Abstract: An electromagnetic apparatus for active intervention to a shape of a molten pool is provided. In the present invention, a workpiece is placed on stepped surfaces of a test bench. Upon power on, a metal rod rotates to generate a toroidal magnetic field centered on the metal rod, and the toroidal magnetic field acts on the molten pool to generate an induced current. The induced current generates Lorentz force under the action of the magnetic field, which acts perpendicularly on an outer surface of the molten pool, thereby changing the height, depth and width of the molten pool, and finally realizing the active intervention to the molten pool shape.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method. A a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: A cryogenic laser shock strengthening method and apparatus based on a laser-induced high temperature plasma technology includes: liquid nitrogen doped with absorber powder is irradiated using high power laser beams, to generate partial high temperature plasma, the liquid nitrogen quickly vaporizes and expands under the action of the high temperature plasma to form high-speed high-pressure air streams, and the high-speed high-pressure air streams shock a metal surface in a low temperature environment to implement the strengthening of the surface. In addition, continuous pressure accumulation of a vaporization cavity can be implemented by means of multiple laser pulses to further increase the shock wave pressure of a metal surface, thereby improving the surface strengthening effect of the metal surface.

Abstract: The present disclosure relates to a flash memory structure. The flash memory structure includes a first doped region and a second doped region disposed within a substrate. A select gate is disposed over the substrate between the first doped region and the second doped region. A floating gate is disposed over the substrate between the select gate and the first doped region, and a control gate is over the floating gate. The floating gate extends along multiple surfaces of the substrate.

Abstract: A mouse device includes a casing and a roller module. The roller module is installed within the casing. The roller module includes a roller wheel, a movable magnet, a first magnet and a second magnet. In response to a repulsive force between the first magnet and the movable magnet, the roller module is in a tactile feel mode. In response to an attractive force between the second magnet and the movable magnet, the roller module is in a smooth scrolling mode.

Abstract: An antenna array is provided, which may include a connection portion and a plurality of antenna units. The antenna units may be disposed on the two sides of the connection portion respectively. The proximal end of each of the antenna units may be connected to the connection portion and the distal end of one or more of the antenna units may be grounded. The length of each of the antenna units may be less than or equal to ¼ wavelength of the operating frequency of the antenna array, and the distance between any two adjacent antenna units may be less than or equal to ½ wavelength of the operating frequency of the antenna array.

Abstract: A network path selection method and a network node device using the same are disclosed. The network path selection method includes: determining whether a first uplink time parameter table is received from the first relay node device and whether a second uplink time parameter table is received from the second relay node device; when the first uplink time parameter table is received from the first relay node device and the second uplink time parameter table is received from the second relay node device, calculating a first estimated uplink time parameter according to the first uplink time parameter table and a second estimated uplink time parameter according to the second uplink time parameter table; and determining to connect to a gateway via one of the first relay node device and the second relay node device according to the first estimated uplink time parameter and the second estimated uplink time parameter.

Abstract: A network device including a main bridge, a first bridge, a controller, and an Ethernet port is provided. When the Ethernet port is connected to a mesh network, the processing unit performs the following steps: controlling the Ethernet port to transmit a first broadcast packet; when the Ethernet port receives a second broadcast packet, parsing the second broadcast packet to extract the packet path information to determine whether a path loop exists; determining, according to the Ethernet interface weight (EIW), the slave interface uplink weight (SIUW), and the master device weight (MW) carried by the first broadcast packet and the second broadcast packet, (1) whether the network device plays a master device role, (2) whether the bridge of the Ethernet port is set as the main bridge or the first bridge, and (3) whether the Ethernet port allows data transmission.

Abstract: An antenna array is provided, which may include a connection portion and a plurality of antenna units. The antenna units may be disposed on the two sides of the connection portion respectively. The proximal end of each of the antenna units may be connected to the connection portion and the distal end of one or more of the antenna units may be grounded. The length of each of the antenna units may be less than or equal to ¼ wavelength of the operating frequency of the antenna array, and the distance between any two adjacent antenna units may be less than or equal to ½ wavelength of the operating frequency of the antenna array.

Abstract: A robot arm including a first joint, a second joint, and a coupling element is provided. The first joint has a first inclined surface. The second joint is jointed to the first joint and has a second inclined surface. The coupling element has a third inclined surface and a fourth inclined surface opposite to the third inclined surface, wherein the third inclined surface contacts the first inclined surface, and the fourth inclined surface contacts the second inclined surface.

Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: The present invention relates to an epitaxial structure of N-face group III nitride, its active device, and its gate protection device. The epitaxial structure of N-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: A transmission system, a transmission device and a transmission path allocation method are provided. The transmission path allocation method is configured to transmit a plurality of data packets through at least two transmission paths. Each of the transmission paths has a send buffer. The transmission path allocation method includes the following steps. A transmission time length for each of the transmission paths is analyzed according to an output data variation of each of the send buffers. Each of the data packets is allocated to the transmission paths according to each of the transmission time lengths. A sequential code is attached to each of the data packets. Each of the data packets is transmitted.

Abstract: A mouse device includes a casing, a switch, a button, a travel distance adjustment and a knob structure. The button is exposed to a top side of the casing. A first end of the travel distance adjustment assembly is contacted with the button. A second end of the travel distance adjustment assembly includes an internal thread structure. The internal thread structure of the travel distance adjustment assembly is engaged with an external thread structure of the knob structure. While an operating part of the knob structure is rotated, the knob structure is not moved and the travel distance adjustment assembly is moved upwardly relative to the knob structure to push the force-exerted part upwardly. Consequently, a triggering speed of the switch is increased.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive pad region over a substrate; depositing a dielectric layer over the conductive pad region; forming a first passivation layer over the dielectric layer; etching the first passivation layer through the dielectric layer, thereby exposing a first area of the conductive pad region; forming a second passivation layer over the first area of the conductive pad region; and removing portions of the second passivation layer to expose a second area of the conductive pad region.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.

Abstract: A keyboard device includes a keyboard module and a palm rest module. The palm rest module is arranged beside a lateral side of the keyboard module, and supports a wrist of a user. The palm rest module includes a pedestal, a casing and an adjusting element. The casing is disposed on the pedestal. The adjusting element is arranged between the pedestal and the casing. A position of the casing relative to the pedestal is adjustable through the adjusting element. In a first usage state, the casing is moved toward the keyboard module or moved away from the keyboard module through the adjusting element. In a second usage state, the casing is rotated about the adjusting element and relative to the keyboard module, so that an included angle is formed between the casing and the lateral side of the keyboard module.

Abstract: A semiconductor device includes a substrate, a conductive pad region electrically coupled to the substrate, a first dielectric layer over the conductive pad region, and a passivation layer over the first dielectric layer, wherein the passivation layer includes a laterally-extending portion covering the first dielectric layer and a vertically-extending portion on a sidewall of the first dielectric layer. The laterally-extending portion and the vertically-extending portion of the passivation layer are joined along a vertically-extending boundary.

Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.