Abstract: A method of fabricating a semiconductor leadframe package from a strip including multiply encapsulated leadframe packages, and a leadframe package formed thereby are disclosed. An entire row or column of leadframes gets encapsulated together. Encapsulating an entire row or column reduces the keep-out area between adjacent leadframe packages, which allows the internal leads of each leadframe and the semiconductor die coupled thereto to be lengthened.

Abstract: A leadframe design for forming leadframe-based semiconductor packages having curvilinear shapes is disclosed. The leadframes may each include one or more curvilinear slots corresponding to curvilinear edges in the finished and singulated semiconductor package. After encapsulation, the integrated circuit packages on the panel may be singulated by cutting the integrated circuits from the leadframe panel into a plurality of individual integrated circuit packages. The slots in the leadframe advantageously allow each leadframe to be singulated using a saw blade making only straight cuts.

Abstract: A semiconductor package is disclosed including test pads formed of solder bumps affixed to the semiconductor package during fabrication. When the package is encapsulated, due to the pressure exerted on the package during the encapsulation process, portions of the solder bumps get flattened out to be generally flush with and exposed on a surface of the semiconductor package. These exposed portions of the solder bumps form the test pads by which the finished package may be tested.

Abstract: Methods for forming leadframe-based semiconductor packages having curvilinear shapes are disclosed. The leadframes may each include one or more curvilinear slots corresponding to curvilinear edges in the finished and singulated semiconductor package. After encapsulation, the integrated circuit packages on the panel may be singulated by cutting the integrated circuits from the leadframe panel into a plurality of individual integrated circuit packages. The slots in the leadframe advantageously allow each leadframe to be singulated using a saw blade making only straight cuts.

Abstract: A method is disclosed for forming semiconductor packages by a process of punching and cutting the packages from a panel of integrated circuits. During an encapsulation process for encapsulating the packages in a molding compound, portions of the panel may be left free of molding compound. Portions of the panel left free of molding compound may subsequently be punched from the panel. These punched areas may define chamfers, notches or a variety of other curvilinear, rectilinear or irregular shapes in the outer edges of the finished semiconductor package. After the panel is punched, the integrated circuits may be singulated. By punching areas from the panel, and then cutting along straight edges, a simple, effective and cost efficient method is disclosed for obtaining finished semiconductor packages of a variety of desired shapes.

Abstract: A method of making a semiconductor device is disclosed including die bond pads which are heightened to allow wire bonding of offset stacked die even in tight offset configurations. After a first die is affixed to a substrate, one or more layers of an electrical conductor may be provided on some or all of the die bond pads of the first substrate to raise the height of the bond pads. The conductive layers may for example be conductive balls deposited on the die bond pads of the first substrate using a known wire bond capillary. Thereafter, a second die may be added, and wire bonding of the first die may be accomplished using a known wire bond capillary mounting a wire bond ball on a raised surface of a first semiconductor die bond pad.

Abstract: A semiconductor device is disclosed including die bond pads which are heightened to allow wire bonding of offset stacked die even in tight offset configurations. After a first die is affixed to a substrate, one or more layers of an electrical conductor may be provided on some or all of the die bond pads of the first substrate to raise the height of the bond pads. The conductive layers may for example be conductive balls deposited on the die bond pads of the first substrate using a known wire bond capillary. Thereafter, a second die may be added, and wire bonding of the first die may be accomplished using a known wire bond capillary mounting a wire bond ball on a raised surface of a first semiconductor die bond pad.

Abstract: A semiconductor device and methods of forming same are disclosed having multiple die redistribution layer. After fabrication of semiconductor die on a wafer and prior to singulation from the wafer, adjacent semiconductor die are paired together and a redistribution layer may be formed across the die pair. The redistribution layer may be used to redistribute at least a portion of the bond pads from the first die in the pair to a second die in the pair. One die in each pair will be a working die and the other die in each pair will be a dummy die. The function of the integrated circuit beneath the redistribution layer on the dummy die is at least partially sacrificed.

Abstract: A semiconductor device and methods of forming same are disclosed having multiple die redistribution layer. After fabrication of semiconductor die on a wafer and prior to singulation from the wafer, adjacent semiconductor die are paired together and a redistribution layer may be formed across the die pair. The redistribution layer may be used to redistribute at least a portion of the bond pads from the first die in the pair to a second die in the pair. One die in each pair will be a working die and the other die in each pair will be a dummy die. The function of the integrated circuit beneath the redistribution layer on the dummy die is at least partially sacrificed.

Abstract: A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first and second semiconductor die are separated by a low profile intermediate adhesive layer. After the intermediate layer is applied, the second semiconductor die may be stacked on top of the intermediate layer. The first semiconductor layer may be wire-bonded to the substrate using bond wires sheathed within an electrical insulator. As the bond wires are surrounded by an electrical insulator, the intermediate layer need not space the wire bond loops from the second semiconductor die as in the prior art, and the apex of bond wires may come into contact with the dielectric layer. The intermediate layer may thus be made thinner in comparison to conventional stacked semiconductor die configurations.

Abstract: A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first and second semiconductor die are separated by a low profile intermediate adhesive layer in which the wire bond loops from the first semiconductor die are embedded. After the intermediate layer is applied, the second semiconductor die may be stacked on top of the intermediate layer. A dielectric layer may be formed on a back surface of the second semiconductor die. As the back side of the second semiconductor die is an electrical insulator, the intermediate layer need not space the wire bond loops from the second semiconductor die as in the prior art, and the apex of bond wires may come into contact with the dielectric layer. The intermediate layer may thus be made thinner in comparison to conventional stacked semiconductor die configurations.

Abstract: A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first and second semiconductor die are separated by a low profile intermediate adhesive layer. After the intermediate layer is applied, the second semiconductor die may be stacked on top of the intermediate layer. The first semiconductor layer may be wire-bonded to the substrate using bond wires sheathed within an electrical insulator. As the bond wires are surrounded by an electrical insulator, the intermediate layer need not space the wire bond loops from the second semiconductor die as in the prior art, and the apex of bond wires may come into contact with the dielectric layer. The intermediate layer may thus be made thinner in comparison to conventional stacked semiconductor die configurations.

Abstract: A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first and second semiconductor die are separated by a low profile intermediate adhesive layer in which the wire bond loops from the first semiconductor die are embedded. After the intermediate layer is applied, the second semiconductor die may be stacked on top of the intermediate layer. A dielectric layer may be formed on a back surface of the second semiconductor die. As the back side of the second semiconductor die is an electrical insulator, the intermediate layer need not space the wire bond loops from the second semiconductor die as in the prior art, and the apex of bond wires may come into contact with the dielectric layer. The intermediate layer may thus be made thinner in comparison to conventional stacked semiconductor die configurations.

Abstract: A semiconductor package is disclosed including test pads formed of solder bumps affixed to the semiconductor package during fabrication. When the package is encapsulated, due to the pressure exerted on the package during the encapsulation process, portions of the solder bumps get flattened out to be generally flush with and exposed on a surface of the semiconductor package. These exposed portions of the solder bumps form the test pads by which the finished package may be tested.

Abstract: Improved techniques for stacking integrated circuit dies within an integrated circuit package are disclosed. These improved techniques allow greater stacking density of integrated circuit dies within an integrated circuit package. Additionally, the improved stacking techniques permit conventional bonding techniques for electrical connection of the various integrated circuit dies to each other or to a substrate. These improved approaches are particularly useful for stacking same size (and often same function) integrated circuit dies within integrated circuit packages. One example of such an integrated circuit package is a non-volatile memory integrated circuit package that contains multiple, like-sized memory storage integrated circuit dies arranged in a stack.

Abstract: A semiconductor package is disclosed including test pads formed of solder bumps affixed to the semiconductor package during fabrication. When the package is encapsulated, due to the pressure exerted on the package during the encapsulation process, portions of the solder bumps get flattened out to be generally flush with and exposed on a surface of the semiconductor package. These exposed portions of the solder bumps form the test pads by which the finished package may be tested.

Abstract: A strip on which a plurality of integrated circuit package outlines may be fabricated within a plurality of process tools. The strip includes one or more fiducial notches and/or guide pin notches formed in an outer edge of the strip. The one or more fiducial and/or guide pin notches allow a position of the strip to be identified within at least one process tool of the plurality of process tools. By forming the notches in the outer periphery of the strip, the usable area on the strip on which integrated circuit package outlines may be formed is increased. The strip may alternatively include conventional fiducial and/or guide pin holes, with the molding compound applied at least partially around the holes on one or more sides of the strip. The strip may further alternatively include fiducial holes filled with a translucent material that provides stability to the strip while allowing the strip to be used with an optical recognition sensor.

Abstract: A leadframe design and methods for forming leadframe-based semiconductor packages having curvilinear shapes is disclosed. The leadframes may each include one or more curvilinear slots corresponding to curvilinear edges in the finished and singulated semiconductor package. After encapsulation, the integrated circuit packages on the panel may be singulated by cutting the integrated circuits from the leadframe panel into a plurality of individual integrated circuit packages. The slots in the leadframe advantageously allow each leadframe to be singulated using a saw blade making only straight cuts.

Abstract: A semiconductor package is disclosed including test pads formed of solder bumps affixed to the semiconductor package during fabrication. When the package is encapsulated, due to the pressure exerted on the package during the encapsulation process, portions of the solder bumps get flattened out to be generally flush with and exposed on a surface of the semiconductor package. These exposed portions of the solder bumps form the test pads by which the finished package may be tested.