Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A method of dynamic frequency selection includes receiving setting information of a WI-FI unit input by an input unit, controlling the WI-FI unit in a STA working mode to switch different channels to scan an available access point AP with dynamic frequency selection within one channel when receiving the setting information of setting the WI-FI unit to work in an AP working mode and the STA working mode simultaneously, controlling the WI-FI unit in the AP working mode to switch to the channel within which the WI-FI unit in the STA working mode scans the available access point AP when the WI-FI unit in the STA working mode scans the available access point AP, and controlling the WI-FI unit in the AP working mode to communicate with a terminal device via the switched access point AP.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

Abstract: A pixel array including first and second signal lines, an active device, a pixel electrode and selection lines is provided. The second signal lines are intersected with the first signal lines to drive the active device, and the pixel electrode is connected to the active device. The selection lines are electrically insulated to the second signal lines and intersected with the first signal lines, where at least one selective line is disposed between the adjacent two second signal lines. An amount ratio of the first signal lines and the selection lines is a1/a2, where a1?a2, and when a1 and a2 are mutually prime numbers, the selection lines are divided into a plurality of groups, and each group includes a1 selection lines electrically connected to the first signal lines, and (a2?a1) selection lines not electrically connected to the first signal lines.

Abstract: A display panel and a manufacturing method thereof are disclosed herein. The display panel includes a substrate, a peripheral circuit, a plurality of pixel electrodes, a plurality of switches, and an insulating layer. The substrate has a display region and a non-display region. At least a portion of the peripheral circuit is located on the display region of the substrate. The pixel electrodes are located on the display region of the substrate. The switches are respectively and electrically connected to the pixel electrodes, configured to be respectively switched on according to a plurality of scan signals, so as to transmit a plurality of data signals to the pixel electrodes. The insulating layer is located between the peripheral circuit and the pixel electrodes, and is configured to prevent the peripheral circuit from interfering with the pixel electrodes.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

Abstract: A display panel includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of pixel units, a plurality of transmitting lines, and a driving chip. The transmitting lines are disposed on the substrate and electrically connected to the second signal lines. The driving chip includes a plurality of first pins, a plurality of second pins, and a driving circuit. The first pins are electrically connected to the first signal lines, and the second pins are electrically connected to the transmitting lines. The first pins and the second pins are disposed alternately and evenly, such that the first signal lines and the transmitting lines do not intersect each other. The transmitting lines are disposed on the substrate evenly.

Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

Abstract: An electrophoretic display apparatus is suitable for being electrically connected to an external circuit and includes a drive array substrate, an electrophoretic display film and a first optical adhesive layer. The electrophoretic display film is disposed on the drive array substrate and includes a flexible substrate and a display medium layer. The flexible substrate has a disposed region and a bonding region. The external circuit is disposed between the flexible substrate and the drive array substrate, located in the bonding region and extends outside the drive array substrate. The display medium layer is disposed between the flexible substrate and the drive array substrate and located in the disposed region. The first optical adhesive layer is disposed between the display medium layer and the drive array substrate. A thickness of the external circuit is substantially a sum of that of the display medium layer and the first optical adhesive layer.

Abstract: A display panel and a manufacturing method thereof are disclosed herein. The display panel includes a substrate, a peripheral circuit, a plurality of pixel electrodes, a plurality of switches, and an insulating layer. The substrate has a display region and a non-display region. At least a portion of the peripheral circuit is located on the display region of the substrate. The pixel electrodes are located on the display region of the substrate. The switches are respectively and electrically connected to the pixel electrodes, configured to be respectively switched on according to a plurality of scan signals, so as to transmit a plurality of data signals to the pixel electrodes. The insulating layer is located between the peripheral circuit and the pixel electrodes, and is configured to prevent the peripheral circuit from interfering with the pixel electrodes.

Abstract: A display panel includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of pixel units, a plurality of transmitting lines, and a driving chip. The transmitting lines are disposed on the substrate and electrically connected to the second signal lines. The driving chip includes a plurality of first pins, a plurality of second pins, and a driving circuit. The first pins are electrically connected to the first signal lines, and the second pins are electrically connected to the transmitting lines. The first pins and the second pins are disposed alternately and evenly, such that the first signal lines and the transmitting lines do not intersect each other. The transmitting lines are disposed on the substrate evenly.

Abstract: An electronic paper display device includes a substrate, a protection sheet, an e-ink (electronic-ink) layer, a first electrode layer, and a second electrode layer. The e-ink layer is located between the substrate and the protection sheet. The e-ink layer has a display area and a surrounding area. The display area is surrounded by the surrounding area. The first electrode layer is located between the e-ink layer and the substrate, and the first electrode layer is corresponding to the display area in position. The second electrode layer is located between the e-ink layer and the substrate, and the second electrode layer is corresponding to the surrounding area in position.

Abstract: Provided is a method of forming a pattern for an integrated circuit. The method includes forming a first layer over a substrate, wherein the first layer's etch rate is sensitive to a radiation, such as an extreme ultraviolet (EUV) radiation or an electron beam (e-beam). The method further includes forming a resist layer over the first layer and exposing the resist layer to the radiation for patterning. During the exposure, various portions of the first layer change their etch rate in response to an energy dose of the radiation received therein. The method further includes developing the resist layer, etching the first layer, and etching the substrate to form a pattern. The radiation-sensitivity of the first layer serves to reduce critical dimension variance of the pattern.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.

Abstract: A display panel and a manufacturing method thereof are disclosed herein. The display panel includes a substrate, a peripheral circuit, a plurality of pixel electrodes, a plurality of switches, and an insulating layer. The substrate has a display region and a non-display region. At least a portion of the peripheral circuit is located on the display region of the substrate. The pixel electrodes are located on the display region of the substrate. The switches are respectively and electrically connected to the pixel electrodes, configured to be respectively switched on according to a plurality of scan signals, so as to transmit a plurality of data signals to the pixel electrodes. The insulating layer is located between the peripheral circuit and the pixel electrodes, and is configured to prevent the peripheral circuit from interfering with the pixel electrodes.