Abstract: A cooperative robotic arm system includes a first robotic arm, a second robotic arm and a controller. The first robotic arm has first working vector. The second robotic arm has second working vector. The controller is configured to: (1) control the first robotic arm and the second robotic arm to stop moving; (2) determine whether a first projection vector of the first working vector projected on a first coordinate axis and a second working vector projected on the first coordinate axis overlaps; (3) when they overlap, determine whether a third projection vector of the first working vector projected on a second coordinate axis and a fourth projection vector of the second working vector projected on the second coordinate axis overlap; and, (4). when they do no overlap, control a controlled-to-moved one of the first robotic arm and the second robotic arm to move along a reset path.

Abstract: A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

Abstract: A wireless communication system using wireless LAN channels for wireless communication is disclosed, comprising: master access point, slave access points, and computing unit. First, the master access point creates a collision record table and a usage time record table. After that, the master access point updates the collision record table and usage time record table based on the usage information, and transmits the collision record table and usage time record table to the slave access points. The computing unit generates the channel collision probability through the number of collisions, and calculates the usage weight of the dynamic frequency selection channel through the channel collision probability. Finally, the wireless communication system automatically selects the wireless LAN channels of the master access point and the slave access points according to the usage weight and usage time record table. As such, the wireless communication system has high efficiency and low delay.

Abstract: A key structure includes a frame member, a keycap and a stabilizer bar. The keycap includes first and second clamping members. The first clamping member includes a first upper stopping part, a first lower stopping part and a first lateral stopping part. The second clamping member includes a second upper stopping part, a second lower stopping part and a second lateral stopping part. The stabilizer bar includes a shaft part, a first leg part and a second leg part. The shaft part is received within a hook of the frame member. The first leg part is received within the first clamping member. The second leg part is received within the second clamping member. The first lateral stopping part is pushed against the first leg part along a first direction. The second lateral stopping part is pushed against the second leg part along a second direction.

Abstract: A network path selection method and a network node device using the same are disclosed. The network path selection method includes: determining whether a first uplink time parameter table is received from the first relay node device and whether a second uplink time parameter table is received from the second relay node device; when the first uplink time parameter table is received from the first relay node device and the second uplink time parameter table is received from the second relay node device, calculating a first estimated uplink time parameter according to the first uplink time parameter table and a second estimated uplink time parameter according to the second uplink time parameter table; and determining to connect to a gateway via one of the first relay node device and the second relay node device according to the first estimated uplink time parameter and the second estimated uplink time parameter.

Abstract: The present application relates to an epitaxial structure of Ga-face group III nitride and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

Abstract: This disclosure is related to a non-contact tool center point calibration method for a robot arm, and the method comprises: obtaining a coordinate transformation relationship between a flange surface of the robot arm and cameras by a hand-eye calibration algorithm; constructing a space coordinate system by a stereoscopic reconstruction method; actuating a replaceable member fixed with the flange surface to present postures in a union field of view of the cameras sequentially, recording feature coordinates of the replaceable member in the space coordinate system, and recording flange surface coordinates which is under the postures in the space coordinate system; obtaining a transformation relationship between a tool center point and the flange surface; and updating the transformation relationship into a control program of the robot arm. Moreover, the disclosure further discloses a calibration device performing the calibration method and a robot arm system having the calibration function.

Abstract: A method includes depositing a first dielectric layer covering an electrical connector, depositing a second dielectric layer over the first dielectric layer, and performing a first etching process to etch-through the second dielectric layer and the first dielectric layer. An opening is formed in the first dielectric layer and the second dielectric layer to reveal the electrical connector. A second etching process is performed to laterally etch the first dielectric layer and the second dielectric layer. An isolation layer is deposited to extend into the opening. The isolation layer has a vertical portion and a first horizontal portion in the opening, and a second horizontal portion overlapping the second dielectric layer. An anisotropic etching process is performed on the isolation layer, with the vertical portion of the isolation layer being left in the opening.

Abstract: The present disclosure relates to a method of forming a flash memory structure. The method includes forming a sacrificial material over a substrate, and forming a plurality of trenches extending through the sacrificial material to within the substrate. A dielectric material is formed within the plurality of trenches. The dielectric material is selectively etched, according to a mask that is directly over the dielectric material, to form depressions along edges of the plurality of trenches. The sacrificial material between neighboring ones of the depressions is removed to form a floating gate recess. A floating gate material is formed within the floating gate recess and the neighboring ones of the depressions.

Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: A wireless network bridging method and a wireless network transmission device using the same are provided. The wireless network bridging method includes the following steps. A first wireless network transmission device sets a downlink channel and at least one connection channel connected to at least one user equipment. A second wireless network transmission device sets an uplink channel. The second wireless network transmission device sets a downlink channel according to a channel information of the first wireless network transmission device. The downlink channel and the uplink channel of the second wireless network transmission device are different. The second wireless network transmission device sets at least one connection channel connected to at least one user equipment according to the channel information of the first wireless network transmission device. The connection channels of the second wireless network transmission device and the first wireless network transmission device are different.

Abstract: A roller mouse includes a casing, a wheel module, a swingable assembly and an adjusting element. The wheel module includes a wheel element. The swingable assembly is fixed on the wheel module, and located near the wheel element. When the adjusting element is in a first position, the swingable assembly is contacted with the wheel element, so that the wheel module is in a first clicking mode. When the adjusting element is moved to a second position, the swingable assembly is pushed by the adjusting element, and the swingable assembly is separated from the wheel element, so that the wheel module is in a second clicking mode.

Abstract: A grinding and polishing simulation method, a grinding and polishing simulation system and a grinding and polishing process transferring method. The grinding and polishing simulation method includes the following steps. A sensing information of a grinding and polishing apparatus when grinding or polishing a workpiece is obtained. A plurality of model parameters is identified according to the sensing information. At least one quality parameter is calculated according to a machining path, a plurality of process parameters and the plurality of model parameters.

Abstract: A semiconductor device includes a substrate, a fin structure, an insulating layer, a select gate, a memory gate, and a charge trapping layer. The fin structure includes a first portion and a second extend from the substrate. Each of the first portion and the second portion includes a first sidewall and a second sidewall, and the second sidewalls are between the first sidewalls. The insulating layer is disposed between the second sidewalls of the first and second portions. The select gate and the memory gate extend across the fin structure and the insulating layer. The charge trapping layer is disposed between the memory gate and the select gate, between the memory gate and the insulating layer, and between the memory gate and the fin structure, and the second sidewalls of the first and second portions are free from in contact with the charge trapping layer.

Abstract: An automatic bio-specimen inspection system includes an inspection device, an image processing module, a spatial learning module, a path generation module and a motion device. The inspection device is used to approach an inspection site for performing a bio-specimens collection and/or inspection. The image processing module is used to capture and process a plurality of 2D images of the inspection site. The spatial learning module is used to generate a 3D spatial information of the inspection site according to the 2D images. The path generation module is used to generate an inspection path information based on the 3D spatial information. The motion device is used to move the inspection device to the inspection site according to the inspection path information for performing the inspection operation.

Abstract: An electromagnetic apparatus for active intervention to a shape of a molten pool is provided. In the present invention, a workpiece is placed on stepped surfaces of a test bench. Upon power on, a metal rod rotates to generate a toroidal magnetic field centered on the metal rod, and the toroidal magnetic field acts on the molten pool to generate an induced current. The induced current generates Lorentz force under the action of the magnetic field, which acts perpendicularly on an outer surface of the molten pool, thereby changing the height, depth and width of the molten pool, and finally realizing the active intervention to the molten pool shape.

Abstract: A driver includes a semiconductor chip, a bridge rectifier, and a current driver. The semiconductor chip includes a rectifying diode and a constant current source formed thereon. The bridge rectifier includes the rectifying diode. The current driver includes the first constant current source to provide a constant current.