Abstract: A substrate support includes a substrate support portion having an electrostatic chuck for adsorbing a substrate and a substrate heater electrode inside the electrostatic chuck; a ring support supporting an edge ring and having an edge ring heater electrode inside; a base having a central stage on which the substrate support portion is disposed, and an outer peripheral stage on which the ring support is disposed; a first power feeding terminal disposed immediately below the substrate support portion to supply a power to the substrate heater electrode; and a second power feeding terminal disposed immediately below the ring support to supply the power to the edge ring heater electrode. An upper surface of the outer peripheral stage is positioned lower than that of the central stage, and a thickness of the ring support is equal to or larger than 40% of a thickness of the substrate support portion.

Abstract: There is provided a centrifugally cast composite roll for rolling having excellent wear resistance and surface deterioration resistance at levels of a high-speed steel cast iron roll and having rolling incident resistance at a level of a high alloy grain cast iron roll. A centrifugally cast composite roll for rolling having an outer layer and an inner layer, the outer layer including chemical components by mass ratio: C: 1.0 to 3.0%; Si: 0.3 to 3.0%; Mn: 0.1 to 3.0%; Ni: 0.1 to 6.0%; Cr: 0.5 to 6.0%; Mo: 0.5 to 6.0%; V: 3.0 to 7.0%; Nb: 0.1 to 3.0%; B: 0.001 to 0.1%; N: 0.005 to 0.070%; and the balance being Fe and inevitable impurities, wherein: the chemical composition of the outer layer satisfies following Formula (1), has a crystallization and precipitation amount of graphite suppressed to less than 0.

Abstract: There is provided a centrifugally cast composite roll for rolling having excellent wear resistance and surface deterioration resistance at levels of a high-speed steel cast iron roll and having rolling incident resistance at a level of a high alloy grain cast iron roll. Its outer layer includes chemical components by mass ratio: C: 1.5 to 3.5%; Si: 0.3 to 3.0%; Mn: 0.1 to 3.0%; Ni: 1.0 to 6.0%; Cr: 1.5 to 6.0%; Mo: 0.1 to 2.5%; V: 2.0 to 6.0%; Nb: 0.1 to 3.0%; B: 0.001 to 0.2%; N: 0.005 to 0.070%; and the balance being Fe and inevitable impurities, wherein: a chemical composition of the outer layer satisfies Formula (1) and has 5 to 30% of M3C carbide by area ratio; an outer layer Shore hardness (A) of a roll surface satisfies Formula (2); and a residual stress (B) of the roll surface satisfies Formula (3), 2×Ni+0.5×Cr+Mo>10.0??(1) Hs 75?A?Hs 85??(2) 100 MPa?B?350 MPa??(3).

Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

Abstract: An oblique-viewing endoscope includes: an endoscope axis that is a longitudinal direction of an endoscope distal end portion; an optical axis of a lens, the optical axis being an observing direction, the endoscope axis and the optical axis being disposed to form a predetermined inclination angle with respect to each other; a rectangular semiconductor package including an imaging sensor configured to convert an optical image formed by the lens to an image signal, and a terminal formed on a back face of the semiconductor package; and a rigid substrate including a semiconductor package mounting area in which the semiconductor package is mounted, an electronic component mounting area in which an electronic component is mounted, and a cable mounting area in which a cable is mounted.

Abstract: A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of a side wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

Abstract: An ink jet printing apparatus comprises a controller and a printhead control unit positioned between the controller and the printhead and configured to control the printhead upon an instruction from the controller. The controller comprises a control unit configured to, in a case where transmission of an instruction to the printhead control unit failed, if the instruction is an instruction included in a first communication sequence performed periodically with respect to the printhead control unit in order to control the printhead, not execute a retry of the failed instruction, and in a case where the instruction is an instruction included in a second communication sequence performed aperiodically with respect to the printhead control unit in order to control the printhead, retry the failed instruction.

Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

Abstract: An electronic device inputs a voltage from each of a first and a second constant voltage sources, amplifies the inputted voltage, and converts the inputted voltage or a voltage amplified by an amplifier into a digital value. Using a first and a second digital values based on the inputted voltage, and a third and fourth digital values based on the inputted, amplified and converted voltage, an amplification factor of the amplifier and an offset voltage of the amplifier are calculated, and the amplifier is corrected based on the calculated amplification factor and offset voltage.

Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

Abstract: Provided is a high-strength, heat-resistant, Ni-base alloy comprising Co: from 5 to 12%, Cr: from 5 to 12%, Mo: from 0.5 to 3.0%, W: from 3.0 to 6.0%, Al: from 5.5 to 7.2%, Ti: from 1.0 to 3.0%, Ta: from 1.5 to 6.0%, Re: from 0 to 2.0%, and C: from 0.01 to 0.20%. The high-strength, heat-resistant, Ni-base alloy is constituted of a Ni-based alloy, the balance of the Ni-based alloy comprising Ni and inevitable impurities. The density of the high-strength, heat-resistant Ni-base alloy is less than 8.5 g/cm3.

Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.

Abstract: To promote appropriate mutual understanding among a plurality of users, an information processing device accepts, as a first instruction, a change instruction for changing a visualization screen that visualizes a model representing preset physical entities, the change instruction including at least one instruction of an index addition instruction, a control change instruction, a display change instruction, and a comment addition instruction. The device displays a visualization screen according to the accepted first instruction on a preset display unit. After the display of the visualization screen corresponding to the first instruction, the device accepts, as a second instruction, at least one instruction of the index addition instruction, the control change instruction, the display change instruction, and the comment addition instruction. When the second instruction has been accepted, the device notifies the fact that the visualization screen has been changed to a preset notification destination.

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

Abstract: A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of aside wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.

Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

Abstract: A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.