Abstract: A computer device, a setting method for a memory module, and a mainboard are provided. The computer device includes a memory module, a processor, and the mainboard. A basic input output system (BIOS) of the mainboard stores a custom extreme memory profile (XMP). When the processor executes the BIOS, so that the computer device displays a user interface (UI), the BIOS displays multiple default XMPs stored in the memory module and the custom XMP through the UI. The BIOS stores one of the default XMPs and the custom XMP to the memory module according to a selecting result of the one of the default XMPs and the custom XMP displayed on the UI.

Abstract: A three-dimensional printing apparatus includes a liquid tank capable of accommodating a photosensitive liquid. The liquid tank includes a film, a plurality of side walls, a plate and a motor. The film has a workpiece curing area. The plurality of side walls surrounds the film. The plate is capable of supporting the film and having at least one fluid tunnel extending from a first surface of the plate contacting the film to a second surface of the plate. The motor is connected to the liquid tank to incline the liquid tank. A gap is formed between the plat and one of the plurality of side walls of the liquid tank, and the film is communicated with an outside space via the gap.

Abstract: Provided are sustained-release pharmaceutical compositions including a ketamine pamoate salt and a pharmaceutically acceptable carrier thereof. The compositions include aqueous suspension, solution and matrix delivery system, which can provide sustained release for anesthesia, analgesia or treatment of central nervous system and anti-inflammatory diseases.

Abstract: Techniques for managing access to a physical area are provided. In one technique, first data is extracted from a digital file. Based on identification data within the first data, a database is searched. A data item in the database is identified that matches the identification data. The first data is associated with the data item. After associating the first data with the data item, code data is generated. Encoded data that encodes the code data is then generated. The encoded data is sent over a computer network to a mobile device, or an account, of a user that is associated with the data item.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.

Abstract: An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid and an alkaline solution, a rate of etching a cobalt-containing member by the etchant is greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is less than or equal to 100 ppb. A semiconductor structure, includes a plurality of epitaxial structures over a substrate, a gate structure over the substrate and between two of the plurality of epitaxial structures; a cobalt-containing member over one of the epitaxial structures and adjacent to the gate structure; and a dielectric member over the cobalt-containing member, wherein a top surface of the cobalt-containing member is formed by etching a portion of the cobalt-containing member using an etchant including a fluorine-free acid and an alkaline solution.

Abstract: A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

Abstract: A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.

Abstract: A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

Abstract: The present invention relates to a method for mitigation of non-alcoholic fatty liver disease, the method comprising administering an effective amount of a composition comprising small-molecule fucoidan and fucoxanthin to a subject in need thereof, and achieves the efficacy by means of improving the controlled attenuation parameter and blood biochemical parameters such as alanine aminotransferase (ALT), glucose ante cibum (AC) and glycated hemoglobin (HbA1c).

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: The present invention discloses a multi-account personalized artificial intelligent TV interface and system thereof for providing a user to perform software and/or hardware operations. The step (a) is to provide a single layer of work page; and step (b) is on the work page to form an account block and a content block associated with the account block; step (c) is for the user to switch the account block to display the content block corresponding to the account block; and step (d) is to execute the account block or the content block to generate a result content on the work page; and the step (e) is to create new content block or renew the account block and the content block by detecting the result content escaping from the work page. A recommendation content based on a data calculated by artificial intelligence is feedbacked to the user.

Abstract: The present invention discloses a multi-account personalized artificial intelligent TV interface and system thereof for providing a user to perform software and/or hardware operations. The step (a) is to provide a single layer of work page; and step (b) is on the work page to form an account block and a content block associated with the account block; step (c) is for the user to switch the account block to display the content block corresponding to the account block; and step (d) is to execute the account block or the content block to generate a result content on the work page; and the step (e) is to create new content block or renew the account block and the content block by detecting the result content escaping from the work page. A recommendation content based on a data calculated by artificial intelligence is feedbacked to the user.

Abstract: Disclosed herein is the use a cyanobacterial biomass for treating hepatitis B virus (HBV) infection, in particular, chronic HBV infection. According to various embodiments of the present disclosure, the cyanobacterial biomass, upon administration of at least one month, significantly reduces the level of the surface antigen of hepatitis B virus (HBsAg) detectable in the subject receiving the treatment and/or mitigates insomnia associated with chronic HBV infection.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.