Patents by Inventor Shuhei Mitani

Shuhei Mitani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190273158
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
    Type: Application
    Filed: May 21, 2019
    Publication date: September 5, 2019
    Inventors: Shuhei MITANI, Yuki NAKANO, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI, Takashi KIRINO
  • Patent number: 10319853
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: June 11, 2019
    Assignee: ROHM CO., LTD.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Publication number: 20190168893
    Abstract: A reaction wheel apparatus including a reaction wheel provided in a polyhedral housing, in which respective faces constituting a polyhedron are constituted by frame parts corresponding to the respective faces constituting the polyhedron, and at least two of the frame parts are constituted by at least two rigid circuit board parts of a rigid flexible substrate.
    Type: Application
    Filed: July 24, 2017
    Publication date: June 6, 2019
    Applicant: Japan Aerospace Exploration Agency
    Inventors: Shinji MITANI, Shuhei SHIGETO
  • Publication number: 20190145021
    Abstract: An epitaxial substrate includes a single-crystal substrate of silicon carbide, and an epitaxial layer of silicon carbide disposed on the single-crystal substrate. The epitaxial layer includes a first epitaxial layer disposed on the single-crystal substrate, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed on the second epitaxial layer. The first epitaxial layer has a basal-plane-dislocation conversion rate of less than 95%. The second epitaxial layer has a basal-plane-dislocation conversion rate of more than 98%.
    Type: Application
    Filed: May 9, 2017
    Publication date: May 16, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Takanori TANAKA, Shigehisa YAMAMOTO, Yu NAKAMURA, Yasuhiro KIMURA, Shuhei NAKATA, Yoichiro MITANI
  • Patent number: 10141411
    Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: November 27, 2018
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Atsushi Onogi, Toru Onishi, Shuhei Mitani, Yusuke Yamashita, Katsuhiro Kutsuki
  • Publication number: 20180138313
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
    Type: Application
    Filed: January 11, 2018
    Publication date: May 17, 2018
    Applicant: ROHM CO., LTD.
    Inventors: Shuhei MITANI, Yuki NAKANO, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI, Takashi KIRINO
  • Patent number: 9893180
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: February 13, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Publication number: 20170271457
    Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.
    Type: Application
    Filed: February 17, 2017
    Publication date: September 21, 2017
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Atsushi ONOGI, Toru ONISHI, Shuhei MITANI, Yusuke YAMASHITA, Katsuhiro KUTSUKI
  • Publication number: 20170012123
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Applicant: ROHM CO., LTD.
    Inventors: Shuhei MITANI, Yuki NAKANO, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI, Takashi KIRINO
  • Patent number: 9496393
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: November 15, 2016
    Assignee: ROHM CO., LTD.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Patent number: 9397185
    Abstract: A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vth can be suppressed.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: July 19, 2016
    Assignee: ROHM CO., LTD.
    Inventors: Heiji Watanabe, Takuji Hosoi, Takayoshi Shimura, Ryota Nakamura, Yuki Nakano, Shuhei Mitani, Takashi Nakamura, Hirokazu Asahara
  • Patent number: 9368351
    Abstract: [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. [Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial layer 3. In the MIS structure, an area density QM of positive mobile ions in the gate insulating film 9 is made no more than 1×1012 cm?2.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: June 14, 2016
    Assignee: ROHM CO., LTD.
    Inventors: Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Shuhei Mitani, Yuki Nakano, Ryota Nakamura, Takashi Nakamura
  • Publication number: 20160133743
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Application
    Filed: January 14, 2016
    Publication date: May 12, 2016
    Applicant: ROHM CO., LTD.
    Inventors: Shuhei MITANI, Yuki NAKANO, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI, Takashi KIRINO
  • Patent number: 9257521
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: February 9, 2016
    Assignee: ROHM CO., LTD.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Publication number: 20150318372
    Abstract: A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vth can be suppressed.
    Type: Application
    Filed: December 2, 2013
    Publication date: November 5, 2015
    Inventors: Heiji WATANABE, Takuji HOSOI, Takayoshi SHIMURA, Ryota NAKAMURA, Yuki NAKANO, Shuhei MITANI, Takashi NAKAMURA, Hirokazu ASAHARA
  • Patent number: 9159846
    Abstract: A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: October 13, 2015
    Assignee: ROHM CO., LTD.
    Inventors: Shuhei Mitani, Masatoshi Aketa
  • Patent number: 9136378
    Abstract: A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: September 15, 2015
    Assignee: ROHM CO., LTD.
    Inventors: Keiji Okumura, Mineo Miura, Katsuhisa Nagao, Shuhei Mitani
  • Publication number: 20150144967
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Application
    Filed: January 21, 2015
    Publication date: May 28, 2015
    Inventors: Shuhei MITANI, Yuki NAKANO, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI, Takashi KIRINO
  • Patent number: 8969877
    Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: March 3, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Shuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
  • Publication number: 20150034971
    Abstract: [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. [ Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial layer 3. In the MIS structure, an area density QM of positive mobile ions in the gate insulating film 9 is made no more than 1×1012 cm?2.
    Type: Application
    Filed: February 22, 2013
    Publication date: February 5, 2015
    Inventors: Heiji Watanabe, Takayoshi Sshimura, Takuji Hosoi, Shuhei Mitani, Yuki Nakano, Ryota Nakamura, Takashi Nakamura