Patents by Inventor Shuang Ji
Shuang Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140252521Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate having a first side and a second side opposite the first side. The semiconductor substrate contains a radiation-sensing region configured to sense radiation projected toward the substrate from the second side. A first layer is disposed over the second side of the semiconductor substrate. The first layer has a first energy band gap. A second layer is disposed over the first layer. The second layer has a second energy band gap. A third layer is disposed over the second layer. The third layer has a third energy band gap. The second energy band gap is smaller than the first energy band gap and the third energy band gap.Type: ApplicationFiled: September 18, 2013Publication date: September 11, 2014Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Shuang-Ji Tsai, Jeng-Shyan Lin, Chun-Chieh Chuang
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Publication number: 20140231949Abstract: One or more embodiments of techniques or systems for mitigating dark current of an image sensor are provided herein. Generally, a silicon interface, such as an edge of a dielectric region or an edge between a back side interface (BSI) region and a pass region, is a source of electrons or holes which cause dark current. In some embodiments, the image sensor includes a surface protect region. For example, the surface protect region is doped with a first doping type and a photo-diode of the image sensor is doped with the same first doping type. In this manner, the surface protect region acts as an electron magnet or a hole magnet for electrons or holes from the silicon interface, thus mitigating electrons or holes from the silicon interface from being collected by the photo-diode, for example.Type: ApplicationFiled: February 18, 2013Publication date: August 21, 2014Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Feng-Chi Hung, Dun-Nian Yaung, Jen-Cheng Liu, Shu-Ting Tsai, Shuang-Ji Tsai
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Publication number: 20140199804Abstract: A method of fabricating a semiconductor device includes providing a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, forming, on the front side of the device substrate, a metal feature, forming, on the back side of the device substrate, an insulating layer, forming, on the back side of the semiconductor device, a trench exposing the metal feature, forming a bonding pad in the trench in electrical communication with the metal feature, and forming, on the insulating layer, a metal shield, in which the metal shield and the bonding pad have different thicknesses relative to each other.Type: ApplicationFiled: March 17, 2014Publication date: July 17, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Jeng-Shyan Lin, Cheng-Ying Ho
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Publication number: 20140159190Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: ApplicationFiled: February 11, 2014Publication date: June 12, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Patent number: 8736006Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and so-fabricated image sensor, in which undesired neutralization of charges in BARC layers caused by opposite charges in metal shield grounds is prevented to reduce dark current and enhance device performance. The image sensor comprises a substrate having a plurality of radiation sensors formed adjacent its front surface, a first insulation layer formed over the back surface of the substrate, a BARC layer formed over the first insulation layer, a metal grid disposed over the BARC layer, one or more metal grounds extending from the metal ground into the substrate for grounding purpose, and a sidewall insulating layer disposed between the sidewall of each metal ground and the surrounding BARC layer. The sidewall insulating layer electrically insulates the metal grounds from the surrounding BARC layer.Type: GrantFiled: March 14, 2013Date of Patent: May 27, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Jeng-Shyan Lin, Chun-Chieh Chuang, Min-Feng Kao
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Patent number: 8709854Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: GrantFiled: September 14, 2012Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Patent number: 8710612Abstract: A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other.Type: GrantFiled: May 20, 2011Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Jeng-Shyan Lin, Cheng-Ying Ho
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Publication number: 20140090307Abstract: A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a superabrasive crystal having an irregular surface. The superabrasive material further comprises a plurality of structure defects within the superabrasive crystal. The plurality of structure defects may cause micro-chipping when used as grinding materials.Type: ApplicationFiled: September 16, 2013Publication date: April 3, 2014Applicant: DIAMOND INNOVATIONS, INC.Inventors: Shuang Ji, Christopher Long, Susanne Sowers, Kai Zhang
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Publication number: 20140077320Abstract: A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.Type: ApplicationFiled: September 14, 2012Publication date: March 20, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: U-Ting Chen, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Jeng-Shyan Lin, Shuang-Ji Tsai
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Patent number: 8664736Abstract: A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.Type: GrantFiled: May 20, 2011Date of Patent: March 4, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang, Yueh-Chiou Lin
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Publication number: 20140048658Abstract: A back frame module includes a base plate, two locking plate members, a cable organizing plate, and a stowage plate. The base plate is adapted to be provided on a rear face of a display. The locking plate members, the cable organizing plate, and the stowage plate are selectively connected to the base plate. The locking plate members are adapted for mounting of a computer device therebetween. The cable organizing plate is adapted to stow a cable of the display or of the computer device. The stowage plate is adapted to stow an adapter of the display or other accessories. The locking plate members, the cable organizing plate, and the stowage plate can be selectively substituted by a support plate. The back frame module thus has various states of use to satisfy different user requirements.Type: ApplicationFiled: August 1, 2013Publication date: February 20, 2014Applicant: Aopen Inc.Inventors: Chih-Hsiung Chen, Yao-Wen Hsu, Shuang-Ji Jiang, Hong-Chang Liu, Wen-Hsi Tsai
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Patent number: 8628990Abstract: A photodetector is formed in a front surface of a substrate. The substrate is thinned from a back surface of the substrate. A plurality of dopants is introduced into the thinned substrate from the back surface. The plurality of dopants in the thinned substrate is annealed. An anti-reflective layer is deposited over the back surface of the thinned substrate. A micro lens is formed over the anti-reflective layer. At least one ultraviolet (UV) radiation treatment is performed after at least one of the preceding steps.Type: GrantFiled: September 27, 2012Date of Patent: January 14, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ta Wu, Sheng-Chieh Chiao, Yeur-Luen Tu, Chia-Shiung Tsai, Shuang-Ji Tsai
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Publication number: 20130307104Abstract: A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.Type: ApplicationFiled: May 21, 2012Publication date: November 21, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Jeng-Shyan Lin, Wen-De Wang
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Publication number: 20130307107Abstract: A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.Type: ApplicationFiled: August 22, 2012Publication date: November 21, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Feng-Chi Hung
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Publication number: 20130299886Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.Type: ApplicationFiled: September 14, 2012Publication date: November 14, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20130299931Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.Type: ApplicationFiled: August 28, 2012Publication date: November 14, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
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Publication number: 20130285179Abstract: A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.Type: ApplicationFiled: April 26, 2012Publication date: October 31, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Shuang-Ji Tsai
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Publication number: 20130285181Abstract: A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.Type: ApplicationFiled: April 27, 2012Publication date: October 31, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Shuang-Ji Tsai, Min-Feng Kao
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Patent number: 8523132Abstract: A back frame module includes a base plate, two locking plate members, a cable organizing plate, and a stowage plate. The base plate is adapted to be provided on a rear face of a display. The locking plate members, the cable organizing plate, and the stowage plate are selectively connected to the base plate. The locking plate members are adapted for mounting of a computer device therebetween. The cable organizing plate is adapted to stow a cable of the display or of the computer device. The stowage plate is adapted to stow an adapter of the display or other accessories. The locking plate members, the cable organizing plate, and the stowage plate can be selectively substituted by a support plate. The back frame module thus has various states of use to satisfy different user requirements.Type: GrantFiled: June 4, 2012Date of Patent: September 3, 2013Assignee: Aopen Inc.Inventors: Chih-Hsiung Chen, Yao-Wen Hsu, Shuang-Ji Jiang, Hong-Chang Liu, Wen-Hsi Tsai
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Patent number: 8435824Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa.Type: GrantFiled: July 7, 2011Date of Patent: May 7, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuang-Ji Tsai, Dun-Nian Yaung, Jeng-Shyan Lin, Jen-Cheng Liu, Wen-De Wang, Yueh-Chiou Lin