Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Abstract: A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Abstract: A method of dynamic frequency selection includes receiving setting information of a WI-FI unit input by an input unit, controlling the WI-FI unit in a STA working mode to switch different channels to scan an available access point AP with dynamic frequency selection within one channel when receiving the setting information of setting the WI-FI unit to work in an AP working mode and the STA working mode simultaneously, controlling the WI-FI unit in the AP working mode to switch to the channel within which the WI-FI unit in the STA working mode scans the available access point AP when the WI-FI unit in the STA working mode scans the available access point AP, and controlling the WI-FI unit in the AP working mode to communicate with a terminal device via the switched access point AP.

Abstract: The disclosure relates to a resin composition, comprising an epoxy resin, a high molecular weight polyetheramine and an amine-terminated acrylonitrile rubber. Various products can be made from the resin composition, such as prepregs, laminates, printed circuit boards or rigid-flex boards, in which one, multiple or all of the following properties can be met: low resin flow, low dust weight loss, high peel strength at room temperature and at high temperature, low moisture absorption rate, and better varnish stability.

Abstract: A method of dynamic frequency selection includes receiving setting information of a WI-FI unit input by an input unit, controlling the WI-FI unit in a STA working mode to switch different channels to scan an available access point AP with dynamic frequency selection within one channel when receiving the setting information of setting the WI-FI unit to work in an AP working mode and the STA working mode simultaneously, controlling the WI-FI unit in the AP working mode to switch to the channel within which the WI-FI unit in the STA working mode scans the available access point AP when the WI-FI unit in the STA working mode scans the available access point AP, and controlling the WI-FI unit in the AP working mode to communicate with a terminal device via the switched access point AP.

Abstract: A display panel includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of pixel units, a plurality of transmitting lines, and a driving chip. The transmitting lines are disposed on the substrate and electrically connected to the second signal lines. The driving chip includes a plurality of first pins, a plurality of second pins, and a driving circuit. The first pins are electrically connected to the first signal lines, and the second pins are electrically connected to the transmitting lines. The first pins and the second pins are disposed alternately and evenly, such that the first signal lines and the transmitting lines do not intersect each other. The transmitting lines are disposed on the substrate evenly.

Abstract: A method of dynamic frequency selection includes receiving setting information of a WI-FI unit input by an input unit, controlling the WI-FI unit in a STA working mode to switch different channels to scan an available access point AP with dynamic frequency selection within one channel when receiving the setting information of setting the WI-FI unit to work in an AP working mode and the STA working mode simultaneously, controlling the WI-FI unit in the AP working mode to switch to the channel within which the WI-FI unit in the STA working mode scans the available access point AP when the WI-FI unit in the STA working mode scans the available access point AP, and controlling the WI-FI unit in the AP working mode to communicate with a terminal device via the switched access point AP.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: A method of dynamic frequency selection includes receiving setting information of a WI-FI unit input by an input unit, controlling the WI-FI unit in a STA working mode to switch different channels to scan an available access point AP with dynamic frequency selection within one channel when receiving the setting information of setting the WI-FI unit to work in an AP working mode and the STA working mode simultaneously, controlling the WI-FI unit in the AP working mode to switch to the channel within which the WI-FI unit in the STA working mode scans the available access point AP when the WI-FI unit in the STA working mode scans the available access point AP, and controlling the WI-FI unit in the AP working mode to communicate with a terminal device via the switched access point AP.

Abstract: A pixel array including first and second signal lines, an active device, a pixel electrode and selection lines is provided. The second signal lines are intersected with the first signal lines to drive the active device, and the pixel electrode is connected to the active device. The selection lines are electrically insulated to the second signal lines and intersected with the first signal lines, where at least one selective line is disposed between the adjacent two second signal lines. An amount ratio of the first signal lines and the selection lines is a1/a2, where a1?a2, and when a1 and a2 are mutually prime numbers, the selection lines are divided into a plurality of groups, and each group includes a1 selection lines electrically connected to the first signal lines, and (a2?a1) selection lines not electrically connected to the first signal lines.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

Abstract: A display panel and a manufacturing method thereof are disclosed herein. The display panel includes a substrate, a peripheral circuit, a plurality of pixel electrodes, a plurality of switches, and an insulating layer. The substrate has a display region and a non-display region. At least a portion of the peripheral circuit is located on the display region of the substrate. The pixel electrodes are located on the display region of the substrate. The switches are respectively and electrically connected to the pixel electrodes, configured to be respectively switched on according to a plurality of scan signals, so as to transmit a plurality of data signals to the pixel electrodes. The insulating layer is located between the peripheral circuit and the pixel electrodes, and is configured to prevent the peripheral circuit from interfering with the pixel electrodes.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.