Patents by Inventor Shu-Ru Wang
Shu-Ru Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9859282Abstract: A high-density semiconductor structure includes a substrate, a bit line and a first memory unit. The bit line, disposed on the substrate, has a first side and a second side. The first memory unit includes a first transistor, a first capacitor, a second transistor and a second capacitor. The first transistor disposed on the substrate has a first terminal and a second terminal. The first terminal connects the bit line. The first capacitor connects the second terminal of the first transistor. The second transistor disposed on the substrate has a third terminal and a fourth terminal. The third terminal connects the bit line. The second capacitor connects the fourth terminal of the second transistor. The first capacitor and the second capacitor are separated from the bit line in a direction perpendicular to an extending direction of the bit line and located on the first side of the bit line.Type: GrantFiled: September 29, 2016Date of Patent: January 2, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Ching-Cheng Lung, Yu-Tse Kuo, Chun-Hsien Huang, Shu-Ru Wang
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Patent number: 9859170Abstract: A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer.Type: GrantFiled: February 16, 2017Date of Patent: January 2, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Wei-Cyuan Lo, Ming-Jui Chen, Chia-Lin Lu, Jia-Rong Wu, Yi-Hui Lee, Ying-Cheng Liu, Yi-Kuan Wu, Chih-Sen Huang, Yi-Wei Chen, Tan-Ya Yin, Chia-Wei Huang, Shu-Ru Wang, Yung-Feng Cheng
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Publication number: 20170373073Abstract: A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein the fin structures include a plurality of active fins and a plurality of dummy fins, each PG (pass-gate) FinFET shares at least one of the active fins with a PD (pull-down) FinFET, and at least one dummy fin is disposed between the two active fins having two adjacent pull-up FinFETs thereover in a static random-access memory cell. At least a part of the dummy fins are removed. The present invention also provides a static random-access memory (SRAM) cell array formed by said method.Type: ApplicationFiled: August 25, 2017Publication date: December 28, 2017Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Publication number: 20170317091Abstract: A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein the fin structures include a plurality of active fins and a plurality of dummy fins, each PG (pass-gate) FinFET shares at least one of the active fins with a PD (pull-down) FinFET, and at least one dummy fin is disposed between the two active fins having two adjacent pull-up FinFETs thereover in a static random-access memory cell. At least a part of the dummy fins are removed. The present invention also provides a static random-access memory (SRAM) cell array formed by said method.Type: ApplicationFiled: June 27, 2017Publication date: November 2, 2017Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Publication number: 20170317090Abstract: A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein the fin structures include a plurality of active fins and a plurality of dummy fins, each PG (pass-gate) FinFET shares at least one of the active fins with a PD (pull-down) FinFET, and at least one dummy fin is disposed between the two active fins having two adjacent pull-up FinFETs thereover in a static random-access memory cell. At least a part of the dummy fins are removed. The present invention also provides a static random-access memory (SRAM) cell array formed by said method.Type: ApplicationFiled: June 27, 2017Publication date: November 2, 2017Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Patent number: 9799650Abstract: A semiconductor layout structure includes at least a first signal line and a pair of Vss lines. The first signal line and the pair of Vss lines are extended along a first direction, and the Vss lines are arranged along a second direction. The first direction and the second direction are perpendicular to each other. The Vss lines are arranged at respective two sides of the first signal line.Type: GrantFiled: February 14, 2016Date of Patent: October 24, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Publication number: 20170294429Abstract: A semiconductor layout structure includes a substrate comprising a cell edge region and a dummy region abutting thereto, a plurality of dummy contact patterns disposed in the dummy region and arranged along a first direction, and a plurality of dummy gate patterns disposed in the dummy region and arranged along the first direction. The dummy contact patterns and the dummy gate patterns are alternately arranged. Each dummy contact pattern includes an inner dummy contact proximal to the cell edge region and an outer dummy contact distal to the cell edge region, and the inner dummy contact and the outer dummy contact are arranged along a second direction perpendicular to the first direction and spaced apart from each other by a first gap.Type: ApplicationFiled: April 7, 2016Publication date: October 12, 2017Inventors: Chun-Hsien Huang, Yung-Feng Cheng, Yu-Tse Kuo, Chia-Wei Huang, Li-Ping Huang, Shu-Ru Wang
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Patent number: 9786647Abstract: A semiconductor layout structure includes a substrate comprising a cell edge region and a dummy region abutting thereto, a plurality of dummy contact patterns disposed in the dummy region and arranged along a first direction, and a plurality of dummy gate patterns disposed in the dummy region and arranged along the first direction. The dummy contact patterns and the dummy gate patterns are alternately arranged. Each dummy contact pattern includes an inner dummy contact proximal to the cell edge region and an outer dummy contact distal to the cell edge region, and the inner dummy contact and the outer dummy contact are arranged along a second direction perpendicular to the first direction and spaced apart from each other by a first gap.Type: GrantFiled: April 7, 2016Date of Patent: October 10, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Hsien Huang, Yung-Feng Cheng, Yu-Tse Kuo, Chia-Wei Huang, Li-Ping Huang, Shu-Ru Wang
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Patent number: 9728541Abstract: A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein the fin structures include a plurality of active fins and a plurality of dummy fins, each PG (pass-gate) FinFET shares at least one of the active fins with a PD (pull-down) FinFET, and at least one dummy fin is disposed between the two active fins having two adjacent pull-up FinFETs thereover in a static random-access memory cell. At least a part of the dummy fins are removed. The present invention also provides a static random-access memory (SRAM) cell array formed by said method.Type: GrantFiled: June 17, 2016Date of Patent: August 8, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Publication number: 20170200717Abstract: A semiconductor layout structure includes at least a first signal line and a pair of Vss lines. The first signal line and the pair of Vss lines are extended along a first direction, and the Vss lines are arranged along a second direction. The first direction and the second direction are perpendicular to each other. The Vss lines are arranged at respective two sides of the first signal line.Type: ApplicationFiled: February 14, 2016Publication date: July 13, 2017Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
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Publication number: 20170162449Abstract: A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer.Type: ApplicationFiled: February 16, 2017Publication date: June 8, 2017Inventors: Ching-Wen Hung, Wei-Cyuan Lo, Ming-Jui Chen, Chia-Lin Lu, Jia-Rong Wu, Yi-Hui Lee, Ying-Cheng Liu, Yi-Kuan Wu, Chih-Sen Huang, Yi-Wei Chen, Tan-Ya Yin, Chia-Wei Huang, Shu-Ru Wang, Yung-Feng Cheng
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Patent number: 9613969Abstract: The present invention provides a semiconductor structure, including a substrate, a plurality of fin structures, a plurality of gate structures, a dielectric layer and a plurality of contact plugs. The substrate has a memory region. The fin structures are disposed on the substrate in the memory region, each of which stretches along a first direction. The gate structures are disposed on the fin structures, each of which stretches along a second direction. The dielectric layer is disposed on the gate structures and the fin structures. The contact plugs are disposed in the dielectric layer and electrically connected to a source/drain region in the fin structure. From a top view, the contact plug has a trapezoid shape or a pentagon shape. The present invention further provides a method for forming the same.Type: GrantFiled: July 7, 2015Date of Patent: April 4, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Wei-Cyuan Lo, Ming-Jui Chen, Chia-Lin Lu, Jia-Rong Wu, Yi-Hui Lee, Ying-Cheng Liu, Yi-Kuan Wu, Chih-Sen Huang, Yi-Wei Chen, Tan-Ya Yin, Chia-Wei Huang, Shu-Ru Wang, Yung-Feng Cheng
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Publication number: 20160351575Abstract: The present invention provides a semiconductor structure, including a substrate, a plurality of fin structures, a plurality of gate structures, a dielectric layer and a plurality of contact plugs. The substrate has a memory region. The fin structures are disposed on the substrate in the memory region, each of which stretches along a first direction. The gate structures are disposed on the fin structures, each of which stretches along a second direction. The dielectric layer is disposed on the gate structures and the fin structures. The contact plugs are disposed in the dielectric layer and electrically connected to a source/drain region in the fin structure. From a top view, the contact plug has a trapezoid shape or a pentagon shape. The present invention further provides a method for forming the same.Type: ApplicationFiled: July 7, 2015Publication date: December 1, 2016Inventors: Ching-Wen Hung, Wei-Cyuan Lo, Ming-Jui Chen, Chia-Lin Lu, Jia-Rong Wu, Yi-Hui Lee, Ying-Cheng Liu, Yi-Kuan Wu, Chih-Sen Huang, Yi-Wei Chen, Tan-Ya Yin, Chia-Wei Huang, Shu-Ru Wang, Yung-Feng Cheng
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Patent number: 9379119Abstract: A static random access memory (SRAM) is disclosed. The SRAM includes a plurality of SRAM cells on a substrate, in which each of the SRAM cells further includes: a gate structure on the substrate, a plurality of fin structures disposed on the substrate, where each fin structure is arranged perpendicular to the arrangement direction of the gate structure, a first interlayer dielectric (ILD) layer around the gate structure, a first contact plug in the first ILD layer, where the first contact plug is strip-shaped and contacts two different fin structures; and a second ILD layer on the first ILD layer.Type: GrantFiled: June 24, 2015Date of Patent: June 28, 2016Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Yu-Hsiang Hung, Ssu-I Fu, Chih-Kai Hsu, Jyh-Shyang Jenq
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Patent number: 9196352Abstract: A static random access memory unit cell layout structure is disclosed, in which a slot contact is disposed on one active area and another one across from the one. A static random access memory unit cell structure and a method of fabricating the same are also disclosed, in which, a slot contact is disposed on drains of a pull-up transistor and a pull-down transistor, and a metal-zero interconnect is disposed on the slot contact and a gate line of another pull-up transistor. Accordingly, there is not an intersection of vertical and horizontal metal-zero interconnects, and there is no place suffering from twice etching. Leakage junction due to stitch recess can be avoided.Type: GrantFiled: February 25, 2013Date of Patent: November 24, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Po-Chao Tsao, Shu-Ru Wang, Chia-Wei Huang, Chieh-Te Chen, Feng-Yi Chang, Chih-Sen Huang
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Publication number: 20140241027Abstract: A static random access memory unit cell layout structure is disclosed, in which a slot contact is disposed on one active area and another one across from the one. A static random access memory unit cell structure and a method of fabricating the same are also disclosed, in which, a slot contact is disposed on drains of a pull-up transistor and a pull-down transistor, and a metal-zero interconnect is disposed on the slot contact and a gate line of another pull-up transistor. Accordingly, there is not an intersection of vertical and horizontal metal-zero interconnects, and there is no place suffering from twice etching. Leakage junction due to stitch recess can be avoided.Type: ApplicationFiled: February 25, 2013Publication date: August 28, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Wen Hung, Po-Chao Tsao, Shu-Ru Wang, Chia-Wei Huang, Chieh-Te Chen, Feng-Yi Chang, Chih-Sen Huang
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Patent number: 7687206Abstract: The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.Type: GrantFiled: March 8, 2007Date of Patent: March 30, 2010Assignee: United Microelectronics Corp.Inventors: Chuan-Hsien Fu, Chuen-Huei Yang, Chien-Li Kuo, Shu-Ru Wang, Yu-Lin Wang
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Publication number: 20080220341Abstract: The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.Type: ApplicationFiled: March 8, 2007Publication date: September 11, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chuan-Hsien Fu, Chuen-Huei Yang, Chien-Li Kuo, Shu-Ru Wang, Yu-Lin Wang