Abstract: A package module includes a power module, a first thermal dissipating component and a packaging plastic. The power module includes a substrate and at least one power semiconductor component disposed on the substrate. The first thermal dissipating component is disposed over the power module. The packaging plastic covers the power module and the first thermal dissipating component, wherein a portion of the first thermal dissipating component is exposed from the packaging plastic.

Abstract: A package module includes a circuit board, an electronic component disposed on the circuit board, a frame disposed next to at least one side of the electronic component, and an encapsulant. A gap is formed between the frame and the electronic component. The encapsulant includes a first portion covering at least a part of the circuit board, and a second portion filling into at least a part of the gap. The first portion has a first height relative to the circuit board, and the second portion has a second height relative to the circuit board, in which the second height is greater than the first height.

Abstract: A package module includes a circuit board, an electronic component disposed on the circuit board, a frame disposed next to at least one side of the electronic component, and an encapsulant. A gap is formed between the frame and the electronic component. The encapsulant includes a first portion covering at least a part of the circuit board, and a second portion filling into at least a part of the gap. The first portion has a first height relative to the circuit board, and the second portion has a second height relative to the circuit board, in which the second height is greater than the first height.

Abstract: A package module includes a power module, a first thermal dissipating component and a packaging plastic. The power module includes a substrate and at least one power semiconductor component disposed on the substrate. The first thermal dissipating component is disposed over the power module. The packaging plastic covers the power module and the first thermal dissipating component, wherein a portion of the first thermal dissipating component is exposed from the packaging plastic.

Abstract: A package module includes a power module, a first thermal dissipating component and a packaging plastic. The power module includes a substrate and at least one power semiconductor component disposed on the substrate. The first thermal dissipating component is disposed over the power module. The packaging plastic covers the power module and the first thermal dissipating component, wherein a portion of the first thermal dissipating component is exposed from the packaging plastic.

Abstract: Disclosed herein is a power electronic circuit having a reference ground and a differential mode loop unit. The differential mode loop unit has a capacitance component, a switch and an electronic component, wherein the capacitance component has a first end, the switch has a first end connecting in series with the capacitance component, the electronic component has a first end, the electronic component connects in series with the capacitance component and the switch, the capacitance component and switch are packaged in a power module, the power module has a trace and at least one output pin connected to reference ground, wherein the first end of the switch or the first end of the electronic component is only connected to the first end of the capacitance component through the trace, and the first end of the capacitance component is connected to reference ground through the output pin.

Abstract: A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 ?m?d1?50 ?m. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2?100 ?m. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.

Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors.

Abstract: A power converter includes a carrier, a first electronic component, a second electronic component, and a connection part. The first electronic component is disposed on the bottom surface of the carrier. The second electronic component is disposed on the top surface of the carrier. A first terminal of the connection part is coupled to the top surface or the bottom surface of the carrier. A second terminal of the connection part is a bonding pad and attached to the first electronic component's surface apart from the carrier. The carrier is disposed at ? to ? of a height of the power-converter. The connection part is fabricated by mechanical support of the first electronic component.

Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors.

Abstract: A switch circuit package module includes at least a semiconductor switch unit and at least a first capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element and the second semiconductor switch element include a plurality of sub micro-switch elements. The capacitor unit includes a plurality of capacitors configured to cooperate with the sub micro-switch elements. The capacitors are arranged in a symmetrical distribution surrounded the semiconductor switch unit, such that impedances of any two symmetrical commutation loops each of which mainly consists of one capacitor and two sub micro-switch elements from the first semiconductor switch element and second semiconductor switch element respectively are close to or the same with each other.

Abstract: An electrical component is disclosed, the electrical component comprising: a magnetic body having a top surface, a bottom surface, wherein at least one first conductive through hole is formed from the top surface to bottom surface of the magnetic body; and a coil disposed in the magnetic body, wherein a first end of the coil is electrically connected to one of the at least one first conductive through hole.

Abstract: A power converter includes a carrier, a first electronic component, a second electronic component, and a connection part. The first electronic component is disposed on the bottom surface of the carrier. The second electronic component is disposed on the top surface of the carrier. A first terminal of the connection part is coupled to the top surface or the bottom surface of the carrier. A second terminal of the connection part is a bonding pad and attached to the first electronic component's surface apart from the carrier. The carrier is disposed at ? to ? of a height of the power-converter. The connection part is fabricated by mechanical support of the first electronic component.

Abstract: A package module includes a circuit board, an electronic component disposed on the circuit board, a frame disposed next to at least one side of the electronic component, and an encapsulant. A gap is formed between the frame and the electronic component. The encapsulant includes a first portion covering at least a part of the circuit board, and a second portion filling into at least a part of the gap. The first portion has a first height relative to the circuit board, and the second portion has a second height relative to the circuit board, in which the second height is greater than the first height.

Abstract: A package module includes a power module, a first thermal dissipating component and a packaging plastic. The power module includes a substrate and at least one power semiconductor component disposed on the substrate. The first thermal dissipating component is disposed over the power module. The packaging plastic covers the power module and the first thermal dissipating component, wherein a portion of the first thermal dissipating component is exposed from the packaging plastic.

Abstract: A power module includes a magnetic component and a switch component. The magnetic component includes a magnetic core, and a winding disposed in the magnetic core. An end of the winding forms a pin of the power module for electrically connecting to an external circuit. The switch component is electrically connected to the magnetic component. An I/O pin of the power module may be formed from an end of the winding, such that a bonding/contact resistance of connecting the power module to the external circuit can be reduced.

Abstract: A power system, a power module therein and a method for fabricating power module are disclosed herein. The power module includes a first and a second common pins, and a first and a second bridge arms. The first and the second common pins are symmetrically disposed at one side of a substrate. The first bridge arm includes a first and a second semiconductor devices, and the first and the second semiconductor devices are connected to each other through the first common pin and disposed adjacently. The second bridge arm includes a third and a fourth semiconductor devices, and the third and the fourth semiconductor devices are connected to each other through the second common pin and disposed adjacently. The first and the third semiconductor devices are disposed symmetrically, and the second and the fourth semiconductor devices are disposed symmetrically.

Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors.

Abstract: A switch circuit package module includes at least a semiconductor switch unit and at least a first capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element and the second semiconductor switch element include a plurality of sub micro-switch elements. The capacitor unit includes a plurality of capacitors configured to cooperate with the sub micro-switch elements. The capacitors are arranged in a symmetrical distribution surrounded the semiconductor switch unit, such that impedances of any two symmetrical commutation loops each of which mainly consists of one capacitor and two sub micro-switch elements from the first semiconductor switch element and second semiconductor switch element respectively are close to or the same with each other.