Abstract: A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe. The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

Abstract: A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

Abstract: A high-temperature superconducting thin film of compound oxide selected from the group consisting of:Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy,Ba.sub.2 Cu.sub.3 O.sub.7-x,Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,(La, Sr).sub.2 CuO.sub.4-x,which is deposited on a substrate of sapphire, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.

Abstract: A process for manufacturing a superconducting elongated article such as a superconducting wire which is applicable for manufacturing a superconducting coil or the like. The process includes steps comprising filling a metal pipe with material powder of ceramic consisting of compound oxide having superconductivity, performing plastic deformation of the metal pipe filled with the ceramic metal powder to reduce the cross section of the metal pipe, and then subjecting the deformed metal pipe to heat-treatment to sinter the ceramic material powder filled in the metal pipe. The ceramic material powder may contain compound oxide having Perovskite-type crystal structure exhibiting superconductivity.The metal pipe may selected from a group comprising metals of Ag, Au, Pt, Pd, Rh, Ir, Ru, Os, Cu, Al, Fe, Ni, Cr, Ti, Mo, W and Ta and alloys including these metals as the base. The heat-treatment may be carried out at a temperature ranging from 700 to 1,000.degree. C.

Abstract: A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).

Abstract: A high-temperature superconducting thin film of compound oxide selected from the group consisting of:Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x,(La, Sr).sub.2 CuO.sub.4-x,which is deposited on a substrate of MgO or SrTiO.sub.3, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.

Abstract: A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of copper-containing oxide is interposed between the substrate and the superconducting thin film.

Abstract: There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.

Abstract: A continuous method for manufacturing an elongated superconducting campsite composed of a superconductor consisting of compound oxided and a metal sheath surrounding the superconductor, including the steps of kneading a material powder of superconducting compound oxide with a binder, continuously shaping the resulting kneaded paste into an elongated pre-form by an extruder or by coating technlque, heating the pre-form continuously to remove said binder, wrapping the pre-form with a metallic sheet, and then subjecting the pre-form from wrapped with the metallic sheet to sintering operation to sinter said material powder.

Abstract: Superconducting composite comprising a matrix made of superconducting sintered mass composed of perovskite type or quasi-perovskite type oxide and metal phase dispersed in the superconducting mass with a proportion of from 10 to 70 volume % with respect to said composite. The metal phase may consist of at least one of Cu, Ag, Au, Pt, Ni and Zn or their alloys. The superconducting sintered mass may be Ba-Y-Cu-O type compound oxide.

Abstract: There is disclosed a device for forming a thin film on a substrate by irradiating a target of a compound oxide superconducting material with a laser beam and evaporating on the substrate a thin film corresponding to a composition of the target in an oxygen ambient atmosphere by laser evaporation, a scanning optical system for causing the laser beam to scan being disposed in an optical path of the laser beam.

Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of amorphous inorganic material such as inorganic glass, amorphous oxide.

Abstract: A process for producing a composite oxide superconducting wire is disclosed, which comprises the steps of compacting material powder for an oxide superconductor in a noble metal pipe; heating the metal pipe filled with the material powder at a temperature ranging between an upper limit corresponding to the lowest melting point of any one of constituent components in the material powder and a lower limit which is lower by 100.degree. C. than said upper limit to sinter the material powder and cooling the product at a cooling velocity of less than 50.degree. C./min, and further including a series of wire-drawing, annealing and sintering steps. Furthermore, an intermediate layer of noble metal can be interposed between the oxide superconductor and the metal pipe.

Abstract: A method for forming an oxide superconductor thin film having different thickness portions, in a process for manufacturing a superconductor device, includes the step of forming an oxide superconductor thin film having a uniform thickness on a substrates. A portion of the oxide superconductor thin film is etch-removed so that the oxide superconductor thin film has a thin thickness portion. Preferably, before the etching, the oxide superconductor thin film is coated with a metal layer, and the oxide superconductor thin film and the metal layer are etched together by means of a physical dry etching process.

Abstract: A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.

Abstract: A superconducting thin film of a compound oxide represented by YBa.sub.2 Cu.sub.3 O.sub.y in which "y" is a number of 6<y<8 and deposited on a substrate, characterized in that a buffer layer of a compound oxide represented by Y.sub.2 BaCuO.sub.x in which "x" is a number of 4<x<6 is interposed between the superconducting thin film and the substrate.

Abstract: A process for preparing a thin film of superconducting material is disclosed in which films are deposited from a defined target. The thin films prepared by the process are characterized by high critical temperature of superconductivity and a smaller discrepancy between the critical temperature and the onset temperature at which superconductivity is observed.

Abstract: In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is excited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporarily after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before the next film-forming operation is restarted.

Abstract: A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe.The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

Abstract: A process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, Ca).sub.x (.alpha., Dy).sub.1-x Tl.sub.y Cu.sub.1-y O.sub.3-zwherein ".alpha." represents Y or La; the atomic ratio of Ca to Ba is between 1% and 90%; the atomic ratio of Dy to .alpha. is between 1% and 90%; x, y and z are within the ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively; and the expression of (Ba, Ca) and (.alpha., Dy) means that the respective elements occupy predetermined sites in a crystal in a predetermined proportion. The process comprises preparing a material powder, compacting the material powder and then subjecting the resulting compact to a final sintering operation and is characterized in that the material powder is(A) a powder mixture composed of powders selected from a group comprising (i) powders of elemental Ba, Cu, Ca, .alpha., Dy and Tl and (ii) powders of compounds each containing at least one of said elements Ba, Cu, Ca, .