Abstract: A method for manufacturing a solid-state image pickup apparatus includes forming a first insulating film over a substrate after forming a gate electrode of a first transfer transistor and a gate electrode of a second transfer transistor, forming a second insulating film on the first insulating film, forming a first structure and a second structure on side surfaces of the gate electrodes of the first and second transfer transistors, respectively, via the first insulating film by etching the second insulating film in such a manner that the first insulating film remains on a semiconductor region of a photoelectric conversion unit and a semiconductor region of a charge holding unit, and forming a light shielding film that covers the gate electrode of the first transfer transistor, the semiconductor region of the charge holding unit, and the gate electrode of the second transfer transistor.

Abstract: An image sensor includes a plurality of pixels. At least a pixel of the plurality of pixels includes a plurality of photoelectric converters arranged in a semiconductor substrate and a light waveguide provided for the plurality of photoelectric converters. The light waveguide includes a main waveguide surrounded by an insulation film so as to pass light entering the plurality of photoelectric converters, and a plurality of sub waveguides each arranged between the main waveguide and a corresponding photoelectric converter of the plurality of photoelectric converters. The plurality of sub waveguides are separated from each other by a separator including an electrically conductive member.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Abstract: A photoelectric transducer includes a wiring structure and a photoelectric conversion section provided on a substrate. The photoelectric conversion section includes a first electrode and a photoelectric conversion layer provided on the first electrode. The wiring structure includes a first wiring layer including a wiring pattern. The distance between the bottom face of the first electrode and the substrate is shorter than the distance between the bottom face of the wiring pattern and the substrate.

Abstract: A method of manufacturing an image capturing apparatus is provided. The method comprises forming a structure which includes an interlayer insulation film having a plurality of opening portions above an imaging and a peripheral region, forming a first film so as to cover the structure arranged above the imaging and the peripheral region while filling the plurality of opening portions, planarizing the first film to form a waveguide member above the imaging and the peripheral region, forming a second film so as to cover the waveguide member above the imaging and the peripheral region after the planarizing the first film, polishing the second film to expose the waveguide member arranged above the imaging region and removing a portion of the waveguide member arranged above the peripheral region so as to expose the interlayer insulation film after the polishing the second film.

Abstract: An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged.

Abstract: An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged.

Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

Abstract: A jelly-like potassium iodide pharmaceutical composition exhibits excellent storage stability and excellent dissolution properties, and can be taken easily. The jelly-like potassium iodide pharmaceutical composition includes potassium iodide as an active ingredient, a gelling agent, and a dispersion medium.

Abstract: Provided is a method of manufacturing an imaging apparatus. The imaging apparatus is formed on a substrate and includes a pixel region and a peripheral circuit region that is arranged on a periphery of the pixel region. The method includes: forming an insulating layer in the pixel region and the peripheral circuit region; etching the insulating layer formed in the pixel region in a state in which the peripheral circuit region is protected; planarizing a surface of the insulating layer; and forming a waveguide in the pixel region. After the forming an insulating layer and before the etching the insulating layer, an average value of heights of a top surface of the insulating layer in the pixel region is larger than an average value of heights of a top surface of the insulating layer in the peripheral circuit region.

Abstract: The reliability of electrical connectivity can be improved by a simple configuration while reducing the number of processes of connection of a coaxial cable. An outer conductor and a connector main-body part are configured to be electrically connected by pushing cable rupturing parts, which are projecting toward an inner side from a radial-direction outer side of a coaxial cable placed on a connector main-body part, against the radial-direction inner side toward the coaxial cable and rupturing an outer-periphery covering material of the coaxial cable.

Abstract: A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

Abstract: A method for manufacturing a solid-state image pickup apparatus includes forming a first insulating film over a substrate after forming a gate electrode of a first transfer transistor and a gate electrode of a second transfer transistor, forming a second insulating film on the first insulating film, forming a first structure and a second structure on side surfaces of the gate electrodes of the first and second transfer transistors, respectively, via the first insulating film by etching the second insulating film in such a manner that the first insulating film remains on a semiconductor region of a photoelectric conversion unit and a semiconductor region of a charge holding unit, and forming a light shielding film that covers the gate electrode of the first transfer transistor, the semiconductor region of the charge holding unit, and the gate electrode of the second transfer transistor.

Abstract: A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.

Abstract: An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged.

Abstract: Provided is a method of manufacturing an imaging apparatus. The imaging apparatus is formed on a substrate and includes a pixel region and a peripheral circuit region that is arranged on a periphery of the pixel region. The method includes: forming an insulating layer in the pixel region and the peripheral circuit region; etching the insulating layer formed in the pixel region in a state in which the peripheral circuit region is protected; planarizing a surface of the insulating layer; and forming a waveguide in the pixel region. After the forming an insulating layer and before the etching the insulating layer, an average value of heights of a top surface of the insulating layer in the pixel region is larger than an average value of heights of a top surface of the insulating layer in the peripheral circuit region.

Abstract: A photoelectric transducer includes a wiring structure and a photoelectric conversion section provided on a substrate. The photoelectric conversion section includes a first electrode and a photoelectric conversion layer provided on the first electrode. The wiring structure includes a first wiring layer including a wiring pattern. The distance between the bottom face of the first electrode and the substrate is shorter than the distance between the bottom face of the wiring pattern and the substrate.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Abstract: The reliability of electrical connectivity can be improved by a simple configuration while reducing the number of processes of connection of a coaxial cable. An outer conductor and a connector main-body part are configured to be electrically connected by pushing cable rupturing parts, which are projecting toward an inner side from a radial-direction outer side of a coaxial cable placed on a connector main-body part, against the radial-direction inner side toward the coaxial cable and rupturing an outer-periphery covering material of the coaxial cable.

Abstract: A method for manufacturing a solid-state image sensing device includes forming a first insulating film on a semiconductor substrate, planarizing the first insulating film, forming a second insulating film after the planarization, forming an opening in the first and the second insulating film, and forming an optical waveguide by forming a filling member in the opening. The thickness of the first insulating film is measured before the formation of the second insulating film, and the second insulating film is formed to a thickness according to the thickness of the first insulating film.