Abstract: A method of manufacturing a semiconductor device includes: forming a memory cell on a substrate; forming a conductive pad region to electrically couple to the memory cell; depositing a dielectric layer over the conductive pad region; forming a first passivation layer over the dielectric layer; etching the first passivation layer through the dielectric layer, thereby exposing a first area of the conductive pad region; forming a second passivation layer over the first passivation layer and the exposed first area of the conductive pad region; and etching the second passivation layer to expose a second area of the conductive pad region.

Abstract: A modular frame with a U-shaped hook member includes multiple upright columns each having at least two faces of each of the multiple upright columns have multiple couples of first through hole and second through hole defined therein. Multiple horizontal columns are respectively connected to a corresponding one of the at least two faces of a corresponding one of the multiple upright columns. Two connecting blocks respectively mounted into a corresponding one of two opposite ends of the tube. Two U-shaped hook members are respectively mounted into a corresponding one of the two connecting blocks. Each U-shaped hook member includes a first hook and a second hook extending therefrom and respectively engaged to a lower portion of a corresponding on of the first through holes and the second through holes.

Abstract: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

Abstract: A frame hooking and connecting structure includes a column, each side of which is formed with a first through hole, and a parallel second through hole. A first support rod is provided to hook the column. The two ends of the first support rod are extended with a fastening part, and the free end of the fastening part is connected with a first hook, which is hooked and positioned to the bottom edge of the first through hole, and the fastening part is attached to a corresponding end surface of the column. A second support rod is provided to hook the column. The ends of the second support rod are respectively extended with a second hook, and the free end of the second hook penetrates through the hollow portion and the second through hole into the column, and is locked to the bottom edge of the second through hole.

Abstract: A mouse device includes a mouse body, an armrest and an armrest lifting module. The armrest is pivotally coupled to the mouse body. The armrest lifting module includes a support element, a height-adjusting elastic element, a first coupling element, a second coupling element, a push element and a slid switch. The two ends of the support element include a connection segment and a free segment, respectively. The connection segment is connected with the armrest. The free segment is penetrated through the mouse body and disposed within the mouse body. The height-adjusting elastic element is sheathed around the support element. The first coupling element is connected with the free segment, and includes a coupling rack. The push element is installed within the mouse body. The push element is movable to push the second coupling element. The slide switch is connected with the push element.

Abstract: A posture positioning system for machine and the method thereof are provided. The system mainly consists of at least a depth camera mount on a robot to scan points of cloud of the machine, and a processing unit to apply an algorithm with the points of cloud and a contour vector file of the machine to obtain a transfer relationship. The processing unit further obtains a spatial relationship by a matrix calculation with the transfer relationship and a position relationship which exists between the robot and the depth camera. A route generating module of the processing unit generates, if needed, a moving route for the robot according to the spatial relationship.

Abstract: A radar and a method for enabling array antenna are proposed. The radar includes a transceiver, a multi-input multi-output (MIMO) array antenna, a phased array antenna, and a controller. The MIMO array antenna is coupled to the transceiver and includes first transmitting sub-arrays and receiving sub-arrays. The phased array antenna is coupled to the transceiver and includes second transmitting sub-arrays and the receiving sub-arrays. The controller is coupled to the transceiver and configured to to enable the first transmitting sub-arrays to form the MIMO array antenna or enable the second transmitting sub-arrays to form the phased array antenna.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Abstract: The present invention provides an epitaxial structure of N-face AlGaN/GaN, its active device, and the method for fabricating the same. The structure comprises a substrate, a C-doped buffer layer on the substrate, a C-doped i-GaN layer on the C-doped buffer layer, a i-AlyGaN buffer layer on the C-doped i-GaN layer, an i-GaN channel layer on the C-doped i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of N-face AlGaN/GaN below the p-GaN inverted trapezoidal gate structure will be depleted. Then the 2DEG is located at the junction between the i-GaN channel layer and the i-AlyGaN layer, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs).

Abstract: A method includes receiving a natural language query at an information system, the natural language query indicating an intent and at least a first factor and a second factor. The method also includes retrieving a set of candidate information from the information system based on the natural language query, the set of candidate information having a type determined by the intent. The method additionally includes selecting a knowledge display template from a set of knowledge display templates using the intent, the first factor and the second factor. The method further includes rendering, using the knowledge display template, a first knowledge graph comprising the set of candidate information, the first knowledge graph indicating a relationship between the set of candidate information based the first factor and the second factor.

Abstract: The present invention provides a mouse device, including a housing, a flexible film, a support structure, a linking structure, and a motor. The flexible film covers an opening of the housing. The linking structure is connected between the motor and the support structure. The motor is configured to enable the linking structure to move to change an abutting state that the support structure abuts against the flexible film, thereby enabling the flexible film to deform.

Abstract: A solenoid valve includes a coil housing, a coil barrel and an actuator. The coil barrel is mounted in the coil housing, is coiled with multiple coils, and has a valve gate formed on a bottom of the coil barrel. The actuator is moveably mounted in the coil barrel and has a piston, a magnetic shaft, a spring mounted between the piston and the magnetic shaft, and a sealing pad abutting the piston. The actuator is driven by the coils to move the piston. The piston has two notches being able to break a vacuum state, and can be pushed upward easily and efficiently to save electricity.

Abstract: Disclosed is a frame with connecting and positioning structure. The frame has a plurality of cross bars and vertical bars which are correspondingly connected through the connecting and positioning structure. The connecting and positioning structure includes: a fixing seat fixed to the end of the cross bar; a fitting groove on the fixing seat; one end of the fitting groove is extended toward the bottom edge of the cross bar to form an opening end; an embedded block is provided for embedding in the retaining groove of the vertical bar; a plug-in column is connected with the embedded block; a fitting convex portion is connected to the other end of the plug-in column, and the fitting convex portion and the plug-in column are correspondingly inserted into the fitting groove; and a fixing member penetrates through the embedded block, the fitting convex portion, and the plug-in column to connect them together.

Abstract: A solenoid valve includes a coil housing, a coil barrel and an actuator. The coil barrel is mounted in the coil housing, is coiled with multiple coils, and has a valve gate formed on a bottom of the coil barrel. The actuator is moveably mounted in the coil barrel and has a piston, a magnetic shaft, a spring mounted between the piston and the magnetic shaft, and a sealing pad abutting the piston. The actuator is driven by the coils to move the piston. The piston has two notches being able to break a vacuum state, and can be pushed upward easily and efficiently to save electricity.

Abstract: A computing device manages a router to route events between a plurality of computing device based on a manager configuration file. A manager engine is instantiated based on a manager engine definition and instantiates a manager ESPE based on a created manager ESP model. A router configuration file is created based on mapping information read from the manager configuration file that describes connectivity between an event publishing source and a source window of the manager ESPE. A router engine is instantiated based on the created router configuration file. A connector is started to receive an event based on the router configuration file. The event is received in the source window of the manager ESPE defined by the manager ESP model and processed based on the manager ESP model. A third computing device is selected by the router engine. The processed event is published to the third computing device.

Abstract: A passive wavelength division mobile fronthaul network system includes a central office end, a remote end, a trunk optical fiber; a first transport unit, configured to transport, on one end of the trunk optical fiber, detection light to the trunk optical fiber; a second transport unit, configured to transport, on the other end of the trunk optical fiber, the detection light from the trunk optical fiber to each branch of the remote end; and a reflector, deployed on an end of each branch of the remote end for reflecting the detection light. The first transport unit combines the detection light to the trunk optical fiber, the second transport unit transmits, on the remote end, the detection light from the trunk optical fiber to each branch of the remote end, and finally, the reflector returns the detection light along the original path.

Abstract: A method and a device for increasing a laser induced shock wave pressure. According to the method, plasmas (21) are generated by impinging an aluminium foil (20) using lasers; a high-voltage pulse electrode (22) discharges to the plasmas (21) to induce and form a photoelectric combined energy field and then high-temperature plasmas (21) having the characteristics of an ultra-high density and an ultra-high speed expansion are induced and generated; a surface to be processed is impacted by the high-temperature plasmas (21) in a restrained state; the laser induced shock wave pressure is increased substantially; the surface of a high-strength material is reinforced, and the strength, hardness, abrasion resistance and anti-fatigue performances of the high-strength material are improved. The device comprises a laser, the electrode (22), a high-voltage power supply (4), a discharging medium (12), a moving platform, etc.

Abstract: A first computing device manages a cluster of event stream processing (ESP) engines (ESPEs). A local ESP model is created based on information read from a manager configuration file that includes first connection information to connect to the second computing device and second connection information to connect the third computing device. An ESPE is instantiated on the first computing device based on the created local ESP model. The event block object is received from the second computing device in a first source window of the instantiated ESPE. A remote ESP model is deployed to a remote third computing device. The manager configuration file includes an indicator of the remote ESP model. The third computing device to receive the processed event block object is selected. The processed event block object is published to a second source window defined by the remote ESP model deployed to the third computing device.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.