Abstract: Embodiments of the disclosure, there is provided a method, a system for adjusting the memory, and a semiconductor device. The method for adjusting the memory includes: acquiring a mapping relationship between a temperature of a transistor, an equivalent width-length ratio of a sense amplifier transistor in a sense amplifier and an actual time at which the data is written into the memory; acquiring a current temperature of the transistor; and adjusting the equivalent width-length ratio, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted equivalent width-length ratio is within a preset writing time.

Abstract: Memory includes at least one memory chip, a command port and a data port. Each memory chip includes at least one channel. Each channel includes multiple banks that are configured to perform read and write operations alternately. The command port is configured to receive command signals at a preset edge of a command clock, and the command signals are configured to control the read and write operations of the banks. The data port is configured to receive data signals to be written into the banks or transmit data signals at preset edges of a data clock. The command port includes a row address port and a column address port. The row address port is configured to receive a row address signal at a position of a target memory cell, and the column address port is configured to receive a column address signal at a position of the target memory cell.

Abstract: A method for adjusting the memory includes: acquiring a mapping relationship between a temperature of a transistor, a gate voltage of the transistor, and an actual time at which data is written into the memory; acquiring a current temperature of the transistor; and adjusting the gate voltage, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted gate voltage is within a preset writing time.

Abstract: A memory includes: a control chip; and a plurality of storage chips, in which the plurality of storage chips are electrically connected with the control chip via a common communication channel, the plurality of storage chips include a first storage chip set and a second storage chip set, the storage chips in the first storage chip set are configured to perform information interaction with the control chip by adopting a first clock signal, the storage chips in the second storage chip set are configured to perform information interaction with the control chip by adopting a second clock signal, and phase of the first clock signal is different from phase of the second clock signal.

Abstract: A method for regulating the memory includes operations as follows. A mapping relationship among temperatures of a transistor, body bias voltages of the transistor, and data writing time of the memory is acquired, a current temperature of the transistor is acquired, the body bias voltage is regulated based on the current temperature and the mapping relationship, to enable the data writing time corresponding to the regulated body bias voltage to be within a preset writing time.

Abstract: A memory circuit device and a memory test method are disclosed. The memory circuit device includes: a memory cell array, including storage lines and redundant storage lines; and a redundant decoder control circuit, configured to receive an address of a failed storage line from a testing device and activate a corresponding redundant storage line based on the address of the failed storage line, so that the redundant storage line can replace and store data in the failed storage line, wherein the address of the failed storage line is determined while testing operation status of the storage lines in the memory cell array. Embodiments of the present invention can improve repair efficiency of the memory circuit device through activating the associated redundant storage line by the redundant decoder control circuit based on the address of the failed storage line rather than under the control of an external controller.

Abstract: A chip and a chip test system are provided by the present invention. The chip includes a decoding module and a test mode control module, and decodes an input signal to determine whether the input signal is a pre-activation signal or not. If the input signal is decoded into a pre-activation signal, then the chip will respond to a subsequent test signal; otherwise, the chip will not respond to any subsequent test signal. According to the present invention, by configuring a pre-activation signal, the number of chips to be simultaneously connected to and individually tested by the test equipment can be increased, without the need to occupy more input/output (I/O) interfaces.

Abstract: The present invention provides a chip test method, apparatus, device, and system. The chip test system may include: a test equipment, including n chip selection signal lines, m sets of first signal lines, and m*n sets of second signal lines; and m*n chip test sites, wherein each chip test site may be coupled to one of the n chip selection signal lines and one of the m sets of first signal lines, each of the m*n chip test sites may correspond to a unique combination of a chip selection signal line and a first signal line coupled thereto, and each chip test site may be correspondingly coupled to one of the m*n sets of second signal lines. According to an embodiment of the present invention, the limited pins of a test equipment may be used to implement individual control of multiple chips.

Abstract: An electronic device and a semiconductor package structure are provided. The device includes a plurality of semiconductor dies stacked vertically over each other and a power supply system. The semiconductor dies are stacked over the power supply system. The power supply system includes: a voltage generating circuit configured to generate at least one voltage. The at least one voltage is provided to the plurality of semiconductor dies through a power interconnecting structure. The semiconductor package structure includes a package substrate; at least one semiconductor die disposed on the package substrate; and the power supply system disposed on the package substrate. The at least one semiconductor die may include a plurality of semiconductor dies vertically stacked on the package substrate.

Abstract: An electronic device and a semiconductor package structure are provided. The electronic device includes a plurality of semiconductor dies stacked vertically over each other and a power supply system. The plurality of semiconductor dies are stacked over the power supply system, and the power supply system includes: a voltage generating circuit configured to generate at least one voltage; and a die enabling circuit configured to generate a die enable signal according to the at least one voltage. The at least one voltage is provided to the plurality of semiconductor dies through a power interconnecting structure, and the die enable signal is configured to enable synchronous input of the at least one voltage to the plurality of semiconductor dies.

Abstract: A wafer stacking method and structure are provided. The wafer stacking method includes: providing a first wafer, wherein an upper surface of the first wafer includes a first bonding pad configured to connect to a first signal; fabricating a first redistribution layer (RDL) on the first wafer, comprising a first wiring electrically connected to the first bonding pad, and the first wiring includes a first landing pad; bonding a second wafer on the first RDL, wherein the second wafer includes a second bonding pad configured to connect the first signal and located corresponding to the first bonding pad; fabricating a first through silicon via (TSV) with a bottom connected to the first landing pad at a position corresponding to the first landing pad; and fabricating a second RDL on the second wafer to connect the second bonding pad and the first TSV. This wafer stacking method improves the manufacturing yield.

Abstract: The present invention provides a method, device, and system for testing devices under testing (DUTs). The method comprises: sending a scan activated signal and a synchronous clock signal via the second signal line, and sending a first preset signal via the serial signal line, wherein each bit of the first preset signal is transmitted to a corresponding scan chain unit in a sequence of serial connection of the plurality of scan chain units with according to the synchronous clock signal, the corresponding scan chain unit is one of the plurality of scan chain units connected serially and coupled to the plurality of DUTs via a third signal line; sending a scan deactivated signal via the second signal line, to deactivate the scan chain units from identifying and receiving the first preset signal; and sending a second preset signal via the second signal line, and sending a test signal via the first signal line.

Abstract: A system-in-package (SiP) assembly is disclosed, which comprises: a dynamic memory; a non-volatile memory configured to store a scrambling algorithm for the dynamic memory; and a logic processor connected to the dynamic memory and the non-volatile memory. The logic processor is configured to generate test information, scramble the test information based on the scrambling algorithm stored in the non-volatile memory and transmit the scrambled test information to the dynamic memory. The dynamic memory, the non-volatile memory, and logic processor are integrated and packaged in a single package.

Abstract: A wafer stacking method and structure are provided. The wafer stacking method includes: providing a first wafer having an upper surface comprising a first bonding pad configured to connect to a first signal; fabricating a first lower redistribution layer (RDL) and a first upper RDL on the first wafer, with the first lower RDL including a first wiring connected to the first bonding pad, the first upper RDL including a second wiring connected to the first wiring, and the second wiring having a first landing pad; bonding a second wafer on the first upper RDL, wherein an upper surface of the second wafer includes a second bonding pad configured to connect to a second signal and located corresponding to the first bonding pad; and fabricating a first through silicon via (TSV) connected to the first landing pad. The wafer stacking method improves the manufacturing yield of a die.

Abstract: A memory circuit device and a memory test method are disclosed. The memory circuit device includes: a memory cell array, including storage lines and redundant storage lines; and a redundant decoder control circuit, configured to receive an address of a failed storage line from a testing device and activate a corresponding redundant storage line based on the address of the failed storage line, so that the redundant storage line can replace and store data in the failed storage line, wherein the address of the failed storage line is determined while testing operation status of the storage lines in the memory cell array. Embodiments of the present invention can improve repair efficiency of the memory circuit device through activating the associated redundant storage line by the redundant decoder control circuit based on the address of the failed storage line rather than under the control of an external controller.

Abstract: The present disclosure provides a memory device, wherein: an address latch can output a block selection control signal according to a block selection enable signal; a test mode selection unit can output a test mode selection signal according to a test mode selection instruction signal; a block selection unit outputs a block selection signal according to a mode selection signal and a block selection enable signal; when the memory enters a first test mode according to the test mode selection signal, an output buffer disables some of the input/output ports, and sequentially outputs the first input/output data and the second input/output data through un-disabled the input/output ports. The memory device according to the present disclosure can occupy less input/output ports of a test machine.

Abstract: Disclosed is a dual inline memory module with temperature-sensing scenario modes. A plurality of volatile memory components and an EEPROM component are disposed on a module board. A plurality of LED components and a scenario-lighting controller are disposed at a radiant side of the module board. A light bar is located at the radiant side of the module board without direct installing relationship. A plurality of clamping-type heat spreaders are fastened to one another in a manner that the light bar is tightly clamped. Therein, the power of the scenario-lighting controller component is shared and linked with the power supply system of the LED components and the signals of the scenario-lighting controller component are shared and linked with the signal connection system of the EEPROM component.

Abstract: Disclosed is a dual inline memory module with temperature-sensing scenario modes. A plurality of volatile memory components and an EEPROM component are disposed on a module board. A plurality of LED components and a scenario-lighting controller are disposed at a radiant side of the module board. A light bar is located at the radiant side of the module board without direct installing relationship. A plurality of clamping-type heat spreaders are fastened to one another in a manner that the light bar is tightly clamped. Therein, the power of the scenario-lighting controller component is shared and linked with the power supply system of the LED components and the signals of the scenario-lighting controller component are shared and linked with the signal connection system of the EEPROM component.

Abstract: Disclosed is a wafer-level stacked chip assembly, comprising a plurality of chip layers vertically stacked together with vertically electrical interconnections between the adjacent chip layers realized by TSVs (Through Silicon Via). Each chip layer includes a switching mechanism for selectively bypassing chip coding sequence to deactivate failed IC area and its chip coding sequence, thereby the interconnection relationship among the chip layers can be re-defined and the function and chip code of the failed IC area can be deactivated. Accordingly, any known failed chip in the wafer-level stacking chip assembly can be controlled as a dummy chip to realize the wafer-level chip stacking of non-known good dices with exclusion of failed chip(s).

Abstract: Disclosed is a wafer-level stacked chip assembly, comprising a plurality of chip layers vertically stacked together with vertically electrical interconnections between the adjacent chip layers realized by TSVs (Through Silicon Via). Each chip layer includes a switching mechanism for selectively bypassing chip coding sequence to deactivate failed IC area and its chip coding sequence, thereby the interconnection relationship among the chip layers can be re-defined and the function and chip code of the failed IC area can be deactivated. Accordingly, any known failed chip in the wafer-level stacking chip assembly can be controlled as a dummy chip to realize the wafer-level chip stacking of non-known good dices with exclusion of failed chip(s).