Patents by Inventor Shogo Inaba
Shogo Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7884431Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.Type: GrantFiled: February 23, 2010Date of Patent: February 8, 2011Assignee: Seiko Epson CorporationInventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
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Patent number: 7880245Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.Type: GrantFiled: February 18, 2010Date of Patent: February 1, 2011Assignee: Seiko Epson CorporationInventors: Akira Sato, Toru Watanabe, Shogo Inaba, Takeshi Mori
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Patent number: 7838952Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.Type: GrantFiled: October 15, 2007Date of Patent: November 23, 2010Assignee: Seiko Epson CorporationInventors: Shogo Inaba, Akira Sato, Toru Watanabe, Takeshi Mori
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Publication number: 20100178717Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.Type: ApplicationFiled: January 8, 2010Publication date: July 15, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Ryuji KIHARA, Shogo INABA
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Publication number: 20100148284Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.Type: ApplicationFiled: February 23, 2010Publication date: June 17, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Toru WATANABE, Akira SATO, Shogo INABA, Takeshi MORI
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Publication number: 20100140734Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.Type: ApplicationFiled: February 18, 2010Publication date: June 10, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Akira SATO, Toru WATANABE, Shogo INABA, Takeshi MORI
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Publication number: 20100109815Abstract: A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.Type: ApplicationFiled: January 8, 2010Publication date: May 6, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Shogo INABA, Akira SATO, Toru WATANABE, Takeshi MORI
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Patent number: 7709912Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.Type: GrantFiled: October 19, 2007Date of Patent: May 4, 2010Assignee: Seiko Epson CorporationInventors: Akira Sato, Toru Watanabe, Shogo Inaba, Takeshi Mori
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Publication number: 20100090786Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.Type: ApplicationFiled: December 16, 2009Publication date: April 15, 2010Applicant: SEIKO EPSON CORPORATIONInventors: SHOGO INABA, AKIRA SATO
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Patent number: 7696587Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.Type: GrantFiled: October 22, 2007Date of Patent: April 13, 2010Assignee: Seiko Epson CorporationInventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
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Patent number: 7671430Abstract: A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.Type: GrantFiled: October 30, 2007Date of Patent: March 2, 2010Assignee: Seiko Epson CorporationInventors: Shogo Inaba, Akira Sato, Toru Watanabe, Takeshi Mori
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Patent number: 7656252Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.Type: GrantFiled: November 17, 2006Date of Patent: February 2, 2010Assignee: Seiko Epson CorporationInventors: Shogo Inaba, Akira Sato
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Publication number: 20090302707Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.Type: ApplicationFiled: August 3, 2009Publication date: December 10, 2009Applicant: Seiko Epson CorporationInventors: Shogo INABA, Akira SATO
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Publication number: 20090179287Abstract: A functional device includes: a substrate; a functional structure formed on the substrate; a cavity in which the functional structure is disposed; and a cover which covers the cavity, wherein the cover includes a bumpy structure including rib shaped portions, or groove shaped portions, which cross a covering range covering at least the cavity.Type: ApplicationFiled: January 9, 2009Publication date: July 16, 2009Applicant: SEIKO EPSON CORPORATIONInventor: Shogo Inaba
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Publication number: 20080224241Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.Type: ApplicationFiled: March 11, 2008Publication date: September 18, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Shogo INABA, Akira SATO
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Publication number: 20080142912Abstract: A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.Type: ApplicationFiled: October 30, 2007Publication date: June 19, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Shogo INABA, Akira SATO, Toru WATANABE, Takeshi MORI
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Publication number: 20080105951Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.Type: ApplicationFiled: October 19, 2007Publication date: May 8, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Akira SATO, Toru WATANABE, Shogo INABA, Takeshi MORI
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Publication number: 20080093685Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.Type: ApplicationFiled: October 22, 2007Publication date: April 24, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Toru Watanabe, Akira Sato, Shogo Inaba, Takeshi Mori
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Publication number: 20080093684Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.Type: ApplicationFiled: October 15, 2007Publication date: April 24, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Shogo INABA, Akira SATO, Toru WATANABE, Takeshi MORI
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Publication number: 20080035458Abstract: A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.Type: ApplicationFiled: August 1, 2007Publication date: February 14, 2008Applicant: SEIKO EPSON CORPORATIONInventors: Toru WATANABE, Akira SATO, Shogo INABA, Takeshi MORI