Abstract: A process for preparing a superconducting thin film composed of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as SrTiO.sub.3. Improvement is in that a heat-treatment of the deposited thin film is carried out in a same chamber in which the thin film of compound oxide is deposited on the substrate without taking the substrate out of said chamber.

Abstract: A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.

Abstract: Superconducting material of oxide which have a composition represented by the general formula:{.alpha..sub.1-x (.beta..sub.1-w .gamma..sub.w).sub.x }.delta..sub.y .epsilon..sub.zparticularly, {Ba.sub.1-x (Y.sub.1-w .gamma..sub.w).sub.x }Cu.sub.y O.sub.z in which, ".gamma." represents at least one element selected from a group consisting of titanium (Ti), hafnium (Hf), silicon (Si), germanium (Ge), tin (Sn), lead (Pb) and manganese (Mn), and "X", "Y" "W" and "Z" represent numbers which are selected in the following ranges: 0.1.ltoreq.X.ltoreq.0.9, 0.4.ltoreq.y.ltoreq.1.0, 1.ltoreq.z.ltoreq.5 and 0.01.ltoreq.w.ltoreq.0.50 and which have crystal structures of perovskite type or quasiperovskite type.

Abstract: A composite tool with a higher bonding strength and higher heat resistance is provided comprising an insert of a hard material such as composite diamond or BN compacts and a support of a hard metal or alloy such as steel and cemented carbides, having a larger volume than the insert, the insert and support being bonded by friction welding through an interlayer of a high strength metal or alloy such as Co and Ni with a thickness of at most 1 mm.

Abstract: A novel process for preparing superconductor of bismuth-containing compound oxide such as Bi--Sr--Ca--Cu system.In the present invention, firstly an intermediate compound oxide containing metal elements of the superconductor except bismuth is prepared and then the intermediate compound oxide is contacted with bismuth oxide vapour at a temperature between 750.degree. and 950.degree. C. so that bismuth oxide is reacted with said intermediate compound oxide.

Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of polymer compound such as polyimide, silicon resin or epoxy resin.

Abstract: A process for producing a superconducting article having a layer of compound oxide of quasi-perovskite type oxide crystal structure by electrodeposition technique. The process is characterized by dispersing a material powder in a liquid containing a carrier, driving ionized material particles towards a substrate by applying a direct current between a substrate and a counter electrode, and then sintering a thin layer of powders deposited on the substrate to convert the deposited powders to a superconducting compound oxide.

Abstract: A method for preparing a thin film of a composite copper oxide superconductor with a deposition source of the compound copper oxide, by applying an oxygen ion beam from an ion source onto a substrate while changing beam intensity during formation of the superconducting thin film, thereby to physically deposit evaporative particles from the deposition source on the substrate.

Abstract: The invention is an after-treatment of a compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment by oxygen plasma is performed while the material is heated at 500.degree. to 1,000.degree. C.The material may have a form of bulky mass or a form of a thin film deposited on a substrate by physical vapor deposition technique.

Abstract: A composite tool with a higher bonding strength and higher heat resistance is provided comprising an insert of a hard material such as composite diamond or BN compacts and a support of a hard metal or alloy such as steel and cemented carbides, having a larger volume than the insert, the insert and support being bonded by friction welding through an interlayer of a high strength metal or alloy such as Co and Ni with a thickness of at most 1 mm.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.)x(.alpha.,.beta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Ba, an atomic ratio of .gamma. to Ba being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of IIIa group of the periodic but is different from .alpha., an atomic ratio of .beta. to .alpha. is selected in a range between 1% and 90%,".epsilon." represents a metal element of IIIb group of the periodic table,x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively, andthe expression of (Ba, .gamma.) and (.alpha.,.beta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of:rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position,at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, andat the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a

Abstract: A sintered compact of cubic boron nitride is made by adsorbing and/or diffusing 0.005 to 1.000 percent by weight of water into a boron nitride compact containing alkaline earth metal boron nitride as a catalyst. The so prepared compact is then subjected to a treatment under high pressure at a relatively low temperature to form a dense cubic boron nitride sintered compact of high purity.

Abstract: Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.

Abstract: A composite compact component made of a composite compact consisting of a diamond or BN powder bonded to a hard sintered alloy base during a sintering operation, and a substrate composed of steel or a hard sintered alloy bonded to the base of the composite compact through a high strength filler metal or alloy having a melting point of at least the liquidus point of the hard sintered alloy base. A process of making set composite compact component is also disclosed as well as a drill bit containing said composite compact component and variations thereof.

Abstract: A diamond sintered body for tools contains a diamond content in excess of 93 percent and not more than 99 percent by volume and a residue including at least one of a metal or a carbide selected from groups IVa, Va and VIa of the periodic table and an iron group metal of 0.1 to 3 percent by volume in total and pores at least 0.5 percent and not more than 7 percent by volume.

Abstract: A diamond synthesizing method carried out under diamond-stable superhigh pressure and temperature by employing a synthesizing vessel (10) having a plurality of synthesizing chambers (10a, 10b) divided by a partition layer (16) in the vertical direction. Solvent metals (13a, 13b) respectively placed in the upwardly arranged synthesizing chamber (10a) and the downwardly arranged synthesizing chamber (10b) are prepared so that the solvent metals are different in eutectic temperature with carbon from each other. In the respective synthesizing chambers (10a, 10b), carbon sources (12a, 12b) are placed in contact with highest-temperature portions of the respective solvent metals (13a, 13b) and seed crystals (11a, 11b) are placed in contact with lowest-temperature portions thereof. The synthesizing vessel (10) is provided with a temperature gradient in such directivity that the upper part thereof is at a higher temperature and the lower part is at a lower temperature.

Abstract: A synthetic diamond heat sink which can be easily shaped and which ensures a consistently high thermal conductivity in which the diamond is a Type Ib diamond containing 50 to 100 ppm nitrogen. The synthetic diamond crystal has a shape similar to the crystal structure of a hexahedron synthesized by heating a carbon source, a solvent and a diamond seed crystal and the stability region of diamond at a high pressure. The resulting temperature gradient between the carbon source and seed crystal is adjusted to cause diamond growth on the seed crystal. The solvent employed is selected from the group of cobalt, nickel, iron, chromium and manganese. The diamond crystal is caused to grow as the temperature of the solvent is gradually decreased at a rate of 0.15 to 10.degree. C. per hour so that the temperature of the seed crystal and growning diamond crystal is within a range the lower limit of which is a temperature 20.degree. C.

Abstract: The present invention relates to a hard diamond sintered body for use in tools such as cutting tools, excavating tools and wire drawing dies and a method for producing the same. A sintered body obtained by sintering fine powders of diamond under a superhigh pressure has been already used in cutting tools, drill bits, wire drawing dies and the like of nonferrous metals and similars. However, they have said that such a diamond sintered body is inferior in heat-resistance. The present invention was achieved from the investigation aiming at the elimination of the above described defect of being inferior in heat-resistance of the conventional diamond sintered body. That is to say, according to the present invention, synthetic diamond powders containing a diamond synthesizing catalyst consisting of VIII group ferrous metals of the periodic table or Cr, Mn or Ta or alloys containing them used in the synthesis of diamond at a ratio of 0.

Abstract: An improved diamond compact of the present invention comprises 20 to 85% by volume of diamond grains with a grain size of at least 3 .mu.m and the balance of a binder consisting of 20 to 95% by volume of ultra-fine diamond grains with a grain size of at most 1 .mu.m, at least one member with a grain size of at most 1 .mu.m, selected from the group consisting of carbides, carbonitrides, nitrides, borides of Group 4a, 5a and 6a elements of Periodic Table, solid solutions thereof and mixed crystals thereof and at least one member selected from the group consisting of iron group metals.