Patents by Inventor Shiro Yamazaki

Shiro Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6472690
    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semic
    Type: Grant
    Filed: October 2, 2000
    Date of Patent: October 29, 2002
    Assignees: Toyoda Gosei Co., Ltd., Nagoya University, Japan Science and Technology Corporation
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Publication number: 20020060326
    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-x
    Type: Application
    Filed: January 23, 2002
    Publication date: May 23, 2002
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Patent number: 6362017
    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semic
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: March 26, 2002
    Assignees: Toyoda Gosei Co., Ltd., Nagoya University, Japan Science and Technology Corporation
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Publication number: 20010019849
    Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).
    Type: Application
    Filed: February 15, 2001
    Publication date: September 6, 2001
    Applicant: TOTODA GOSEI CO. LTD.
    Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
  • Patent number: 6265726
    Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: July 24, 2001
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
  • Patent number: 6249012
    Abstract: A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.
    Type: Grant
    Filed: October 23, 1997
    Date of Patent: June 19, 2001
    Assignees: Toyoda Gosei Co., Ltd., Nagoya University, Japan Science and Technology Corporation
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Patent number: 6083535
    Abstract: An effervescent granular preparation for keeping cut flower freshness includes an azole-substituted cyclopentanol derivative represented by formula (I) (set forth below) and 2-bromo-2-nitro-1, 3-propanediol as effective components and to a process for producing the same. The effervescent granular preparation is produced by granulation of a mixture containing at least one of glucose, D-mannitol and sucrose as an excipient by incorporating an organic acid such as citric acid or malic acid and a hydrogen carbonate such as sodium hydrogen carbonate. ##STR1## wherein A represents a nitrogen atom or a CH group, R.sup.1 and R.sup.2 represent each independently a hydrogen or a C.sub.1 -C.sub.3 alkyl group, and X represents a hydrogen atom or a halogen atom.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: July 4, 2000
    Assignee: Kureha Kagaku Kogyo K.K.
    Inventors: Tadahiko Chiba, Shiro Yamazaki, Toshihide Saishoji
  • Patent number: 6005258
    Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.
    Type: Grant
    Filed: February 26, 1997
    Date of Patent: December 21, 1999
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
  • Patent number: 5897509
    Abstract: A probe for measuring a depth of a periodontal pocket includes an emitting device for emitting, from a position at a distance from the periodontal pocket, a light beam toward the periodontal pocket, a receiving device for receiving, at a position at another distance from the periodontal pocket, the light beam after being reflected on a bottom of the periodontal pocket, and an analyzing device for displaying the depth of the periodontal pocket after a calculation thereof on the basis of an analysis of the light beam received at the receiving device.
    Type: Grant
    Filed: June 23, 1997
    Date of Patent: April 27, 1999
    Assignee: Aisin Seiki Kabushiki Kaisha
    Inventors: Masataka Toda, Hiroyuki Suganuma, Shiro Yamazaki, Koji Kuno
  • Patent number: 5862167
    Abstract: A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
    Type: Grant
    Filed: May 27, 1997
    Date of Patent: January 19, 1999
    Assignees: Toyoda Gosei Co., Ltd., Research Development Corporation of Japan, Isamu Akasaki, Hiroshi Amano
    Inventors: Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Junichi Umezaki, Naoki Shibata, Masayoshi Koike, Isamu Akasaki, Hiroshi Amano
  • Patent number: 5733796
    Abstract: A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.
    Type: Grant
    Filed: November 9, 1995
    Date of Patent: March 31, 1998
    Assignees: Toyoda Gosei Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagoya University, Research Development Corporation of Japan
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Patent number: 5700713
    Abstract: A light-emitting semiconductor device a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Mg doped ((Al.sub.x1 Ga.sub.1-x1).sub.y2 In.sub.1-y2 N n.sup.+ -layer (5), and a Mg doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) has about a 2.0 .mu.m thickness and a 2.times.10.sup.18 /cm.sup.3 electron concentration. A double i-layer structure includes the emission layer (5) and the i-layer (6). The emission layer (5) has about a 0.5 .mu.m thickness, and the i-layer (6) has about a 0.5 .mu.m thickness. Parts of the emission layer (5) and the i-layer (6) are p-type regions (50, 60).
    Type: Grant
    Filed: March 20, 1995
    Date of Patent: December 23, 1997
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shiro Yamazaki, Naoki Shibata, Masayoshi Koike
  • Patent number: 5587593
    Abstract: A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" <1120>, and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
    Type: Grant
    Filed: April 19, 1995
    Date of Patent: December 24, 1996
    Assignees: Toyoda Gosei Co., Ltd., Research Development Corporation of Japan
    Inventors: Norikatsu Koide, Shiro Yamazaki, Junichi Umezaki, Shinya Asami
  • Patent number: 5583879
    Abstract: A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).
    Type: Grant
    Filed: April 19, 1995
    Date of Patent: December 10, 1996
    Assignees: Toyoda Gosei Co., Ltd., Research Development, Isamu Akasaki, Hiroshi Amano
    Inventors: Shiro Yamazaki, Norikatsu Koide, Katsuhide Manabe, Isamu Akasaki, Hiroshi Amano
  • Patent number: 5362885
    Abstract: Disclosed herein are N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives of the formula (I): ##STR1## R.sup.1 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives as active ingredients.
    Type: Grant
    Filed: June 25, 1993
    Date of Patent: November 8, 1994
    Assignee: Kureha Kagaku Kogyo K.K.
    Inventors: Hideo Arabori, Shiro Yamazaki, Masato Arahira, Aiko Murakami
  • Patent number: 5278433
    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.
    Type: Grant
    Filed: August 7, 1992
    Date of Patent: January 11, 1994
    Assignees: Toyoda Gosei Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagoya University, Research Development Corporation of Japan
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hashimoto, Isamu Akasaki
  • Patent number: 5242894
    Abstract: Disclosed herein are N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives of the formula (I): ##STR1## R.sup.1 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 is alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives as active ingredients.
    Type: Grant
    Filed: April 21, 1992
    Date of Patent: September 7, 1993
    Assignee: Kureha Kagaku Kogyo K.K.
    Inventors: Hideo Arahori, Shiro Yamazaki, Masato Arahira, Aiko Murakami
  • Patent number: 5198566
    Abstract: Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 and CF.sub.3, COOH or CCl=CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.
    Type: Grant
    Filed: June 3, 1992
    Date of Patent: March 30, 1993
    Assignee: Kureha Kagaku Kogyo K.K.
    Inventors: Hideo Arabori, Shiro Yamazaki, Masato Arahira, Aiko Murakami
  • Patent number: 5162583
    Abstract: Disclosed herein are the derivative of benzyl ether represented by the formula (I) ##STR1## which is useful as an intermediate compound of the derivatives of 1,5-diphenyl-1H-1,2,4- triazole-3-carboxamide represented by the formula (II), ##STR2## wherein R is a straight-chain alkyl group having 1 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a branched alkyl group having 3 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a cyclic alkyl group having 3 to 10 carbon atoms, an alkyl group having 1 to 3 carbon atoms which is substituted with an alicyclic structure having 3 to 7 carbon atoms, a phenyl group or an aralkyl group having 7 to 9 carbon atoms; X.sup.1 is a halogen or an alkyl group having 1 to 3 carbon atoms; X.sup.2 is a hydrogen, a halogen or an alkyl group having 1 to 3 carbon atoms; Y.sup.1 is a hydrogen or a fluorine; Y.sup.2 is a hydrogen or a fluorine; and Z is a nitro group or an amino group.
    Type: Grant
    Filed: September 27, 1990
    Date of Patent: November 10, 1992
    Assignee: Kureha Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takafumi Shida, Hideo Arabori, Takeo Watanabe, Yoshikazu Kubota, Isao Ichinose, Yoichi Kanda, Shiro Yamazaki, Hiroyasu Shinkawa
  • Patent number: 5151114
    Abstract: Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 is CF.sub.3, COOH or CCl.dbd.CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: September 29, 1992
    Inventors: Hideo Arahori, Shiro Yamazaki, Masato Arahira, Aiko Murakami