or more and 45 nm or less, a second colorant material in which a maximum absorption wavelength is 560 nm or more and 620 nm or less and a half width of an absorption spectrum thereof is 15 nm or more and 55 nm or less, and a third colorant material in which a wavelength in a wavelength range of 400 nm to 780 nm at which a transmittance is lowest is in a range of 650 nm or more and 780 nm or less.

Abstract: An optical film includes a transparent substrate, a colored layer including one or more layers that contain a first colorant material with a maximum absorption wavelength of 470 nm or more and 530 nm or less and a half width of an absorption spectrum of 15 nm or more and 45 nm or less, a second colorant material with a maximum absorption wavelength of 560 nm or more and 620 nm or less and a half width of an absorption spectrum of 15 nm or more and 55 nm or less, and a third colorant material with a wavelength range of 400 nm to 780 nm, a wavelength with a transmittance in a range of 650 nm or more and 780 nm or less, and one or more functional layers facing a surface of the colored layer opposite the transparent substrate, with an ultraviolet absorption layer.

Abstract: An electronic device inputs a voltage from each of a first and a second constant voltage sources, amplifies the inputted voltage, and converts the inputted voltage or a voltage amplified by an amplifier into a digital value. Using a first and a second digital values based on the inputted voltage, and a third and fourth digital values based on the inputted, amplified and converted voltage, an amplification factor of the amplifier and an offset voltage of the amplifier are calculated, and the amplifier is corrected based on the calculated amplification factor and offset voltage.

Abstract: The optical sheet includes: a first adhesive layer containing an adhesive and a colorant, the first adhesive layer having opposite first and second surfaces; and an ultraviolet shielding layer arranged to face the first surface. The colorant contains at least one of a first coloring material having a maximum absorption wavelength in a range of 470 to 530 nm and an absorption spectral half width of 15 to 45 nm, a second coloring material having a maximum absorption wavelength in a range of 560 to 620 nm and an absorption spectral half width of 15 to 55 nm, and a third coloring material in which a wavelength having the lowest transmittance in a wavelength range of 400 to 800 nm is in a range of 650 to 800 nm. The ultraviolet shielding layer has an ultraviolet shielding rate of 85% or more. ?E * ab.

Abstract: An ink jet printing apparatus comprises a controller and a printhead control unit positioned between the controller and the printhead and configured to control the printhead upon an instruction from the controller. The controller comprises a control unit configured to, in a case where transmission of an instruction to the printhead control unit failed, if the instruction is an instruction included in a first communication sequence performed periodically with respect to the printhead control unit in order to control the printhead, not execute a retry of the failed instruction, and in a case where the instruction is an instruction included in a second communication sequence performed aperiodically with respect to the printhead control unit in order to control the printhead, retry the failed instruction.

Abstract: An image pickup unit includes: an image pickup substrate; a first wiring plate bonded to the image pickup substrate; and a second wiring plate having a fifth principal surface, a sixth principal surface, and a second side surface, a fifth electrode on the fifth principal surface and a sixth electrode on the second side surface being bonded to a fourth electrode on the fourth principal surface of the first wiring plate by using solder, the sixth electrode being extended from the fifth electrode. A first conductor block is embedded in the second wiring plate, an exposed surface of the first conductor block on the fifth principal surface being the fifth electrode, an exposed surface of the first conductor block on the second side surface being the sixth electrode. The solder bonding the fourth and sixth electrodes forms a fillet.

Abstract: A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.

Abstract: A substrate support is arranged in a processing container. The substrate support includes an electrostatic chuck provided with a first support surface for supporting a substrate, provided with a first electrode and a second electrode which are arranged in the electrostatic chuck sequentially from the first support surface, and made of a dielectric material, and a base configured to support the electrostatic chuck. The second electrode is arranged at a position having a distance to the first support surface that is equal to or less than a distance to the base. A voltage for attracting the substrate is applied to the first electrode and bias power is supplied to the second electrode.