Abstract: An electronic device inputs a voltage from each of a first and a second constant voltage sources, amplifies the inputted voltage, and converts the inputted voltage or a voltage amplified by an amplifier into a digital value. Using a first and a second digital values based on the inputted voltage, and a third and fourth digital values based on the inputted, amplified and converted voltage, an amplification factor of the amplifier and an offset voltage of the amplifier are calculated, and the amplifier is corrected based on the calculated amplification factor and offset voltage.

Abstract: The optical sheet includes: a first adhesive layer containing an adhesive and a colorant, the first adhesive layer having opposite first and second surfaces; and an ultraviolet shielding layer arranged to face the first surface. The colorant contains at least one of a first coloring material having a maximum absorption wavelength in a range of 470 to 530 nm and an absorption spectral half width of 15 to 45 nm, a second coloring material having a maximum absorption wavelength in a range of 560 to 620 nm and an absorption spectral half width of 15 to 55 nm, and a third coloring material in which a wavelength having the lowest transmittance in a wavelength range of 400 to 800 nm is in a range of 650 to 800 nm. The ultraviolet shielding layer has an ultraviolet shielding rate of 85% or more. ?E * ab.

Abstract: An ink jet printing apparatus comprises a controller and a printhead control unit positioned between the controller and the printhead and configured to control the printhead upon an instruction from the controller. The controller comprises a control unit configured to, in a case where transmission of an instruction to the printhead control unit failed, if the instruction is an instruction included in a first communication sequence performed periodically with respect to the printhead control unit in order to control the printhead, not execute a retry of the failed instruction, and in a case where the instruction is an instruction included in a second communication sequence performed aperiodically with respect to the printhead control unit in order to control the printhead, retry the failed instruction.

Abstract: An image pickup unit includes: an image pickup substrate; a first wiring plate bonded to the image pickup substrate; and a second wiring plate having a fifth principal surface, a sixth principal surface, and a second side surface, a fifth electrode on the fifth principal surface and a sixth electrode on the second side surface being bonded to a fourth electrode on the fourth principal surface of the first wiring plate by using solder, the sixth electrode being extended from the fifth electrode. A first conductor block is embedded in the second wiring plate, an exposed surface of the first conductor block on the fifth principal surface being the fifth electrode, an exposed surface of the first conductor block on the second side surface being the sixth electrode. The solder bonding the fourth and sixth electrodes forms a fillet.

Abstract: A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.

Abstract: A substrate support is arranged in a processing container. The substrate support includes an electrostatic chuck provided with a first support surface for supporting a substrate, provided with a first electrode and a second electrode which are arranged in the electrostatic chuck sequentially from the first support surface, and made of a dielectric material, and a base configured to support the electrostatic chuck. The second electrode is arranged at a position having a distance to the first support surface that is equal to or less than a distance to the base. A voltage for attracting the substrate is applied to the first electrode and bias power is supplied to the second electrode.

Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

Abstract: A plasma processing apparatus includes: a chamber; a bias power supply that generates an electric bias; a substrate support that supports a substrate and an edge ring in the chamber, and including a first region configured to hold the substrate, a second region provided to surround the first region and hold the edge ring, a first bias electrode provided in the first region to receive the electric bias, a first impedance adjusting electrode provided in the first region to be grounded, a second bias electrode provided in the second region to receive the electric bias, and a second impedance adjusting electrode provided in the second region to be grounded; an impedance adjusting mechanism connected to at least one of the first impedance adjusting electrode and the second impedance adjusting electrode; and an electric path connecting the bias power supply, the first bias electrode, and the second bias electrode.

Abstract: The image pickup unit includes an image pickup device, a substrate, a movable lens drive member, a flexible substrate and a movable lens drive cable, and an image pickup cable. The flexible substrate, the movable lens drive cable, and the image pickup cable are disposed on the substrate.

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

Abstract: A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.

Abstract: There is provided a centrifugally cast composite roll for rolling having excellent wear resistance and surface deterioration resistance at levels of a high-speed steel cast iron roll and having rolling incident resistance at a level of a high alloy grain cast iron roll. Its outer layer includes chemical components by mass ratio: C: 1.5 to 3.5%; Si: 0.3 to 3.0%; Mn: 0.1 to 3.0%; Ni: 1.0 to 6.0%; Cr: 1.5 to 6.0%; Mo: 0.1 to 2.5%; V: 2.0 to 6.0%; Nb: 0.1 to 3.0%; B: 0.001 to 0.2%; N: 0.005 to 0.070%; and the balance being Fe and inevitable impurities, wherein: a chemical composition of the outer layer satisfies Formula (1) and has 5 to 30% of M3C carbide by area ratio; an outer layer Shore hardness (A) of a roll surface satisfies Formula (2); and a residual stress (B) of the roll surface satisfies Formula (3), 2×Ni+0.5×Cr+Mo>10.0??(1) Hs 75?A?Hs 85??(2) 100 MPa?B?350 MPa??(3).

Abstract: A plasma processing apparatus comprises a plasma processing chamber and a substrate support disposed in the plasma processing chamber. The substrate support includes a base, a ceramic member having a plurality of first vertical holes and a plurality of second vertical holes, at least one annular member, an electrostatic electrode layer, first and second central bias electrode layers, a plurality of first vertical connectors to surround the first vertical hole and to connect the first central bias electrode layer and the second central bias electrode layer, first and second annular bias electrode layers, a plurality of second vertical connectors to surround the second vertical hole and to connect the first annular bias electrode layer and the second annular bias electrode layer.

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

Abstract: An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).

Abstract: An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using plasma generated from a processing gas. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer. In (b2), the precursor layer is modified by plasma generated from the second gas.

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

Abstract: In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.