Patents by Inventor Shogo Inaba

Shogo Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8115266
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: February 14, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Publication number: 20120025922
    Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.
    Type: Application
    Filed: October 11, 2011
    Publication date: February 2, 2012
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Shogo INABA, Akira SATO
  • Publication number: 20120012950
    Abstract: A functional device includes: a substrate; a functional structure formed on the substrate; a cavity in which the functional structure is disposed; and a cover which covers the cavity, wherein the cover includes a bumpy structure including rib shaped portions, or groove shaped portions, which cross a covering range covering at least the cavity.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Shogo Inaba
  • Publication number: 20110303457
    Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
    Type: Application
    Filed: June 24, 2011
    Publication date: December 15, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Shogo INABA, Akira SATO
  • Publication number: 20110306153
    Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.
    Type: Application
    Filed: August 23, 2011
    Publication date: December 15, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Ryuji KIHARA, Shogo INABA
  • Patent number: 8063721
    Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.
    Type: Grant
    Filed: December 16, 2009
    Date of Patent: November 22, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Shogo Inaba, Akira Sato
  • Publication number: 20110254110
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Application
    Filed: June 28, 2011
    Publication date: October 20, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Toru WATANABE, Akira SATO, Shogo INABA, Takeshi MORI
  • Publication number: 20110241136
    Abstract: A MEMS device includes a substrate, an insulating layer section formed above the substrate and having a cavity, a functional element contained in the cavity, and a fuse element contained in the cavity and electrically connected with the functional element. It is preferable that the fuse element is spaced apart from the substrate.
    Type: Application
    Filed: April 5, 2011
    Publication date: October 6, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Shogo INABA
  • Patent number: 8026120
    Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: September 27, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Ryuji Kihara, Shogo Inaba
  • Publication number: 20110221536
    Abstract: A MEMS device includes a substrate, a cavity formed above the substrate, a first vibrator contained in the cavity, and a second vibrator contained in the cavity and having a natural frequency different from that of the first vibrator. The first vibrator and the second vibrator are preferably arranged along a long side of the cavity having a rectangular shape in plan view.
    Type: Application
    Filed: March 11, 2011
    Publication date: September 15, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Shogo INABA
  • Patent number: 8018302
    Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: September 13, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Shogo Inaba, Akira Sato
  • Patent number: 7994594
    Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: August 9, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Shogo Inaba, Akira Sato
  • Patent number: 7989905
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: August 2, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Publication number: 20110148537
    Abstract: An oscillator includes: a plurality of MEMS vibrators formed on a substrate; and an oscillator configuration circuit connected to the plurality of MEMS vibrators, wherein the plurality of MEMS vibrators each have a beam structure, and the respective beam structures are different, whereby their resonant frequencies are different.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 23, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Toru WATANABE, Shogo INABA, Ryuji KIHARA
  • Patent number: 7956709
    Abstract: A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: June 7, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
  • Publication number: 20110121908
    Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.
    Type: Application
    Filed: January 24, 2011
    Publication date: May 26, 2011
    Applicant: Seiko Epson Corporation
    Inventors: Shogo Inaba, Akira Sato, Toru Watanabe, Takeshi Mori
  • Publication number: 20110095383
    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
    Type: Application
    Filed: December 30, 2010
    Publication date: April 28, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Toru WATANABE, Akira SATO, Shogo INABA, Takeshi MORI
  • Publication number: 20110089521
    Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.
    Type: Application
    Filed: December 21, 2010
    Publication date: April 21, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Akira SATO, Toru Watanabe, Shogo Inaba, Takeshi Mori
  • Patent number: 7892875
    Abstract: A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: February 22, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Shogo Inaba, Akira Sato, Toru Watanabe, Takeshi Mori
  • Publication number: 20110031564
    Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.
    Type: Application
    Filed: October 19, 2010
    Publication date: February 10, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Shogo INABA, Akira SATO, Toru WATANABE, Takeshi MORI