Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Abstract: A technique includes a gas supplier including a first pipe into which a gas is introduced and a second pipe including an opening from which the gas is released, in which a flow path cross-sectional area of the second pipe is larger than a flow path cross-sectional area of the first pipe, and a direction in which the gas is released from the opening is inclined with respect to a direction from a center of the first pipe toward a center of the second pipe in a plan view.

Abstract: According to the present disclosure, there is provided a technique capable of preventing a substrate from being warped or cracked due to a heat treatment process. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber in which a plurality of substrates accommodated in a substrate retainer are processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier configured to supply a cooling gas is supplied to between adjacent substrates among the plurality of substrates via a plurality of gas supply ports provided so as to correspond to an interval of the plurality of substrates accommodated in the substrate retainer.

Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

Abstract: A substrate processing apparatus for preventing adhesion of by-products to an inner surface of a furnace opening is disclosed. An apparatus is provided with: a process chamber, a substrate holder, a process gas supplier that supplies a process gas into the process chamber, a first heater that is installed outside the process chamber and heats an inside of the process chamber, a heat insulator that is installed between a lid of the process chamber and the substrate holder, a second heater that is installed near the substrate holder in the heat insulator and heats the inside of the process chamber, a third heater that is installed near an end closer to the lid in the process chamber and heats the end, and a supplier that supplies a purge gas to purge around the second and third heaters into the heat insulator.

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Abstract: Described herein is a technique capable of uniformly processing a substrate. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a microwave generator configured to supply a microwave to the process chamber to perform a heat treatment on the substrate; a substrate retainer configured to accommodate the substrate and a heat retainer provided above the substrate and retaining a temperature of the substrate heated by the microwave; and a first ring plate provided on an outer circumference of the heat retainer and whose outer diameter is greater than that of the substrate.

Abstract: Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: Described herein is a technique capable of suppressing adhesion of by-products to a furnace opening portion. A substrate processing apparatus includes: a reaction vessel having an opening at a lower end and accommodating a substrate retainer; a shaft rotatably supporting the substrate retainer; a cap including: a side surface portion having a predetermined gap with an inner surface of the reaction vessel; a cylindrical portion through which the shaft is inserted; an upper plate portion of an annular shape; and a flange connected to a lower end of the side surface portion; and a cap cover connected to the shaft above the upper end of the cylindrical portion. A purge gas from thereunder flows sequentially to a space between the shaft and the cylindrical portion, a space between the upper plate portion and the cap cover and a space between the side surface portion and the cap cover.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.

Abstract: There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.