Abstract: A semiconductor device comprises a conductive layer, a first insulating film, a barrier metal, a contact electrode, and a surface electrode. The first insulating film is located on the conductive layer and comprises a contact hole reaching the conductive layer. At least a surface part of the first insulating film is a BPSG film. The barrier metal covers an inner surface of the contact hole. The contact electrode is located in the contact hole and on the barrier metal. The surface electrode is located on the BPSG film and the contact electrode. The barrier metal is not interposed between the BPSG film and the surface electrode so that the surface electrode is directly in contact with the BPSG film. At least a part of the surface electrode is a bonding pad.

Abstract: There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer.

Abstract: Disclosed herein is a semiconductor device which includes a semiconductor substrate and a trench gate. The semiconductor substrate includes a drift layer, a body layer, and a first semiconductor layer provided on a part of a front surface of the body layer. The trench gate extends from a front surface of the semiconductor substrate to reach the drift layer. The trench gate includes a gate insulating film and a gate electrode. The inner wall of the trench, which is located at a depth where the inner wall makes contact with the body layer, is a crystal plane. A width of the trench in a transverse direction includes a width located at the front surface of the semiconductor substrate that is narrower than a width located at a depth from a lower end of the first semiconductor layer to a lower end of the body layer.

Abstract: There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer.

Abstract: A conductor connection tool includes a terminal platform base, a conduction fitting accommodated in a fitting recessed part of the terminal platform base. The conduction fitting is formed in a substantially U shape and includes a bottom plate portion, a vertical portion bent vertically upward from one end of the bottom plate portion, and an attachment portion extending from an upper end of the vertical portion in parallel to the bottom plate portion, and having a terminal portion extending in the opposite direction to the attachment portion. A plate spring bent in a substantially V shape with one side serving as an attachment piece to be fixed to the attachment portion of the conduction fitting with the other side serving as a locking piece whose front end is to be brought into pressure contact with the bottom plate portion of the conduction fitting.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: A drug and a composition for inhibiting biofilm formation are provided. A biofilm formation inhibitor composition containing the following component (A): (A) at least one or more selected from compounds represented by Formula (1) to Formula (4): wherein R1 to R5 each represent an alkyl group or the like; EO represents an ethyleneoxy group; p represents an integer from 0 to 5; and m+n represents a number from 0 to 30, or a salt thereof; and (B) a surfactant.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.

Abstract: A conductor connection tool includes a terminal platform base, a conduction fitting accommodated in a fitting recessed part of the terminal platform base. The conduction fitting is formed in a substantially U shape and includes a bottom plate portion, a vertical portion bent vertically upward from one end of the bottom plate portion, and an attachment portion extending from an upper end of the vertical portion in parallel to the bottom plate portion, and having a terminal portion extending in the opposite direction to the attachment portion. A plate spring bent in a substantially V shape with one side serving as an attachment piece to be fixed to the attachment portion of the conduction fitting with the other side serving as a locking piece whose front end is to be brought into pressure contact with the bottom plate portion of the conduction fitting.

Abstract: A processing unit executes a process for creating a dedicated color palette (color palette dedicated for a palm vein GUI) as an initialization process, and creates the color palette dedicated for a palm vein GUI. The processing unit replaces a 256-level gradation grayscale palette set in an acquired photographed image with the color palette dedicated for the palm vein GUI. The processing unit performs guide GUI display for guiding a palm to an appropriate position, using a display image formed by setting the color palette dedicated for the palm vein GUI for the photographed image acquired from a photographed image-acquiring process.

Abstract: In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.

Abstract: A biometrics authentication device which detects body characteristics, performs verification against registered biometrics data, and performs individual authentication, by which confidentiality is improved even when biometrics data is separated, distributed and stored. A biometrics information key is created from biometrics data detected by a detection device, the biometrics data is divided into a plurality of portions, and the portions are stored on different media. The biometrics information key is stored on one media, and at the time of authentication, the separated biometrics data portions are combined and a biometrics information key is created and is compared with the biometrics information key, to judge the linked relationship. Hence confidentiality of the association of the individual separated data portions can be improved even when the biometrics data is separated, distributed and stored, contributing to prevent illicit use resulting from leakage or theft of biometrics data.

Abstract: A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.

Abstract: Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.

Abstract: A processing unit executes a process for creating a dedicated color palette (color palette dedicated for a palm vein GUI) as an initialization process, and creates the color palette dedicated for a palm vein GUI. The processing unit replaces a 256-level gradation grayscale palette set in an acquired photographed image with the color palette dedicated for the palm vein GUI. The processing unit performs guide GUI display for guiding a palm to an appropriate position, using a display image formed by setting the color palette dedicated for the palm vein GUI for the photographed image acquired from a photographed image-acquiring process.

Abstract: A biometrics authentication device identifies characteristics of the body from captured images of the body and performs individual authentication. The device guides a user, at the time of verification, to the image capture state at the time of registration of biometrics characteristic data. At the time of registration of biometrics characteristic data, body image capture state data is extracted from an image captured by an image capture unit and is registered in a storage unit, and at the time of verification the registered image capture state data is read from the storage unit and is compared with image capture state data extracted at the time of verification, and guidance of the body is provided. Alternatively, an outline of the body at the time of registration, taken from image capture state data at the time of registration, is displayed.

Abstract: Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles.