Patents by Inventor Shoji Kawahito

Shoji Kawahito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030117308
    Abstract: A pseudo-differential amplifier circuit 1 is constructed from two equivalent amplifiers 2 and 3 that amplify a pair of input signals without using a differential pair. This pseudo-differential amplifier circuit 1 is used in an arithmetic unit in each of the A-D converter circuits AD1 through ADm in a parallel pipeline A-D converter 10.
    Type: Application
    Filed: November 21, 2002
    Publication date: June 26, 2003
    Inventors: Shoji Kawahito, Daisuke Miyazaki
  • Patent number: 6141455
    Abstract: An image sensing element for providing a series of voltage signals corresponding to a two-dimensional image, a two-dimensional analog DCT (discrete cosine transform) circuit for performing a two-dimensional DCT on the voltage signal series from the image sensing element in pixel blocks, and a quantization circuit for quantizing a result of the DCT are provided. The two-dimensional analog DCT circuit is formed of a row of analog sum-of-products arithmetic units for one-dimensional DCT and an analog memory array for matrix transposition. The quantization circuit converts a voltage representing a result of the DCT carried out by the two-dimensional analog DCT circuit into a digital value according to a given quantization coefficient Q=2.sup.N .multidot.S(1.ltoreq.S<2) wherein a voltage S.multidot.Vref that is S times greater than a fixed voltage Vref serves as a reference voltage, and performs a process of right-shifting the digital value N bits in order to provide a quantized digital value.
    Type: Grant
    Filed: October 2, 1997
    Date of Patent: October 31, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akira Matsuzawa, Shoji Kawahito, Yoshiaki Tadokoro
  • Patent number: 5165282
    Abstract: A semiconductor pressure sensor comprises a diaphragm formed by anisotropic etching of silicon single crystal, characterized in that an etch-stop layer is provided at the site where etching is to be stopped, and that an etch-stop layer having insulating property is provided as the insulating layer of the pressure-sensitive portion.
    Type: Grant
    Filed: November 9, 1990
    Date of Patent: November 24, 1992
    Assignee: Toyoko Kagaku Co., Ltd.
    Inventors: Tetsuro Nakamura, Makoto Ishida, Shoji Kawahito, Yasuji Hikita