Patents by Inventor Shiyu Liu

Shiyu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11592738
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: February 28, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20230026591
    Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.
    Type: Application
    Filed: October 31, 2021
    Publication date: January 26, 2023
    Inventors: Bing Liu, Shiyu Liu
  • Patent number: 11545842
    Abstract: A jump starter device can include sensors to measure data of a vehicle coupled to the jump starter device. The jump starter device can include a controller configured to process the load data to determine the status of the load, such as the conditions of the vehicle connected to the jump starter.
    Type: Grant
    Filed: October 31, 2021
    Date of Patent: January 3, 2023
    Inventors: Bing Liu, Shiyu Liu
  • Patent number: 11513437
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal
  • Publication number: 20220350233
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).
    Type: Application
    Filed: May 3, 2021
    Publication date: November 3, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20220345412
    Abstract: Network traffic is monitored to coordinate control of data flows. Data flows between sender hosts and a receiver host are identified. A first data flow and a second data flow have respective priorities. Delay thresholds are assigned to the first data flow and second data flow based on their respective priorities. One-way delays of data packets of the first and second data flows are monitored relative to the assigned delay thresholds. Responsive to determining that the one-way delay of the first data flow's data packets exceed a first delay threshold, transmissions of the first data flow's data packets are paused for a first amount of time. Responsive to determining that the one-way delay of the second data flow's data packets exceed a second delay threshold, transmissions of the second data flow's packets are paused for a second amount of time that exceeds the first amount of time.
    Type: Application
    Filed: April 20, 2022
    Publication date: October 27, 2022
    Inventors: Yilong Geng, Balaji S. Prabhakar, Shiyu Liu
  • Publication number: 20220345389
    Abstract: Network traffic is monitored to coordinate control of data flows and detect anomalies. For a data flow transmitted between sender and receiver hosts, pre-defined amounts of sent and received network traffic of the data flow is recorded. The data flow is monitored, based on time stamps of data packets in the network traffic, for an anomaly. Responsive to determining that no anomaly is detected, the recorded sent and received network traffic is overwritten with newly sent and newly received network traffic, respectively. Responsive to determining that an anomaly is detected, the data flow is paused, which causes the sender host to store the recorded sent network traffic to a first buffer and causes the receiver host the store the recorded received network traffic to a second buffer.
    Type: Application
    Filed: April 20, 2022
    Publication date: October 27, 2022
    Inventors: Yilong Geng, Balaji S. Prabhakar, Shiyu Liu
  • Patent number: 11454876
    Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: September 27, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Binni Varghese, Vibhu Jindal, Azeddine Zerrade, Shiyu Liu, Ramya Ramalingam
  • Publication number: 20220252971
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a trilayer on the second side of the substrate, the trilayer including a first layer on the second side of the substrate, a second layer on the first layer and a third layer on the second layer. In some embodiments, separately from or in addition to the trilayer the mask blank includes an etch stop layer between the absorber layer and the capping layer, and there is a hard mask layer on the absorber layer.
    Type: Application
    Filed: February 8, 2022
    Publication date: August 11, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20220236634
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).
    Type: Application
    Filed: January 28, 2021
    Publication date: July 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20220221783
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).
    Type: Application
    Filed: January 11, 2021
    Publication date: July 14, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal
  • Patent number: 11365475
    Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: June 21, 2022
    Assignee: Applied Materials Inc.
    Inventors: Vibhu Jindal, Shiyu Liu, Sanjay Bhat, Shuwei Liu, Wen Xiao
  • Publication number: 20220187696
    Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.
    Type: Application
    Filed: December 14, 2020
    Publication date: June 16, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Binni Varghese, Vibhu Jindal, Azeddine Zerrade, Shiyu Liu, Ramya Ramalingam
  • Patent number: 11334204
    Abstract: The present disclosure relates to touch technologies, and provides a touch component, a touch apparatus using the touch component, and a touch-control method applied to the touch apparatus. The touch component is applied to a wearable device, and includes: M self-capacitive touch electrodes (Cs1 to Csm) disposed on a single pattern wiring layer (10). Each of the touch electrodes (Cs1 to Csm) is connected to a touch chip by a wire on the pattern wiring layer (10). M is a positive integer greater than 2 and less than 10. The M touch electrodes (Cs1 to Csm) form a touch sensing surface of the touch component, the touch sensing surface has at least two sliding detection directions, the at least two sliding detection directions intersect, and a quantity of touch electrodes in each of the sliding detection directions is greater than 1.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: May 17, 2022
    Assignee: SHENZHEN GOODIX TECHNOLOGY CO., LTD.
    Inventor: Shiyu Liu
  • Patent number: 11300871
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20220107556
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
    Type: Application
    Filed: October 6, 2020
    Publication date: April 7, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20220011663
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
    Type: Application
    Filed: July 8, 2021
    Publication date: January 13, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal
  • Publication number: 20210341828
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade
  • Publication number: 20210302826
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 30, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Azeddine Zerrade, Vibhu Jindal
  • Publication number: 20210232042
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.
    Type: Application
    Filed: January 25, 2021
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam