Abstract: A metasurface for propagating phonon polaritons includes correlated oxide on a substrate and a wiring pattern of predetermined geometric shape on the surface thereof. There is a flake of van der Waals phononic exfoliable material on top of the wiring pattern/region. The wiring pattern may be formed by c-AFM or any other appropriate methods.

Abstract: A gas sensing device is provided. The gas sensing device includes a substrate, a sensing film deposited on the substrate, and a plurality of electrodes deposited on the sensing film. The sensing film comprising ReNiO3, wherein Re is a rare-earth cation wherein. At least one of the electrodes including platinum, palladium, or a combination thereof. The electrodes are spaced apart from each other for measurement of electrical resistance.

Abstract: An electrochromic structure is disclosed, which includes a first transparent non-conductive (GLASS-I) layer, a first transparent conductor (CONDUCTOR-I) layer coupled to the GLASS-I layer, an ion storage layer coupled to the CONDUCTOR-I layer, an electrolyte layer coupled to the ion storage layer, an electrochromic layer coupled to the electrolyte layer, a second transparent conductor (CONDUCTOR-II) layer coupled to the electrochromic layer, and a second transparent non-conductive (GLASS-II) layer coupled to the CONDUCTOR-II layer, wherein the electrochromic layer includes perovskite nickelates thin films formed on a transparent conductive film substrate and which has crystalline grains of the size of about 5 nm to about 200 nm resulting in intergranular porosity of about 5% to about 25%.

Abstract: An electric field sensing device. The device includes a substrate, a sensing medium capable of experiencing a change in its electrical resistivity in response to an electric field, and electrodes for use in measuring the change. A method of making an electric field sensing device. The method includes depositing on a substrate a sensing medium capable of experiencing a change in its electrical resistivity in response to an electric field emitted by an object; and placing electrodes for use in measuring the change. An electric field sensing system. The system contains a plurality electric field sensing devices, an arrangement of the plurality sensing devices in a way to detect spatial variation of electric field emitted by objects in an environment; a computer system capable of monitoring the sensing devices, and detecting and comparing differences between the electrical fields sensed by individual devices.

Abstract: Disclosed herein is an ultralow concentration sensor of biomarkers, and the use thereof to help heath industry, medical centers and food industry to sense biomarkers by catalyst assisted charge transfer from the biomarkers to the sensor device, resulting increased electrical resistance of the sensor. Specifically, perovskite nickelate RNiO3 is used to sense biological material facilitated by specific enzymatic activity in the proximity.

Abstract: An electrochromic system is disclosed which includes a first glass layer having a bottom side and a top side, the top side coated with a first transparent conductor layer, an electrolyte layer formed adjacent to the first transparent conductor layer, an electrochromic layer formed adjacent to the electrolyte layer, and a second glass layer having a top side and a bottom side, the bottom side coated with a second transparent conductor layer and coupled to the electrochromic layer.

Abstract: Reversible phase transitions of exceptional magnitude may be induced in correlated metal oxides by altering their chemical compositions through reversible introduction of dopant ions and electronic carriers into the correlated metal oxides. One or more catalyst electrodes may be deposited onto a surface of a film of a correlated metal oxide such as a perovskite or a transition metal oxide. Dopant ions and electronic carriers may be electrochemically introduced into the catalyst-deposited correlated metal oxide, for example by annealing the catalyst-deposited film of correlated metal oxide in a chamber containing the dopant molecules. In this way, a reversible phase transition of about five to eight orders of magnitude may be induced.

Abstract: An electric field sensing device. The device includes a substrate, a sensing medium capable of experiencing a change in its electrical resistivity in response to an electric field, and electrodes for use in measuring the change. A method of making an electric field sensing device. The method includes depositing on a substrate a sensing medium capable of experiencing a change in its electrical resistivity in response to an electric field emitted by an object; and placing electrodes for use in measuring the change. An electric field sensing system. The system contains a plurality electric field sensing devices, an arrangement of the plurality sensing devices in a way to detect spatial variation of electric field emitted by objects in an environment; a computer system capable of monitoring the sensing devices, and detecting and comparing differences between the electrical fields sensed by individual devices.

Abstract: A solid-state ionic conductor. The solid-state ionic conductor contains a correlated perovskite into which ions and electrons are inserted giving rise to ionic conductivity. The inserted ions occupy interstitial lattice sites of the correlated perovskite, reduce the electronic conductivity of the correlated perovskite. A method of producing a solid-state ionic conductor. The method includes forming a thin film containing a transition metal X, a rare earth element R and oxygen (O) by co-depositing the transition metal and the rare earth element on a substrate in an oxygen-containing atmosphere. The thin film is then annealed at an annealing temperature for a period of time in an oxygen containing atmosphere, resulting in formation of a crystalline film of RXO3. Ions and electrons from an ion source are then inserted into the crystalline film of RXO3, resulting in a solid-state ionic conductor.

Abstract: Phase change materials such as correlated oxides (e.g., such as NbO2, V2O3 and VO2) enable wide tuning of dielectric properties via control of temperature, electric fields, optical fields or disorder. The distinct dielectric states can be volatile or non-volatile depending on how the phase is created. Possible fabrication techniques for oxide and insulating matrix composites may include sequential/co-deposition routes as well as local controlled disorder. By combining the distinct insulating and metallic states in these systems and by control of the ground state via induced defects, artificial electronic composites, whose properties can be tuned, could be manufactured. The composites can be integral components of coplanar waveguide devices and microwave switches. More broadly, tunable electronic composites using oxide systems that undergo insulator-metal transitions may have wide usage in frequency tunable devices, including microwave devices.

Abstract: A method of forming a catalyst material includes coating agglomerates of catalyst support particles with an ionomer material. After coating the agglomerates of catalyst support particles, a catalyst metal precursor is deposited by chemical infiltration onto peripheral surfaces of the agglomerates of catalyst support particles. The catalyst metal precursor is then chemically reduced to form catalyst metal on the peripheral surfaces of the agglomerates of catalyst support particles.

Abstract: A solid oxide fuel cell has a reinforced membrane-electrode assembly. The solid oxide fuel cell includes a first electrode layer, a second electrode layer, and an electrolyte membrane disposed between the first and second electrode layers. The solid oxide fuel cell further includes a gas-permeable structure adjacent to one or both of the electrode layers, for mechanical stabilization.

Abstract: Phase transition devices may include a functional layer made of functional material that can undergo a change in conductance in response to an external stimulus such as an electric or magnetic or optical field, or heat. The functional material transitions between a conducting state and a non-conducting state, upon application of the external stimulus. A capacitive device may include a functional layer between a top electrode and a bottom electrode, and a dielectric layer between the functional layer and the top electrode. A three terminal phase transition switch may include a functional layer, for example a conductive oxide channel, deposited between a source and a drain, and a gate dielectric layer and a gate electrode deposited on the functional layer. An array of phase transition switches and/or capacitive devices may be formed on a substrate, which may be made of inexpensive flexible material.

Abstract: A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.

Abstract: Reversible phase transitions of exceptional magnitude may be induced in correlated metal oxides by altering their chemical compositions through reversible introduction of dopant ions and electronic carriers into the correlated metal oxides. One or more catalyst electrodes may be deposited onto a surface of a film of a correlated metal oxide such as a perovskite or a transition metal oxide. Dopant ions and electronic carriers may be electrochemically introduced into the catalyst-deposited correlated metal oxide, for example by annealing the catalyst-deposited film of correlated metal oxide in a chamber containing the dopant molecules. In this way, a reversible phase transition of about five to eight orders of magnitude may be induced.

Abstract: A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states.

Abstract: Phase transition devices may include a functional layer made of functional material that can undergo a change in conductance in response to an external stimulus such as an electric or magnetic or optical field, or heat. The functional material transitions between a conducting state and a non-conducting state, upon application of the external stimulus. A capacitive device may include a functional layer between a top electrode and a bottom electrode, and a dielectric layer between the functional layer and the top electrode. A three terminal phase transition switch may include a functional layer, for example a conductive oxide channel, deposited between a source and a drain, and a gate dielectric layer and a gate electrode deposited on the functional layer. An array of phase transition switches and/or capacitive devices may be formed on a substrate, which may be made of inexpensive flexible material.

Abstract: A solid oxide fuel cell has a reinforced membrane-electrode assembly. The solid oxide fuel cell includes a first electrode layer, a second electrode layer, and an electrolyte membrane disposed between the first and second electrode layers. The solid oxide fuel cell further includes a gas-permeable structure adjacent to one or both of the electrode layers, for mechanical stabilization.

Abstract: A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states.

Abstract: Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O2 gases are introduced into the sputtering chamber at the flow values of about 92.2 sccm and about 7.8 sccm respectively. A voltage is applied to create a plasma in the chamber. A sputtering gun with vanadium target material is ignited and kept at a power of about 250 W. The phase transition parameters of vanadium dioxide thin films, synthesized by RF sputtering, are modulated by exposing the vanadium dioxide thin film to UV (ultraviolet) radiation so as to induce a change in oxygen incorporation of the vanadium dioxide thin film.