Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.

Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.

Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.

Abstract: The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier.

Abstract: Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.

Abstract: The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give polished rigid disk.

Abstract: Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.

Abstract: The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: A polishing composition comprising a dispersion of silane-modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

Abstract: Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.

Abstract: Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitrites, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and (iv) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith.

Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.