Patents by Inventor Shou-Gwo Wuu

Shou-Gwo Wuu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060148119
    Abstract: The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS type photodiode with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
    Type: Application
    Filed: February 23, 2006
    Publication date: July 6, 2006
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
  • Patent number: 7067891
    Abstract: Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.
    Type: Grant
    Filed: November 4, 2003
    Date of Patent: June 27, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Dunn-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Yi-Shing Chang
  • Patent number: 7061028
    Abstract: A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: June 13, 2006
    Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chein-Hsien Tseng
  • Patent number: 7038232
    Abstract: The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: May 2, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chen, Chien-Hsien Tseng, Jeng-Shyan Lin
  • Publication number: 20060073629
    Abstract: A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
    Type: Application
    Filed: November 22, 2005
    Publication date: April 6, 2006
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chein-Hsien Tseng
  • Publication number: 20060063294
    Abstract: A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
    Type: Application
    Filed: November 10, 2005
    Publication date: March 23, 2006
    Inventors: Tzu-Hsuan Hsu, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung
  • Publication number: 20060054939
    Abstract: A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 ?m. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
    Type: Application
    Filed: November 4, 2004
    Publication date: March 16, 2006
    Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Wen-De Wang, Ho-Ching Chien, Shou-Gwo Wuu
  • Patent number: 6982443
    Abstract: A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: January 3, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Hsuan Hsu, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung
  • Publication number: 20050199921
    Abstract: A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
    Type: Application
    Filed: March 12, 2004
    Publication date: September 15, 2005
    Inventors: Tzu-Hsuan Hsu, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung
  • Publication number: 20050133837
    Abstract: Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
    Type: Application
    Filed: April 5, 2004
    Publication date: June 23, 2005
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu Hsu, Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
  • Publication number: 20050093086
    Abstract: Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.
    Type: Application
    Filed: November 4, 2003
    Publication date: May 5, 2005
    Inventors: Dunn-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Yi-Shing Chang
  • Publication number: 20050082586
    Abstract: A metal-insulator-metal (MIM) capacitor structure and method of manufacturing thereof. A plurality of MIM capacitor patterns is formed in two or more insulating layers. The insulating layers may comprise a via layer and a metallization layer of a semiconductor device. A top portion of the top insulating layer is recessed in a region between at least two adjacent MIM capacitor patterns. When the top plate material of the MIM capacitors is deposited, the top plate material fills the recessed area of the top insulating layer between the adjacent MIM capacitor pattern, forming a connecting region that couples together the top plates of the adjacent MIM capacitors. A portion of the MIM capacitor bottom electrode may be formed in a first metallization layer of the semiconductor device.
    Type: Application
    Filed: October 20, 2003
    Publication date: April 21, 2005
    Inventors: Kuo-Chi Tu, Chun-Yao Chen, Shou-Gwo Wuu, Chen-Jong Wang
  • Publication number: 20050062118
    Abstract: The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
    Type: Application
    Filed: September 24, 2003
    Publication date: March 24, 2005
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
  • Publication number: 20050056885
    Abstract: Semiconductor devices having a dual polysilicon electrode and a method of manufacturing are provided. The semiconductor devices include a first polysilicon layer deposited on a second polysilicon layer. Each polysilicon layer may be doped individually. The method also allows for some semiconductor devices on a wafer to have a single polysilicon wafer and other devices to have a dual polysilicon layer. In one embodiment, the semiconductor devices are utilized to form a memory device wherein the storage capacitors and transistors located in the cell region are formed with a dual polysilicon layer and devices in the periphery region are formed with a single polysilicon layer.
    Type: Application
    Filed: September 15, 2003
    Publication date: March 17, 2005
    Inventors: Chih-Yang Pai, Min-Hsiung Chiang, Chen-Jong Wang, Shou-Gwo Wuu
  • Publication number: 20050030403
    Abstract: A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains. an array of image pixels where for each image pixel the majority of its area is occupied by a light sensing element and the other image pixel circuit elements are arranged in the periphery of the image pixel without overlapping the image-sensing element. A number of metal levels are of the first type, at which functional metal patterns exist both for the chip peripheral logic circuits and for the pixel circuit elements. A number of metal levels are of the second type, at which functional metal patterns exist only for the chip peripheral logic circuits and dummy metal patterns cover the pixel region except for the light sensing elements.
    Type: Application
    Filed: September 20, 2004
    Publication date: February 10, 2005
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Chien-Hsien Tseng
  • Patent number: 6815787
    Abstract: A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains an array of image pixels where for each image pixel the majority of its area is occupied by a light sensing element and the other image pixel circuit elements are arranged in the periphery of the image pixel without overlapping the image-sensing element. A number of metal levels are of the first type, at which functional metal patterns exist both for the chip peripheral logic circuits and for the pixel circuit elements. A number of metal levels are of the second type, at which functional metal patterns exist only for the chip peripheral logic circuits and dummy metal patterns cover the pixel region except for the light sensing elements.
    Type: Grant
    Filed: January 8, 2002
    Date of Patent: November 9, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Chien-Hsien Tseng
  • Publication number: 20040211987
    Abstract: An image sensor optoelectronic product and a method for fabrication thereof comprise a photodiode region overlapping a source/drain region of the same polarity within a reset metal oxide semiconductor field effect transistor device. The image sensor optoelectronic product also comprises a bridging implant region of the same polarity as the photodiode region and the source/drain region. The bridging implant region overlaps the photodiode region, encompasses the source/drain region and extends laterally into the channel region of the reset metal oxide semiconductor field effect transistor device. The bridging implant region provides the image sensor optoelectronic product with attenuated leakage and attenuated white pixel cell susceptibility.
    Type: Application
    Filed: April 24, 2003
    Publication date: October 28, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ho-Ching Chien, Shou-Gwo Wuu, Chien-Hsien Tseng, Dun-Nian Yuang, Jeng-Shyan Lin
  • Publication number: 20040180461
    Abstract: A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
    Type: Application
    Filed: March 12, 2003
    Publication date: September 16, 2004
    Applicant: Taiwan Semiconductor Manufacturing Company
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng
  • Publication number: 20040075110
    Abstract: A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.
    Type: Application
    Filed: October 9, 2003
    Publication date: April 22, 2004
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng
  • Patent number: 6710413
    Abstract: An improved borderless contact structure for salicide field effect transistors (FETs) has been achieved. Salicide FETs are formed on device areas surrounded by a shallow trench isolation (STI) using a first rapid thermal anneal to form a metal silicide on the source/drain contacts and the gate electrodes. An interlevel dielectric (ILD) layer is deposited, and borderless contact openings, extending over the STI, are etched in the ILD to the source/drain areas. When the contact openings are etched, this results in over-etched regions in the STI at the source/drain-STI interface that result in source/drain-to-substrate shorts when metal plugs are formed in the contact openings. A contact opening implant is used to dope the junction profile in the source/drain contact around the STI over-etched region to prevent electrical shorts. The second RTA is then used to concurrently reduce the silicide sheet resistance and to electrically activate the contact opening implanted dopant.
    Type: Grant
    Filed: February 27, 2002
    Date of Patent: March 23, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Kong-Beng Thei, Ming-Ta Lei, Shou-Gwo Wuu