Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: The present invention discloses a Fe—Al intermetallic compound filter element and a preparation method thereof, which relates to the field of powder metallurgy and filtration technology. In view of the drawback in the prior art that using a fiber felt as a filtration layer reduces stability and reliability of a filter, the present invention provides an Fe—Al intermetallic compound filter element, which comprises: at least two filter-element parts, and a rebar connecting the at least two filter-element parts transversely by means of welding, wherein, the filter-element parts each comprises at least two segments of Fe—Al intermetallic compound filter-element powder tube and a connector connecting the at least two segments of Fe—Al intermetallic compound filter-element powder tube end-to-end by means of welding; and wherein, the at least two segments of Fe—Al intermetallic compound filter-element powder tube each comprises a substrate framework and a surface filtration membrane.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

Abstract: The present disclosure provides an array substrate, a liquid crystal display panel and a liquid crystal display device, including: a base substrate; gate lines each extending in a first direction on the base substrate; data lines each extending in a second direction intersecting the first direction; pixel units located in regions defined by the gate lines and the data lines; each pixel unit has a first side and a second side each extending in the second direction and opposite to each other in the first direction; each pixel unit includes a first electrode including a plurality of strip-shaped electrodes, at least part of the strip-shaped electrodes each have a first part and a second part extending in different directions, first parts are connected at the first side, second parts are disconnected at the second side, and lengths of the first part and the second part are different.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).

Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).

Abstract: Network traffic is monitored to coordinate control of data flows. Data flows between sender hosts and a receiver host are identified. A first data flow and a second data flow have respective priorities. Delay thresholds are assigned to the first data flow and second data flow based on their respective priorities. One-way delays of data packets of the first and second data flows are monitored relative to the assigned delay thresholds. Responsive to determining that the one-way delay of the first data flow's data packets exceed a first delay threshold, transmissions of the first data flow's data packets are paused for a first amount of time. Responsive to determining that the one-way delay of the second data flow's data packets exceed a second delay threshold, transmissions of the second data flow's packets are paused for a second amount of time that exceeds the first amount of time.

Abstract: Network traffic is monitored to coordinate control of data flows and detect anomalies. For a data flow transmitted between sender and receiver hosts, pre-defined amounts of sent and received network traffic of the data flow is recorded. The data flow is monitored, based on time stamps of data packets in the network traffic, for an anomaly. Responsive to determining that no anomaly is detected, the recorded sent and received network traffic is overwritten with newly sent and newly received network traffic, respectively. Responsive to determining that an anomaly is detected, the data flow is paused, which causes the sender host to store the recorded sent network traffic to a first buffer and causes the receiver host the store the recorded received network traffic to a second buffer.

Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a trilayer on the second side of the substrate, the trilayer including a first layer on the second side of the substrate, a second layer on the first layer and a third layer on the second layer. In some embodiments, separately from or in addition to the trilayer the mask blank includes an etch stop layer between the absorber layer and the capping layer, and there is a hard mask layer on the absorber layer.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).

Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C.