Abstract: An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Abstract: An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

Abstract: An optical transmitter including two reflective regions formed at two opposite ends of an interference region along a first direction and at least three electrodes electrically coupled to the interference region, where the amount of electrical carriers inside the interference region can be modulated by changing the relative electrical fields among the three electrodes, so that the amount of photons generated inside the interference region can be modulated and resonant along the first direction and emit along a second direction that is different from the first direction.

Abstract: Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

Abstract: A grating based optical transmitter includes a light source region coupled to an interference region, two reflective regions on both sides of the interference region, and one or several gratings interacting with the interference light wave in the interference region causing a vertical emission. Two electrodes are used to inject electrical carriers, and a third electrode can be added to modulate the electrical carrier density recombined in the light source region. Compared to conventional edge-emitting laser with two electrodes, the grating-based optical transmitter in this invention largely reduces the packaging cost and complexity due to the vertical emission, and largely enhances the modulation bandwidth due to the three-terminal configuration.

Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.

Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain examples of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a low-reflectivity mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.

Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light is reflected back by the second mirror, to be zero or near zero.

Abstract: Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

Abstract: A wireless interactive system applied between an electronic device and a trigger is revealed. The wireless interactive system includes an electronic device and a trigger. The electronic device such as a smart phone, a gateway, etc. is connected to the trigger wirelessly by a wireless network such as BLE, WiFi, or Zigbee. Users can define at least one prior event according to their requirements by software program built-in the electronic device. The trigger is a push-button carried by a user. Thus the user can activate the electronic device wirelessly to perform the defined prior event by easy operation of the push-button. Thereby the user can dynamically change interactions between the electronic device and the trigger according to his needs.

Abstract: Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

Abstract: An apparatus including a waveguide region configured to guide light propagating along a first direction; a reflector region configured to reflect incident light; an interference region formed between the waveguide region and the reflector region, the interference region configured to confine at least a portion of interference light formed by the incident light and the reflected incident light; and a grating region including a grating formed on a region confining at least a portion of the interference light, the grating configured to couple at least a portion of the light along a second direction that is different from the first direction.

Abstract: A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler. In some embodiments, the device may include an optical waveguide to transmit light input from a light source. The optical waveguide may include a semiconductor layer, having a trench with one facet that comprises an edge formed under an approximately 45 degree angle and another facet formed substantially normal to the semiconductor layer. The edge may interface with another medium to form a mirror to receive inputted light and reflect received light substantially perpendicularly to propagate the received light. Other embodiments may be described and/or claimed.

Abstract: An apparatus including a waveguide region configured to guide light propagating along a first direction; a reflector region configured to reflect incident light; an interference region formed between the waveguide region and the reflector region, the interference region configured to confine at least a portion of interference light formed by the incident light and the reflected incident light; and a grating region including a grating formed on a region confining at least a portion of the interference light, the grating configured to couple at least a portion of the light along a second direction that is different from the first direction.

Abstract: A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization.

Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.

Abstract: An apparatus for forming a three-dimensional (3D) object includes a first light source unit comprising at least one first light source arranged on a first plane; a second light source unit comprising at least one second light source arranged on a second plane, where the second plane is non-parallel to the first plane; a controller operatively connected to the first light source unit and the second light source unit and configured to control the first light source and the second light source to emit energy beams at predetermined power levels. The energy beams from the first light source and the second light source meet at a place to provide a combined energy sufficient to change a material property of a material at the place.