Abstract: The present disclosure relates to a half-cast mark identification and damaged flatness evaluation and classification method for blastholes in tunnel blasting, including the following steps: S1-2: photographing first and second contrast images as well as a half-cast mark image after blasting; S3-6: performing denoising, gray-scale processing and binary processing on the above images, and identifying a boundary of a half-cast mark in each of the images; S7-9: determining a flatness damage variable, a quantitative relation among an area of a half-cast mark region, the damage variable and a fractal dimension, and a damage value of the half-cast mark image; S10-11: forming five-dimensional (5D) eigenvectors to obtain multi-dimensional digital information features of the images; and S12-13: selecting eigenvectors of 60 images as training data to input to a naive Bayes classifier (NBC), and taking eigenvectors of remaining 30 images as classification data to input the above well-trained NBC for classification.

Abstract: A jump starter device with a diagnostic function can include a jump starter section for jump start a vehicle, and a diagnostic section for diagnose a condition of the vehicle. The diagnostic section can include an analysis of the measured battery voltage. The diagnostic section can include a circuit to determine an internal resistance of the battery. The diagnostic section can include a circuit to determine a current of the vehicle.

Abstract: A regular buffer and a shadow buffer are maintained at a receiver host. Responsive to receiving a data flow from a sender host that is clock-synchronized with the receiver host using a common reference clock, a first indication of data of the data flow is stored to the regular buffer, the shadow buffer is transitioned from an idle state to an active state, and a counter of the shadow buffer is incremented that indicates a unit of data traffic received. A dynamic drain rate is determined based on a number of units of the data removed from the regular buffer per unit of time while the shadow buffer is in the active state, where the shadow buffer reverts to an idle state responsive to a break in the receiver host receiving the data flow. Dwell time is calculated as a function of the counter of the shadow buffer and the dynamic drain rate, and a congestion signal for the data flow is determined based on the dwell time.

Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).

Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).

Abstract: Network traffic is monitored to coordinate control of data flows and detect anomalies. For a data flow transmitted between sender and receiver hosts, pre-defined amounts of sent and received network traffic of the data flow is recorded. The data flow is monitored, based on time stamps of data packets in the network traffic, for an anomaly. Responsive to determining that no anomaly is detected, the recorded sent and received network traffic is overwritten with newly sent and newly received network traffic, respectively. Responsive to determining that an anomaly is detected, the data flow is paused, which causes the sender host to store the recorded sent network traffic to a first buffer and causes the receiver host the store the recorded received network traffic to a second buffer.

Abstract: Network traffic is monitored to coordinate control of data flows. Data flows between sender hosts and a receiver host are identified. A first data flow and a second data flow have respective priorities. Delay thresholds are assigned to the first data flow and second data flow based on their respective priorities. One-way delays of data packets of the first and second data flows are monitored relative to the assigned delay thresholds. Responsive to determining that the one-way delay of the first data flow's data packets exceed a first delay threshold, transmissions of the first data flow's data packets are paused for a first amount of time. Responsive to determining that the one-way delay of the second data flow's data packets exceed a second delay threshold, transmissions of the second data flow's packets are paused for a second amount of time that exceeds the first amount of time.

Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a trilayer on the second side of the substrate, the trilayer including a first layer on the second side of the substrate, a second layer on the first layer and a third layer on the second layer. In some embodiments, separately from or in addition to the trilayer the mask blank includes an etch stop layer between the absorber layer and the capping layer, and there is a hard mask layer on the absorber layer.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).