Abstract: Using an optical electric field enhancing device including a fine uneven structure made of gold formed on the front surface of a transparent substrate, illumination light of a wavelength in the range from 400 to 530 nm is applied at least to an analyte, positional information of the analyte is detected by a position detection unit disposed on the rear surface side of the optical electric field enhancing device, and excitation light is applied to the detected position by an excitation light application unit. Signal light emitted from the analyte when the excitation light is applied is detected from the rear surface side of the transparent substrate.

Abstract: An optical electric field enhancing device is used with a measuring method which includes two-dimensionally scanning a surface in in-plane direction of the surface to detect, from the rear surface side of the device, signal light emitted from each scanning point when excitation light is applied, and obtaining a two-dimensional signal image on the surface based on the detected signal light. The device includes a transparent substrate, a marker pattern directly formed on the transparent substrate and extending in a direction non-parallel to the main scanning direction of the two-dimensional scanning, and fine uneven structures formed on the marker pattern and the transparent substrate where at least the surface is made of a metal film.

Abstract: An optical electrical field enhancing device includes: a transparent substrate having a structure of fine protrusions and recesses on the surface thereof; and a metal structure layer of fine protrusions and recesses formed on the surface of the structure of fine protrusions and recesses. The metal structure layer of fine protrusions and recesses has a structure of fine protrusions and recesses, in which the distances among adjacent protrusions are less than the distances among corresponding adjacent protrusions of the structure of fine protrusions and recesses of the transparent substrate.

Abstract: An optical field enhancement device that generates an enhanced optical field on a surface of a metal film by an optical field enhancement effect of localized plasmon induced on the surface of the metal film by light projected onto a nanostructure on which the metal film is formed, the device including a transparent substrate having a transparent nanostructure on a surface, a metal film formed on a surface of the nanostructure, and a support member for supporting a subject at a position spaced apart from the surface of the metal film.

Abstract: The mass spectrometry apparatus is constituted by a sample plate to which a measurement target substance is adhered, the sample plate being transparent to a laser beam; a support mount on which the sample plate is placed, a part of the support mount being a light transmitting portion that transmits a laser beam; a light irradiation unit that exposes the measurement target substance to a laser beam from the back side of the sample plate and is provided with a laser source that outputs a laser beam, a collecting lens that collects a laser beam onto the measurement target substance, and an aberration-correction mechanism that corrects aberration which occurs when the laser beams are collected; and a detector that detects the measurement target substance which has been desorbed from the surface of the sample plate and ionized, by being irradiated with a laser beam.

Abstract: A surface enhanced Raman spectrometry apparatus is constituted by: a transparent substrate; a metal member that causes surface enhanced Raman scattering to occur, formed on a surface of the transparent substrate; a pressing mechanism that presses a sample placed in contact with the metal member against the metal member; a measuring light irradiating optical system that irradiates a measuring light beam onto the sample through the transparent substrate; and a light detecting section that spectrally detects Raman scattered light, which is generated when the measuring light beam is irradiated onto the sample, through the transparent substrate.

Abstract: A thin film of a first metal or a metal oxide is formed on a substrate. A structure layer of fine protrusions and recesses of the first metal or a hydroxide of the metal oxide is formed by causing the thin film formed on the substrate to undergo a hydrothermal reaction. Thereafter, a metal structure layer of fine protrusions and recesses is formed on the surface of the structure layer of fine protrusions and recesses.

Abstract: An optical electrical field enhancing device includes: a transparent substrate having a structure of fine protrusions and recesses on the surface thereof; and a metal structure layer of fine protrusions and recesses formed on the surface of the structure of fine protrusions and recesses. The metal structure layer of fine protrusions and recesses has a structure of fine protrusions and recesses, in which the distances among adjacent protrusions are less than the distances among corresponding adjacent protrusions of the structure of fine protrusions and recesses of the transparent substrate.

Abstract: In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror in which high-index layers and low-index layers, having optical thicknesses randomly varying in the range of one-eighth to half of the predetermined wavelength, are alternately laminated, and the negative-dispersion mirror causes a mirror dispersion of ?1000 fsec2 to ?100 fsec2 and realizes a reflectance of 97% to 99.5%.

Abstract: There is provided a mode-locked laser device including: a resonator; a solid-state laser medium that is disposed in the resonator and outputs oscillation light in accordance with the incidence of excitation light; a saturable absorber that is disposed in the resonator and induces soliton mode-locking; a group velocity dispersion correction component that is disposed in the resonator and controls group velocity dispersion in the resonator; and an excitation portion that causes excitation light to be incident at the solid-state laser medium, wherein a resonator length of the resonator is at least a resonator length with which soliton mode-locking is inducible and is less than a resonator length with which non-soliton mode-locking is inducible.

Abstract: There is provided a mode locked laser device including: a cavity, the cavity having a semiconductor saturable absorbing mirror and a negative dispersion mirror that controls group velocity dispersion within the cavity, disposed in a straight line; a solid-state laser medium, disposed in the cavity and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; and a cavity holder, the light incident face of the semiconductor saturable absorbing mirror attached to one end of the cavity holder, the negative dispersion mirror attached to the other end of the cavity holder, and the cavity holder integrally supporting the semiconductor saturable absorbing mirror and the negative dispersion mirror.

Abstract: In a mirror including a substrate and a dielectric multilayer coating structure formed on the substrate, the multilayer coating structure includes two mirror-function layer portions, each formed by a plurality of layers deposited one on another, and a cavity layer that is arranged between the two mirror-function layer portions, and which causes light having a predetermined wavelength to resonate between the two mirror-function layer portions. Further, a dispersion value with respect to the light having the predetermined wavelength is in the range of ?600 fs2 to ?3000 fs2 and a reflectance with respect to the light having the predetermined wavelength is in the range of 97% to 99.5%.

Abstract: There is provided a mode-locked laser including: a resonator having a pair of resonance mirrors; a solid-state laser medium, disposed in the resonator and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; a mode-locked element, disposed in the resonator for inducing mode locking; and a temperature adjusting unit that adjusts the temperature of the pair of resonance mirrors such that oscillating light of a specific frequency is output from the resonator.

Abstract: There is provided a solid-state laser device including: a resonator; a solid-state laser medium disposed in the resonator; an excitation section that irradiates an excitation beam into the solid-state laser medium; a mode selector that controls transverse modes of oscillating light in the resonator; and a movement section that moves the mode selector along the resonator optical axis direction.

Abstract: In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by two multilayer mirrors and a cavity layer sandwiched between the two multilayer mirrors, and causing a mirror dispersion of ?3000 fsec2 to ?600 fsec2 and realizes a reflectance of 97% to 99.5%.

Abstract: In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by three or more multilayer mirrors and cavity layers arranged at predetermined intervals between the three or more multilayer mirrors, and causing a mirror dispersion of ?3000 fsec2 to ?600 fsec2 and realizes a reflectance of 97% to 99.5%.

Abstract: A mode-locked laser device includes a Fabry-Perot resonator, a mode-locking element disposed within the resonator, a solid-state laser medium disposed within the resonator, and exciting means for applying excitation light to the solid-state laser medium. The opposite ends of the resonator, the mode-locking element and the solid-state laser medium are disposed to provide an average beam diameter of lasing light of not more than 150 ?m on the mode-locking element and an average beam diameter of the lasing light of not more than 200 ?m within the solid-state laser medium.

Abstract: A mode-locked solid-state laser apparatus includes: a resonator having a linear form; a solid-state laser medium arranged in the resonator; a saturable absorber which is arranged at one end of the resonator or inside the resonator for inducing mode locking; an excitation optical system which injects excitation light into the solid-state laser medium; and a cavity dumping mechanism which extracts from the resonator pulsed light oscillating in the resonator. The cavity dumping mechanism includes an electro-optical modulator which changes the direction of polarization of the pulsed light, and a deflector which has a function of deflecting the pulsed light to a direction intersecting the optical axis of the resonator after the pulsed light undergoes the change by the electro-optical modulator.

Abstract: Providing a soliton mode-locked solid-state laser that includes a resonator, a first end of which is formed of a semiconductor saturable absorption mirror, a solid-state laser medium, a negative group velocity dispersion compensator for compensating for group velocity dispersion within the resonator, and an excitation optical system that outputs excitation light for exciting the solid-state laser medium, and oscillates soliton pulse laser light with a repetition frequency of not less than 1 GHz, an intensity modulator that includes a waveguide electrooptic modulator for modulating intensity of the soliton pulse laser light and a driver for applying a voltage to the waveguide electrooptic modulator according to desired information, and a nonlinear optical element for converting the intensity-modulated soliton pulse laser light to a second harmonic wave.

Abstract: A mode-locked laser device includes a Fabry-Perot resonator, a mode-locking element disposed within the resonator, a solid-state laser medium disposed within the resonator, and exciting means for applying excitation light to the solid-state laser medium. The opposite ends of the resonator, the mode-locking element and the solid-state laser medium are disposed to provide an average beam diameter of lasing light of not more than 150 ?m on the mode-locking element and an average beam diameter of the lasing light of not more than 200 ?m within the solid-state laser medium.